公开(公告)号：US20240170369A1

公开(公告)日：2024-05-23

申请号：US18057888

申请日：2022-11-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Tsung-Sheng Kang ,  Alexander Reznicek ,  Tushar Gupta ,  Sagarika Mukesh

IPC: H01L23/48 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L23/481 ,  H01L21/76224 ,  H01L21/823871 ,  H01L21/823878 ,  H01L27/0924

Abstract: A semiconductor device is provided. The semiconductor device includes a first field effect transistor (FET) region, a second FET region and a backside signal distribution network (BSSDN). The first FET region includes a substrate, interlayer dielectric (ILD), shallow trench isolation (STI) disposed in the substrate and a contact that extends through the STI and the ILD. The second FET region includes a substrate, interlayer dielectric (ILD), shallow trench isolation (STI) disposed in the substrate and a contact that extends to the STI. The BSSDN is disposed on the ILD in the first and second regions to contact with the contact in the first FET region.

公开(公告)号：US20230282722A1

公开(公告)日：2023-09-07

申请号：US17653468

申请日：2022-03-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Julien Frougier ,  Sagarika Mukesh ,  Albert M Chu ,  Ruilong Xie ,  Andrew M. Greene ,  Eric Miller ,  Junli Wang ,  Veeraraghavan S. Basker ,  Prateek Hundekar ,  Tushar Gupta ,  Su Chen Fan

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/417 ,  H01L23/48 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/42392 ,  H01L21/823412 ,  H01L21/823418 ,  H01L23/481 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696

Abstract: A semiconductor device including a first nanodevice is located on a substrate, where the first nanodevice includes at least one channel. A first source/drain connected to the first nanodevice. A second nanodevice located on the substrate, where the second nanodevice includes at least one channel and a second source/drain connected to the second nanodevice. A first contact located above the first source/drain. A second contact located above the second source/drain. A contact cap located on top of the first contact and the second contact, where the contact cap has a first leg that extends downwards between the first contact and the second contact. The first leg of the contact cap is in contact with a first sidewall of the first contact, and a first sidewall of the second contact.