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1.发明授权Oxide semiconductor field effect transistor and method for manufacturing the same 有权氧化物半导体场效应晶体管及其制造方法公开(公告)号：US08723175B2
公开(公告)日：2014-05-13
申请号：US13748831
申请日：2013-01-24
IPC分类号： C23C14/00 , H01L29/786 , H01L29/221
CPC分类号： H01L29/263 , C23C14/086 , H01L29/7869
摘要： A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 (1) In/(In+X)=0.29 to 0.99 (2) Zn/(X+Zn)=0.29 to 0.99 (3).
摘要翻译： 一种场效应晶体管，包括：包含含有In，Zn和选自Zr，Hf，Ge，Si，Ti，Mn，W，Mo，V，Cu， （1）〜（3）中的In /（In + Zn）= 0.2〜0.8（1）In /（In） + X）= 0.29〜0.99（2）Zn /（X + Zn）= 0.29〜0.99（3）。
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公开(公告)号：US11328911B2
公开(公告)日：2022-05-10
申请号：US16310388
申请日：2017-06-16
摘要： An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.
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公开(公告)号：US11251310B2
公开(公告)日：2022-02-15
申请号：US16485381
申请日：2018-02-15
发明人： Kazuyoshi Inoue , Masatoshi Shibata
IPC分类号： H01L21/363 , H01L29/78 , H01L29/80 , C23C14/08 , C23C14/34 , C04B35/01 , H01L29/786 , C04B35/626 , C04B35/64 , H01L21/02 , H01L29/24 , H01L29/66
摘要： An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1), 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2), and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03≤X/(In+Ga+Sn+X)≤0.25 . . . (4).
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公开(公告)号：US09209257B2
公开(公告)日：2015-12-08
申请号：US14085199
申请日：2013-11-20
发明人： Futoshi Utsuno , Kazuyoshi Inoue , Hirokazu Kawashima , Masashi Kasami , Koki Yano , Kota Terai
IPC分类号： H01B1/02 , H01B1/08 , H01L29/24 , C04B35/01 , C04B35/626 , C04B35/645 , C23C14/08 , C23C14/34 , H01L21/02 , H01L29/786
CPC分类号： H01L29/242 , C04B35/01 , C04B35/6261 , C04B35/645 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3286 , C04B2235/3409 , C04B2235/441 , C04B2235/443 , C04B2235/449 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6567 , C04B2235/6585 , C04B2235/72 , C04B2235/76 , C04B2235/761 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01L21/02565 , H01L29/7869
摘要： An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
摘要翻译： 氧化物烧结体包括固溶于其中的氧化铟和镓，所述氧化物烧结体的原子比“Ga /（Ga + In）”为0.001〜0.12，含有基于80原子％以上的量的铟和镓 总金属原子，并具有In2O3二氧化硅结构。
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公开(公告)号：US11987504B2
公开(公告)日：2024-05-21
申请号：US17860678
申请日：2022-07-08
IPC分类号： H01B1/08 , C01G15/00 , C04B35/01 , C04B35/44 , C04B35/50 , C23C14/34 , C04B35/64 , H01J37/34
CPC分类号： C01G15/006 , C01G15/00 , C04B35/01 , C04B35/44 , C04B35/50 , C23C14/34 , C23C14/3414 , H01B1/08 , C01P2002/72 , C01P2006/10 , C01P2006/40 , C04B35/64 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3286 , C04B2235/3293 , C04B2235/6562 , C04B2235/6567 , C04B2235/764 , C04B2235/77 , C04B2235/80 , C04B2235/9638 , H01J37/3426 , H01J37/3429
摘要： A garnet compound represented by a general formula (I):
Ln3In2Ga3-XAlXO12 (I)
(in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X-
6.发明授权公开(公告)号：US11728390B2
公开(公告)日：2023-08-15
申请号：US16482203
申请日：2018-01-23
发明人： Kazuyoshi Inoue , Masatoshi Shibata
IPC分类号： H01L29/24 , C04B35/01 , C04B35/64 , C23C14/08 , C23C14/34 , H01L29/66 , H01L29/786 , H01L29/26
CPC分类号： H01L29/24 , C04B35/01 , C04B35/64 , C23C14/086 , C23C14/3414 , H01L29/26 , H01L29/66969 , H01L29/66977 , H01L29/78693 , C04B2235/3217 , C04B2235/3286 , C04B2235/3293 , C04B2235/602 , H01L29/263
摘要： An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1); 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2); and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05≤Al/(In+Ga+Sn+Al)≤0.30 . . . (4).
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7.发明申请OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权氧化物半导体场效应晶体管及其制造方法公开(公告)号：US20130140175A1
公开(公告)日：2013-06-06
申请号：US13748831
申请日：2013-01-24
IPC分类号： C23C14/08
CPC分类号： H01L29/263 , C23C14/086 , H01L29/7869
摘要： A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 (1) In/(In+X)=0.29 to 0.99 (2) Zn/(X+Zn)=0.29 to 0.99 (3).
摘要翻译： 一种场效应晶体管，包括：包含含有In，Zn和选自Zr，Hf，Ge，Si，Ti，Mn，W，Mo，V，Cu， （1）〜（3）中的In /（In + Zn）= 0.2〜0.8（1）In /（In） + X）= 0.29〜0.99（2）Zn /（X + Zn）= 0.29〜0.99（3）。
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公开(公告)号：US11447398B2
公开(公告)日：2022-09-20
申请号：US16325170
申请日：2017-08-25
摘要： A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X
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公开(公告)号：US11342466B2
公开(公告)日：2022-05-24
申请号：US16482226
申请日：2018-01-31
发明人： Kazuyoshi Inoue , Masatoshi Shibata
IPC分类号： H01L29/786 , C23C14/08 , C23C14/34 , H01L21/203 , H01L27/12 , C04B35/01 , H01L21/02 , H01L29/66
摘要： A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu-K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).
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公开(公告)号：US11078120B2
公开(公告)日：2021-08-03
申请号：US16096641
申请日：2017-04-26
IPC分类号： H01L21/02 , C04B35/01 , C04B35/626 , C04B35/64 , C23C14/08 , C23C14/34 , H01L27/12 , H01L29/24 , H01L29/786
摘要： An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.
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