发明授权
- 专利标题： Method for manufacturing gallium nitride substrate using the multi ion implantation
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申请号： US15991505申请日： 2018-05-29
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公开(公告)号： US10510532B1公开(公告)日： 2019-12-17
- 发明人: Jea Gun Park , Jae Hyoung Shim , Tae Hun Shim
- 申请人： Industry-University Cooperation Foundation Hanyang University
- 申请人地址： KR Seoul
- 专利权人： Industry-University Cooperation Foundation Hanyang University
- 当前专利权人： Industry-University Cooperation Foundation Hanyang University
- 当前专利权人地址： KR Seoul
- 代理机构： Sughrue Mion, PLLC
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/26 ; H01L21/02 ; H01L21/768 ; H01L21/265
摘要：
Disclosed is a method of fabricating a gallium nitride substrate using a plurality of ion implantation processes. A method of fabricating a gallium nitride substrate using a plurality of ion implantation processes according to an embodiment of the present disclosure includes a step of forming a bonding oxide film on the first gallium nitride; a step of performing first ion implantation for a surface of the first gallium nitride, on which the bonding oxide film is formed, at least once to form a damaged layer, thereby releasing bowing of the first gallium nitride; a step of performing second ion implantation for the surface of the first gallium nitride, on which the bonding oxide film is formed, to form a blister layer; a step of bonding the bonding oxide film of the first gallium nitride to a temporary substrate; a step of separating the first gallium nitride using the blister layer to form a seed layer; and a step of allowing growth of the second gallium nitride using the seed layer to form bulk gallium nitride.
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