公开(公告)号：US11258935B2

公开(公告)日：2022-02-22

申请号：US16080347

申请日：2018-04-20

申请人： Industry-University Cooperation Foundation Hanyang University

发明人： Jea Gun Park ,  Il Hwan Kim ,  Jun Seong Park ,  Ji Ho Choi

IPC分类号： H04N5/225 ,  H04N13/239 ,  H04N9/04 ,  C09K11/08 ,  H01L27/146 ,  H01L31/0232 ,  B82Y20/00

摘要： The present invention discloses a dual image sensor. The dual image sensor according to one embodiment of the present invention includes first and second image sensor modules mounted on a printed circuit board, wherein the first image sensor module includes a first housing mounted on the printed circuit board; a first image sensor mounted on the printed circuit board and formed on a first surface of the first housing; and a first lens formed on a second surface of the first housing, and the second image sensor module includes a second housing mounted on the printed circuit board; a second image sensor mounted on the printed circuit board and formed on a first surface of the second housing; a second lens formed on a second surface of the second housing; and a quantum dot layer formed between the second image sensor and the second lens and absorbing ultraviolet light and emitting visible light converted from the absorbed ultraviolet light.

公开(公告)号：US10373825B1

公开(公告)日：2019-08-06

申请号：US15991464

申请日：2018-05-29

申请人： Industry-University Cooperation Foundation Hanyang University

发明人： Jea Gun Park ,  Tae Hun Shim ,  Jae Hyoung Shim ,  Il Hwan Kim

IPC分类号： H01L21/02 ,  H01L21/683

摘要： Disclosed is a method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure. A method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure according to an embodiment of the present disclosure includes a step of coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; a step of allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; a step of allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and a step of separating the temporary substrate, wherein each of the nanoparticles with a core-shell structure includes a core and an ionic polymer shell coated on a surface of the core surface.