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公开(公告)号：US11187889B2
公开(公告)日：2021-11-30
申请号：US16397549
申请日：2019-04-29
摘要： A spatial light modulator (SLM) is provided that includes an optical resonator (i.e., pixel) having nanoscale size. The optical resonator having nanoscale size includes a phase-change material such as, for example, a GeSbTe alloy, sandwiched between silicon nitride cladding layers. The phase-change material can undergo a crystalline-to-amorphous phase transition which is characterized by a large change in optical properties of the resonator.
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公开(公告)号：US10830647B2
公开(公告)日：2020-11-10
申请号：US16380046
申请日：2019-04-10
摘要： A computer-eimplemented thermal imaging device having an optically-sensitive layer that includes a superpixel having at least one pixel. The at least one pixel includes a plasmonic absorber configured to obtain radiance measurements of electromagnetic radiation emitted from an object at a plurality of wavelengths. The device further includes a processor configured to determine an emissivity and temperature for the electromagnetic radiation received at the plasmonic material from the object using the radiance measurements and to form an image of the object from the determined emissivity and temperature.
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公开(公告)号：US20200341264A1
公开(公告)日：2020-10-29
申请号：US16397549
申请日：2019-04-29
摘要： A spatial light modulator (SLM) is provided that includes an optical resonator (i.e., pixel) having nanoscale size. The optical resonator having nanoscale size includes a phase-change material such as, for example, a GeSbTe alloy, sandwiched between silicon nitride cladding layers. The phase-change material can undergo a crystalline-to-amorphous phase transition which is characterized by a large change in optical properties of the resonator.
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公开(公告)号：US10727431B2
公开(公告)日：2020-07-28
申请号：US16022969
申请日：2018-06-29
发明人： Abram L. Falk , Damon B. Farmer
摘要： A semiconductor device includes a ribbon of a thickness and a width. A material of the ribbon is configured to host excitons as well as plasmons, and the width is an inverse function of a wavector value at which an energy level of plasmons in the material substantially equals an energy level of excitons in the material. The substantially equal energies of the plasmons and the excitons in the ribbon cause an excitation of intrinsic plasmon-exciton polaritons (IPEPs) in the ribbon. A first contact electrically couples to a first location on the ribbon, and a second contact electrically couples to a second location on the ribbon.
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公开(公告)号：US10564097B2
公开(公告)日：2020-02-18
申请号：US15225339
申请日：2016-08-01
发明人： Phaedon Avouris , Damon B. Farmer , Yilei Li , Hugen Yan
IPC分类号： G01N21/552 , H01L21/04 , H01L21/56 , H01L21/02 , H01L21/31 , H01L21/027 , H01L21/311
摘要： Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
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公开(公告)号：US10481090B2
公开(公告)日：2019-11-19
申请号：US15918638
申请日：2018-03-12
发明人： Abram L. Falk , Damon B. Farmer , Shu-Jen Han
IPC分类号： G01N21/552 , G01N21/3504
摘要： Differential, plasmonic, non-dispersive infrared gas sensors are provided. In one aspect, a gas sensor includes: a plasmonic resonance detector including a differential plasmon resonator array that is resonant at different wavelengths of light; and a light source incident on the plasmonic resonance detector. The differential plasmon resonator array can include: at least one first set of plasmonic resonators interwoven with at least one second set of plasmonic resonators, wherein the at least one first set of plasmonic resonators is configured to be resonant with light at a first wavelength, and wherein the at least one second set of plasmonic resonators is configured to be resonant with light at a second wavelength. A method for analyzing a target gas and a method for forming a plasmonic resonance detector are also provided.
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公开(公告)号：US20190006468A1
公开(公告)日：2019-01-03
申请号：US16100422
申请日：2018-08-10
CPC分类号： H01L29/66015 , B32B9/007 , H01L21/02444 , H01L21/02458 , H01L21/02485 , H01L21/02499 , H01L29/1606 , H01L29/66022 , H01L29/78
摘要： A method of restricting diffusion of miscible materials across a barrier, including, forming a 2-dimensional material on a substrate surface, wherein the 2-dimensional material includes one or more defects through which a portion of the substrate surface is exposed, forming a plug selectively on the exposed substrate surface, and forming a cover layer on the plug and 2-dimensional material, wherein the cover layer material is miscible in the substrate material.
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公开(公告)号：US20170279052A1
公开(公告)日：2017-09-28
申请号：US15077025
申请日：2016-03-22
发明人： Abram L. Falk , Damon B. Farmer , Shu-Jen Han
CPC分类号： H01L51/0048 , C01B32/168 , C01B32/17 , C01B32/176 , C01B2202/08 , C01B2202/22 , H01L27/305 , H01L51/0003 , H01L51/0021 , H01L51/0025 , H01L51/441 , H01L2251/301
摘要： Detectors and methods of forming the same include aligning a semiconducting carbon nanotubes on a substrate in parallel to form a nanotube layer. The aligned semiconducting carbon nanotubes in the nanotube layer are cut to a uniform length corresponding to a detection frequency. Metal contacts are formed at opposite ends of the nanotube layer.
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公开(公告)号：US09620622B2
公开(公告)日：2017-04-11
申请号：US15189579
申请日：2016-06-22
IPC分类号： H01L21/768 , H01L21/311 , H01L21/3105 , H01L29/66 , H01L29/78 , H01L21/02 , H01L21/28 , H01L21/3213 , H01L29/40 , H01L29/417 , H01L29/51
CPC分类号： H01L29/66545 , H01L21/02172 , H01L21/0226 , H01L21/28247 , H01L21/31051 , H01L21/31133 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/32136 , H01L21/76802 , H01L21/76829 , H01L21/76834 , H01L21/76897 , H01L29/401 , H01L29/41775 , H01L29/517 , H01L29/66795 , H01L29/78
摘要： A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.
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公开(公告)号：US09470632B2
公开(公告)日：2016-10-18
申请号：US14445759
申请日：2014-07-29
发明人： Damon B. Farmer
IPC分类号： G01N21/55 , G01N21/552
CPC分类号： G01N21/553
摘要： Embodiments are directed to a plasmonic structure having an enhanced resonance frequency bandwidth. In one aspect, a plasmon-enhanced coupler is provided having a first plasmon region and a second plasmon region. A resonance frequency bandwidth of the plasmon-enhanced coupler is a hybridization of at least one first resonance frequency of the first plasmon region, and at least one second resonance frequency of the second plasmon region. The first plasmon region may be implemented as a single layer of graphene conductive material, and the second plasmon region may be implemented as multiple layers of graphene conductive material. The resonance frequency bandwidth may be chosen to overlap a frequency that comprises a vibration frequency of certain molecules of interest. Radiation directed to the plasmon-enhanced coupler causes its plasmons to interact with the molecules of interest, thereby altering the radiation.
摘要翻译： 实施例涉及具有增强的共振频率带宽的等离子体激元结构。 一方面，提供具有第一等离子体激元区域和第二等离子体区域的等离子体增强耦合器。 等离子体增强耦合器的共振频率带宽是第一等离子体激元区域的至少一个第一谐振频率和第二等离子体激元区域的至少一个第二共振频率的杂交。 第一等离子体激元区域可以被实现为单层石墨烯导电材料，并且第二等离子体激元区域可以被实现为多层石墨烯导电材料。 谐振频率带宽可以被选择为与包括某些感兴趣分子的振动频率的频率重叠。 针对等离子体增强成色剂的辐射导致其等离子体激元与感兴趣的分子相互作用，从而改变辐射。
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