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公开(公告)号：US20180174995A1
公开(公告)日：2018-06-21
申请号：US15387385
申请日：2016-12-21
IPC分类号： H01L23/00 , H01L23/498 , H01L23/528 , H01L23/532
CPC分类号： H01L24/29 , H01L23/49838 , H01L23/528 , H01L23/53228 , H01L23/53242 , H01L2224/29019
摘要： A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.
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公开(公告)号：US10546832B2
公开(公告)日：2020-01-28
申请号：US15979312
申请日：2018-05-14
IPC分类号： H01L23/00 , H01L23/498 , H01L23/532 , H01L23/528 , H01L23/10 , B81C1/00 , H05K1/11
摘要： A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.
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公开(公告)号：US10522499B2
公开(公告)日：2019-12-31
申请号：US15849383
申请日：2017-12-20
IPC分类号： H01L23/00 , H01L23/10 , H01L23/58 , H01L25/065 , H01L25/00 , B81C1/00 , H01L23/20 , H01L23/22
摘要： A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.
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公开(公告)号：US20180337157A1
公开(公告)日：2018-11-22
申请号：US15979312
申请日：2018-05-14
IPC分类号： H01L23/00 , H01L23/528 , H01L23/532 , H01L23/498
摘要： A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.
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公开(公告)号：US20210202428A1
公开(公告)日：2021-07-01
申请号：US17131588
申请日：2020-12-22
IPC分类号： H01L23/00 , H01L23/498 , H01L23/532 , H01L23/528 , H01L23/10 , B81C1/00
摘要： A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.
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公开(公告)号：US10204893B2
公开(公告)日：2019-02-12
申请号：US15159649
申请日：2016-05-19
IPC分类号： H01L25/00 , H01L21/308 , H01L25/065 , H01L21/304 , H01L21/683 , H01L21/306 , H01L23/31 , H01L21/56
摘要： In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.
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公开(公告)号：US20180226375A1
公开(公告)日：2018-08-09
申请号：US15849383
申请日：2017-12-20
IPC分类号： H01L23/00
摘要： A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.
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公开(公告)号：US20210183847A1
公开(公告)日：2021-06-17
申请号：US17131329
申请日：2020-12-22
IPC分类号： H01L25/00 , H01L23/31 , H01L21/56 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/683 , H01L25/065
摘要： In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.
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公开(公告)号：US20190189607A1
公开(公告)日：2019-06-20
申请号：US16270466
申请日：2019-02-07
IPC分类号： H01L25/00 , H01L25/065 , H01L21/683 , H01L21/308 , H01L21/56 , H01L23/31 , H01L21/304 , H01L21/306
CPC分类号： H01L25/50 , H01L21/304 , H01L21/306 , H01L21/3081 , H01L21/561 , H01L21/683 , H01L23/3121 , H01L23/3135 , H01L25/0657 , H01L2225/06513 , H01L2225/06541 , H01L2924/351
摘要： In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.
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公开(公告)号：US10002844B1
公开(公告)日：2018-06-19
申请号：US15387385
申请日：2016-12-21
IPC分类号： H01L23/10 , H01L23/522 , H01L23/00 , H01L23/498 , H01L23/528 , H01L23/532
摘要： A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.
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