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公开(公告)号：US11289594B2
公开(公告)日：2022-03-29
申请号：US16635323
申请日：2019-03-14
Inventor： Sen Huang , Xinhua Wang , Xinyu Liu , Yuankun Wang , Haibo Yin , Ke Wei
IPC: H01L29/778 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/66
Abstract: A GaN-based superjunction vertical power transistor and a manufacturing method thereof. The transistor includes: a N−-GaN layer; a first P-GaN layer as a current blocking layer, formed on the N−-GaN layer and having a gate region window; and a thin barrier Al(In, Ga)N/GaN heterostructure conformally formed on the current blocking layer and filling the bottom and one or more sidewalls of the gate region window, wherein the N−-GaN layer has an etched groove completely or partially filled with a second P-type GaN layer, an N+-GaN layer is formed under the second P-type GaN layer, and the N+-GaN layer is in direct contact with the second P-type GaN layer and the N−-GaN layer to form a superjunction composite structure.
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公开(公告)号：US10749021B2
公开(公告)日：2020-08-18
申请号：US15333674
申请日：2016-10-25
Inventor： Sen Huang , Xinyu Liu , Xinhua Wang , Ke Wei
Abstract: A GaN-based enhancement-mode power electronic device and a method for manufacturing the same. The GaN-based enhancement-mode power electronic device comprises: a substrate; a thin barrier Al(In,Ga)N/GaN heterostructure formed on the substrate; a gate, a source, and a drain formed on the thin barrier Al(In,Ga)N/GaN heterostructure. An AlN or SiNx passivation layer is formed on access regions between the gate and the source and between the gate and the drain, respectively, such that two dimensional electron gas is recovered in channels of the thin barrier Al(In,Ga)N/GaN heterostructure below the MN passivation layer by utilizing the MN passivation layer having polarization characteristics, or by using the SiNx passivation layer with positive fixed bulk/interface charges, so as to reduce on-resistance of the device and inhibit high-voltage current collapse in the device.
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公开(公告)号：US10062775B2
公开(公告)日：2018-08-28
申请号：US15368098
申请日：2016-12-02
Inventor： Sen Huang , Xinyu Liu , Xinhua Wang , Ke Wei , Qilong Bao , Wenwu Wang , Chao Zhao
IPC: H01L21/00 , H01L29/00 , H01L29/778 , H01L29/66 , H01L29/205 , H01L29/20 , H01L29/15 , H01L21/306
CPC classification number: H01L29/7786 , H01L21/30621 , H01L29/1066 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/432 , H01L29/66462
Abstract: A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.
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公开(公告)号：US10276366B2
公开(公告)日：2019-04-30
申请号：US14821203
申请日：2015-08-07
Inventor： Xinyu Liu , Sen Huang , Xinhua Wang , Ke Wei , Wenwu Wang , Junfeng Li , Chao Zhao
Abstract: A method for manufacturing a low interface state device includes performing a remote plasma surface process on a III-Nitride layer on a substrate; transferring the processed substrate to a deposition cavity via an oxygen-free transferring system; and depositing on the processed substrate in the deposition cavity. The deposition may be low pressure chemical vapor deposition (LPCVD). The interface state between a surface dielectric and III-Nitride material may be significantly decreased by integrating a low impairment remote plasma surface process and LPCVD.
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5.发明授权公开(公告)号：US10763105B2
公开(公告)日：2020-09-01
申请号：US16234303
申请日：2018-12-27
Inventor： Xinyu Liu , Yidan Tang , Shengkai Wang , Yun Bai , Chengyue Yang
Abstract: A method of manufacturing a grooved-gate MOSFET device based on a two-step microwave plasma oxidation, including: etching a grooved gate, and oxidizing silicon carbide on a surface of the grooved gate to silicon dioxide by microwave plasma to form a grooved-gate oxide layer, the step of forming the grooved-gate oxide layer including: placing a silicon carbide substrate subjected to the grooved gate etching in a microwave plasma generating device; introducing a first oxygen-containing gas, heating generated oxygen plasma to a first temperature at a first heating rate, and performing low-temperature plasma oxidation at the first temperature and a first pressure; heating the oxygen plasma to a second temperature at a second heating rate, introducing a second oxygen-containing gas, and performing high-temperature plasma oxidation at the second temperature and a second pressure until a predetermined thickness of silicon dioxide is formed; stopping introduction of the oxygen-containing gas, and completing the reaction.
