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公开(公告)号：US10453510B2
公开(公告)日：2019-10-22
申请号：US16075474
申请日：2017-02-03
发明人： Jea Gun Park , Du Yeong Lee , Seung Eun Lee
摘要： The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic (SyAF) layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, SyAF layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the SyAF layers to grow in the FCC (111) direction.
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公开(公告)号：US10586919B2
公开(公告)日：2020-03-10
申请号：US16094265
申请日：2015-03-18
发明人： Jea Gun Park , Du Yeong Lee , Seung Eun Lee , Min Su Jeon , Jong Ung Baek , Tae Hun Shim
摘要： A memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. The lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.
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公开(公告)号：US20200066319A1
公开(公告)日：2020-02-27
申请号：US16671501
申请日：2019-11-01
发明人： Jea Gun PARK , Du Yeong Lee , Seung Eun Lee
摘要： The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.
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公开(公告)号：US10854254B2
公开(公告)日：2020-12-01
申请号：US16671501
申请日：2019-11-01
发明人： Jea Gun Park , Du Yeong Lee , Seung Eun Lee
摘要： The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.
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公开(公告)号：US11050014B2
公开(公告)日：2021-06-29
申请号：US16094365
申请日：2015-03-18
发明人： Jea Gun Park , Du Yeong Lee , Seung Eun Lee , Min Su Jeon , Jong Ung Baek , Tae Hun Shim
摘要： A memory device contains lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode, which are formed on a substrate in a laminated manner. In the memory device, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.
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公开(公告)号：US20200357450A9
公开(公告)日：2020-11-12
申请号：US16671501
申请日：2019-11-01
发明人： Jea Gun PARK , Du Yeong Lee , Seung Eun Lee
摘要： The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.
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公开(公告)号：US10783945B2
公开(公告)日：2020-09-22
申请号：US16686510
申请日：2019-11-18
发明人： Jea Gun Park , Du Yeong Lee , Seung Eun Lee
摘要： The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.
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公开(公告)号：US10580964B2
公开(公告)日：2020-03-03
申请号：US15707491
申请日：2017-09-18
发明人： Jea Gun Park , Du Yeong Lee , Song Hwa Hong , Jin Young Choi , Seung Eun Lee , Junli Li
摘要： The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic antiferromagnetic layer, and upper electrode formed on the substrate.
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