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公开(公告)号：US10854254B2
公开(公告)日：2020-12-01
申请号：US16671501
申请日：2019-11-01
发明人： Jea Gun Park , Du Yeong Lee , Seung Eun Lee
摘要： The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.
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公开(公告)号：US11968915B2
公开(公告)日：2024-04-23
申请号：US17480699
申请日：2021-09-21
发明人： Jea Gun Park , Soo Min Jin , Dong Won Kim , Hea Jee Kim , Dae Seong Woo , Sang Hong Park , Sung Mok Jung , Dong Eon Kim
CPC分类号： H10N70/8416 , H10B63/80 , H10N70/8828 , H10N70/883
摘要： A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.
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公开(公告)号：US11133458B2
公开(公告)日：2021-09-28
申请号：US16963051
申请日：2019-01-04
发明人： Jea Gun Park , Jin Young Choi , Han Sol Jun , Dong Gi Lee , Kondo Kei , Jong Ung Baek
摘要： Disclosed is a memory device. A memory device according to an embodiment of the present invention includes a memory device including a substrate; and a lower electrode, seed layer, lower synthetic antiferromagnetic layer, magnetic tunnel junction, upper synthetic antiferromagnetic layer, and upper electrode that are laminated on the substrate, wherein the magnetic tunnel junction includes a lower pinned layer, lower tunnel barrier layer, lower free layer, separation layer, upper free layer, upper tunnel barrier layer and upper pinned layer that are sequentially laminated.
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公开(公告)号：US10586919B2
公开(公告)日：2020-03-10
申请号：US16094265
申请日：2015-03-18
发明人： Jea Gun Park , Du Yeong Lee , Seung Eun Lee , Min Su Jeon , Jong Ung Baek , Tae Hun Shim
摘要： A memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. The lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.
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公开(公告)号：US10373825B1
公开(公告)日：2019-08-06
申请号：US15991464
申请日：2018-05-29
发明人： Jea Gun Park , Tae Hun Shim , Jae Hyoung Shim , Il Hwan Kim
IPC分类号： H01L21/02 , H01L21/683
摘要： Disclosed is a method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure. A method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure according to an embodiment of the present disclosure includes a step of coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; a step of allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; a step of allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and a step of separating the temporary substrate, wherein each of the nanoparticles with a core-shell structure includes a core and an ionic polymer shell coated on a surface of the core surface.
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公开(公告)号：US10510532B1
公开(公告)日：2019-12-17
申请号：US15991505
申请日：2018-05-29
发明人： Jea Gun Park , Jae Hyoung Shim , Tae Hun Shim
IPC分类号： H01L21/762 , H01L21/26 , H01L21/02 , H01L21/768 , H01L21/265
摘要： Disclosed is a method of fabricating a gallium nitride substrate using a plurality of ion implantation processes. A method of fabricating a gallium nitride substrate using a plurality of ion implantation processes according to an embodiment of the present disclosure includes a step of forming a bonding oxide film on the first gallium nitride; a step of performing first ion implantation for a surface of the first gallium nitride, on which the bonding oxide film is formed, at least once to form a damaged layer, thereby releasing bowing of the first gallium nitride; a step of performing second ion implantation for the surface of the first gallium nitride, on which the bonding oxide film is formed, to form a blister layer; a step of bonding the bonding oxide film of the first gallium nitride to a temporary substrate; a step of separating the first gallium nitride using the blister layer to form a seed layer; and a step of allowing growth of the second gallium nitride using the seed layer to form bulk gallium nitride.
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公开(公告)号：US11827825B2
公开(公告)日：2023-11-28
申请号：US17043273
申请日：2020-05-22
发明人： Jea Gun Park , Seung Jae Lee , Ji Eun Lee , Chang Jin Lee
CPC分类号： C09K11/616 , C09K11/0883 , C09K11/55 , C09K11/705 , B82Y20/00 , B82Y40/00
摘要： Disclosed are quantum dots including a luminescent dopant. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core and a shell surrounding the core, wherein at least one of an interior of the core and an interface between the core and the shell is doped with a luminescent group I dopant.
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公开(公告)号：US11296276B2
公开(公告)日：2022-04-05
申请号：US16688510
申请日：2019-11-19
发明人： Jea Gun Park , Jong Ung Baek , Kei Ashiba , Jin Young Choi , Mi Ri Park , Hyun Gyu Lee , Han Sol Jun , Sun Hwa Jung
摘要： Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.
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公开(公告)号：US11258935B2
公开(公告)日：2022-02-22
申请号：US16080347
申请日：2018-04-20
发明人： Jea Gun Park , Il Hwan Kim , Jun Seong Park , Ji Ho Choi
IPC分类号： H04N5/225 , H04N13/239 , H04N9/04 , C09K11/08 , H01L27/146 , H01L31/0232 , B82Y20/00
摘要： The present invention discloses a dual image sensor. The dual image sensor according to one embodiment of the present invention includes first and second image sensor modules mounted on a printed circuit board, wherein the first image sensor module includes a first housing mounted on the printed circuit board; a first image sensor mounted on the printed circuit board and formed on a first surface of the first housing; and a first lens formed on a second surface of the first housing, and the second image sensor module includes a second housing mounted on the printed circuit board; a second image sensor mounted on the printed circuit board and formed on a first surface of the second housing; a second lens formed on a second surface of the second housing; and a quantum dot layer formed between the second image sensor and the second lens and absorbing ultraviolet light and emitting visible light converted from the absorbed ultraviolet light.
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公开(公告)号：US10453510B2
公开(公告)日：2019-10-22
申请号：US16075474
申请日：2017-02-03
发明人： Jea Gun Park , Du Yeong Lee , Seung Eun Lee
摘要： The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic (SyAF) layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, SyAF layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the SyAF layers to grow in the FCC (111) direction.
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