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Patent Agency Ranking
公开(公告)号：US20160268124A1
公开(公告)日：2016-09-15
申请号：US14821203
申请日：2015-08-07
Inventor： Xinyu Liu , Sen Huang , Xinhua Wang , Ke Wei , Wenwu Wang , Junfeng Li , Chao Zhao
CPC classification number: H01L21/02271 , C23C16/0245 , C23C16/303 , H01L21/02164 , H01L21/02315 , H01L21/0254 , H01L21/02664
Abstract: A method for manufacturing a low interface state device includes performing a remote plasma surface process on a III-Nitride layer on a substrate; transferring the processed substrate to a deposition cavity via an oxygen-free transferring system; and depositing on the processed substrate in the deposition cavity. The deposition may be low pressure chemical vapor deposition (LPCVD). The interface state between a surface dielectric and III-Nitride material may be significantly decreased by integrating a low impairment remote plasma surface process and LPCVD.
Abstract translation: 低接口状态器件的制造方法包括在基板上的III-氮化物层上进行远程等离子体表面处理; 通过无氧转移系统将经处理的基底转移至沉积腔; 并沉积在沉积腔中的处理过的衬底上。 沉积可以是低压化学气相沉积（LPCVD）。 通过集成低损伤远程等离子体表面工艺和LPCVD，可以显着降低表面电介质和III-氮化物材料之间的界面状态。
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公开(公告)号：US11508809B2
公开(公告)日：2022-11-22
申请号：US17041393
申请日：2018-09-12
Inventor： Yidan Tang , Xinyu Liu , Yun Bai , Shengxu Dong , Chengyue Yang
IPC: H01L29/06 , H01L29/47 , H01L29/872 , H01L29/40 , H01L29/45
Abstract: The present disclosure discloses a semiconductor device and a preparation method thereof. The semiconductor device includes: an N+ substrate, a plurality of openings opening toward a back surface formed in the N+ substrate; an N− epitaxial layer formed on the N+ substrate, the N− epitaxial layer including: an active area epitaxial layer including a plurality of P++ area rings and a plurality of groove structures, wherein single groove structure is formed on single P++ area ring; a terminal area epitaxial layer including an N+ field stop ring and a plurality of P+ guard rings; a Schottky contact formed on the active area epitaxial layer, a passivation layer formed on the terminal area epitaxial layer, and ohmic contacts formed on the back surface of the N+ substrate and in the plurality of openings.
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公开(公告)号：US10750606B1
公开(公告)日：2020-08-18
申请号：US16447643
申请日：2019-06-20
Inventor： Xinyu Liu , Shengkai Wang , Yidan Tang , Yun Bai
IPC: H05H1/46
Abstract: A microwave plasma equipment and a method of exciting plasma are disclosed. The microwave plasma equipment includes: a plasma reaction device having a cavity in which a base support and a plasma-forming area is provided; a conversion device having gradient electrodes, the gradient electrodes being disposed inside the cavity and configured to generate a gradient electric field in the plasma-forming area; a gas supply device configured to introduce gas into the cavity of the plasma reaction device; and a microwave generating device configured to generate and transmit microwave into the cavity of the plasma reaction device.
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公开(公告)号：US10734199B2
公开(公告)日：2020-08-04
申请号：US16224435
申请日：2018-12-18
Inventor： Xinyu Liu , Yidan Tang , Shengkai Wang , Yun Bai , Chengyue Yang
Abstract: A microwave plasma generating device for plasma oxidation of SiC, comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity. Each resonant cavity includes a cylindrical cavity. A micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity, a diameter of each of the micro-holes is an odd multiple of wavelength, and an inner wall of the cylindrical cavity has a metal micro-nano structure, the metal micro-nano structure has a periodic dimension of λ/n, where λ is wavelength of an incident wave, and n is refractive index of material of the resonant cavity. The outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity, and the oxygen-containing gas forms an oxygen plasma around the resonant cavities for oxidizing SiC; a stage is disposed under the resonant cavities.
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公开(公告)号：US10699898B2
公开(公告)日：2020-06-30
申请号：US16287902
申请日：2019-02-27
Inventor： Xinyu Liu , Shengkai Wang , Yun Bai , Yidan Tang , Zhonglin Han , Xiaoli Tian , Hong Chen , Chengyue Yang
Abstract: A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including: step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device; step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage; step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue; step four, stopping the introduction of oxygen-containing gas and the reaction completely.
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