- 专利标题: Structures, methods and applications for electrical pulse anneal processes
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申请号: US16016920申请日: 2018-06-25
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公开(公告)号: US10755949B2公开(公告)日: 2020-08-25
- 发明人: Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam , Robert R. Robison
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址: CA Ottawa
- 专利权人: ELPIS TECHNOLOGIES INC.
- 当前专利权人: ELPIS TECHNOLOGIES INC.
- 当前专利权人地址: CA Ottawa
- 代理机构: Roberts Calderon Safran & Cole, P.C.
- 代理商 Michael McCartney; Andrew M. Calderon
- 主分类号: H01L23/62
- IPC分类号: H01L23/62 ; H01L21/324 ; H01L29/866 ; H01L27/02 ; H01L29/861
摘要:
Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an cathode on a substrate and a anode on the substrate. The anode is in electrical contact with the cathode. The method further includes forming a device between the cathode and the anode. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.
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