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    SEMICONDUCTOR-ON-INSULATOR DEVICE WITH ASYMMETRIC STRUCTURE
    2.
    发明申请
    SEMICONDUCTOR-ON-INSULATOR DEVICE WITH ASYMMETRIC STRUCTURE 有权
    具有不对称结构的半导体绝缘体器件

    公开(公告)号：US20140042587A1

    公开(公告)日：2014-02-13

    申请号：US14053986

    申请日：2013-10-15

    申请人： International Business Machines Corporation

    发明人： Michel J. Abou-Khalil ,  Robert J. Gauthier, JR. ,  Tom C. Lee ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

    IPC分类号： H01L27/02 ,  G06F17/50 ,  H01L27/12 ,  H01L29/861

    CPC分类号： H01L27/0255 ,  G06F17/5022 ,  G06F17/5045 ,  H01L27/0262 ,  H01L27/1203 ,  H01L29/6609 ,  H01L29/66393 ,  H01L29/7436 ,  H01L29/861

    摘要： Device structures with a reduced junction area in an SOI process, methods of making the device structures, and design structures for a lateral diode. The device structure includes one or more dielectric regions, such as STI regions, positioned in the device region and intersecting the p-n junction between an anode and cathode. The dielectric regions, which may be formed using shallow trench isolation techniques, function to reduce the width of a p-n junction with respect to the width area of the cathode at a location spaced laterally from the p-n junction and the anode. The width difference and presence of the dielectric regions creates an asymmetrical diode structure. The volume of the device region occupied by the dielectric regions is minimized to preserve the volume of the cathode and anode.

    摘要翻译： 在SOI工艺中具有减小的结面积的器件结构，制造器件结构的方法以及横向二极管的设计结构。 器件结构包括位于器件区域中并与阳极和阴极之间的p-n结相交的一个或多个电介质区域，例如STI区域。 可以使用浅沟槽隔离技术形成的电介质区域用于在p-n结和阳极侧向间隔的位置处减小p-n结相对于阴极宽度区域的宽度。 介质区域的宽度差和存在产生不对称二极管结构。 由电介质区域占据的器件区域的体积被最小化以保持阴极和阳极的体积。

    Semiconductor-on-insulator device with asymmetric structure
    5.
    发明授权
    Semiconductor-on-insulator device with asymmetric structure 有权
    具有不对称结构的绝缘体上半导体器件

    公开(公告)号：US08912625B2

    公开(公告)日：2014-12-16

    申请号：US14053986

    申请日：2013-10-15

    申请人： International Business Machines Corporation

    发明人： Michel J. Abou-Khalil ,  Robert J. Gauthier, Jr. ,  Tom C. Lee ,  Junjun Li ,  Souvick Mitra ,  Christopher S. Putnam

    IPC分类号： H01L27/02 ,  H01L27/12 ,  H01L29/861 ,  G06F17/50 ,  H01L29/74 ,  H01L29/66

    CPC分类号： H01L27/0255 ,  G06F17/5022 ,  G06F17/5045 ,  H01L27/0262 ,  H01L27/1203 ,  H01L29/6609 ,  H01L29/66393 ,  H01L29/7436 ,  H01L29/861

    摘要： Device structures with a reduced junction area in an SOI process, methods of making the device structures, and design structures for a lateral diode. The device structure includes one or more dielectric regions, such as STI regions, positioned in the device region and intersecting the p-n junction between an anode and cathode. The dielectric regions, which may be formed using shallow trench isolation techniques, function to reduce the width of a p-n junction with respect to the width area of the cathode at a location spaced laterally from the p-n junction and the anode. The width difference and presence of the dielectric regions creates an asymmetrical diode structure. The volume of the device region occupied by the dielectric regions is minimized to preserve the volume of the cathode and anode.

    摘要翻译： 在SOI工艺中具有减小的结面积的器件结构，制造器件结构的方法以及横向二极管的设计结构。 器件结构包括位于器件区域中并与阳极和阴极之间的p-n结相交的一个或多个电介质区域，例如STI区域。 可以使用浅沟槽隔离技术形成的电介质区域用于在p-n结和阳极侧向间隔的位置处减小p-n结相对于阴极宽度区域的宽度。 介质区域的宽度差和存在产生不对称二极管结构。 由电介质区域占据的器件区域的体积被最小化以保持阴极和阳极的体积。

    LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (LEDMOSFET) WITH TAPERED AIRGAP FIELD PLATES
    10.
    发明申请
    LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (LEDMOSFET) WITH TAPERED AIRGAP FIELD PLATES 有权
    横向延伸漏斗金属氧化物半导体场效应晶体管（LEDMOSFET）

    公开(公告)号：US20140225186A1

    公开(公告)日：2014-08-14

    申请号：US13762450

    申请日：2013-02-08

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Michel J. Abou-Khalil ,  Theodore J. Letavic ,  Stephen E. Luce ,  Anthony K. Stamper

    IPC分类号： H01L29/78 ,  H01L21/02

    CPC分类号： H01L29/407 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66795 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/785

    摘要： Disclosed are embodiments of a lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) having tapered dielectric field plates positioned laterally between conductive field plates and opposing sides of a drain drift region of the LEDMOSFET. Each dielectric field plate comprises, in whole or in part, an airgap. These field plates form plate capacitors that can create an essentially uniform horizontal electric field profile within the drain drift region so that the LEDMOSFET can exhibit a specific, relatively high, breakdown voltage (Vb). Tapered dielectric field plates that incorporate airgaps provide for better control over the creation of the uniform horizontal electric field profile within the drain drift region, as compared to tapered dielectric field plates without such airgaps and, thereby ensure that the LEDMOSFET exhibits the specific, relatively high, Vb desired. Also disclosed herein are embodiments of a method of forming such an LEDMOSFET.

    摘要翻译： 公开了横向扩展漏极，金属氧化物半导体场效应晶体管（LEDMOSFET）的实施例，其具有位于LEDMOSFET的漏极漂移区域的导电场板和相对侧之间横向的锥形介质场板。 每个电介质场板全部或部分包括气隙。 这些场板形成板电容器，其可以在漏极漂移区域内产生基本上均匀的水平电场分布，使得LEDMOSFET可以呈现特定的相对高的击穿电压（Vb）。 与没有这种气隙的锥形介质场板相比，掺入气隙的锥形电介质场板提供了更好地控制在漏极漂移区域内产生均匀水平电场分布的更好的控制，从而确保LEDMOSFET表现出特定的，较高的 ，Vb需要。 本文还公开了形成这种LEDMOSFET的方法的实施例。