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    Low defect density diamond single crystal and a process for the production of the same
    1.
    发明授权
    Low defect density diamond single crystal and a process for the production of the same 失效
    低缺陷密度菱形单晶及其制造方法相同

    公开(公告)号：US5908503A

    公开(公告)日：1999-06-01

    申请号：US567428

    申请日：1995-12-05

    申请人： Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

    发明人： Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

    IPC分类号： B01J3/06 ,  C30B11/00 ,  C30B29/04

    CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/068

    摘要： A colorless, transparent low defect density, synthetic type IIa diamond single crystal, in which the etch pits due to needle-shaped defects are at most 3.times.10.sup.5 pieces/cm.sup.2, and which can be applied to uses needing high crystallinity of diamond, for example, monochromators, semiconductor substrates, spectroscopic crystals in X-ray range, electronic materials, etc., is provided by a process for the production of the colorless, transparent low defect density, synthetic diamond single crystal by growing new diamond crystal on a seed crystal of diamond by the temperature gradient method which comprises using a crystal defect-free diamond single crystal, as a seed crystal of diamond, and optionally subjecting to a heat treatment in a non-oxidizing atmosphere at a low pressure and a temperature of 1100 to 1600.degree. C.

    摘要翻译： 无色，透明的低缺陷密度的合成IIa型金刚石单晶，其中由于针状缺陷引起的蚀刻坑最多为3×10 5个/ cm 2，并且其可以应用于需要高结晶度的金刚石，例如， 单色仪，半导体衬底，X射线范围内的分光晶体，电子材料等，通过生产无色透明低缺陷密度合成金刚石单晶的方法提供，通过在晶种上生长新的金刚石晶体 金刚石，其包括使用无晶体缺陷金刚石单晶作为金刚石的晶种，并且可选地在低压和1100至1600℃的非氧化性气氛中进行热处理。 C。

    Process for the production of synthetic diamond
    2.
    发明授权
    Process for the production of synthetic diamond 失效
    合成金刚石生产工艺

    公开(公告)号：US6030595A

    公开(公告)日：2000-02-29

    申请号：US684725

    申请日：1996-07-22

    申请人： Hitoshi Sumiya ,  Shuichi Satoh ,  Yoshiki Nishibayashi

    发明人： Hitoshi Sumiya ,  Shuichi Satoh ,  Yoshiki Nishibayashi

    IPC分类号： B01J3/06 ,  C01B31/06 ,  C01B33/06

    CPC分类号： B01J3/062 ,  C01B31/06 ,  C01B33/06 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

    摘要： A high purity synthetic diamond with less impurities, crystals defects, strains, etc. can be provided, in which the nitrogen content is at most 10 ppm, preferably at most 0.1 ppm and the boron content is at most 1 ppm, preferably at most 0.1 ppm or in which nitrogen atoms and boron atoms are contained in the crystal and the difference between the number of the nitrogen atoms and that of the boron atoms is at most 1.times.10.sup.17 atoms/cm.sup.3. The strain-free synthetic diamond can be produced by a process for the production of a strain-free synthetic diamond by the temperature gradient method, which comprises using a carbon source having a boron content of at most 10 ppm and a solvent metal having a boron content of at most 1 ppm and adding a nitrogen getter to the solvent metal, thereby synthesizing the diamond.

    摘要翻译： 可以提供具有较少杂质，晶体缺陷，应变等的高纯度合成金刚石，其中氮含量为至多10ppm，优选至多0.1ppm，硼含量为至多1ppm，优选至多0.1 ppm或其中氮原子和硼原子包含在晶体中，并且氮原子数与硼原子数之间的差异至多为1×10 17 atoms / cm 3。 无菌合成金刚石可以通过温度梯度法生产无应变合成金刚石的方法制备，该方法包括使用硼含量至多为10ppm的碳源和具有硼的溶剂金属 含量至多1ppm，并向溶剂金属中加入氮气吸收剂，从而合成金刚石。

    Process for the synthesis of diamond
    3.
    发明授权
    Process for the synthesis of diamond 失效
    金刚石合成工艺

    公开(公告)号：US6129900A

    公开(公告)日：2000-10-10

    申请号：US307493

    申请日：1994-09-16

    申请人： Shuichi Satoh ,  Hitoshi Sumiya ,  Kazuwo Tsuji ,  Yasushi Gouda

    发明人： Shuichi Satoh ,  Hitoshi Sumiya ,  Kazuwo Tsuji ,  Yasushi Gouda

    IPC分类号： B01J3/06

    CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/067 ,  B01J2203/068

    摘要： A colorless and transparent, substantially inclusion-free diamond crystal which can be applied to decorative uses and optical parts is synthesized by a process using a temperature gradient method in an ultra-high pressure apparatus. This process comprises using, as a solvent for the growth of the crystal, at least one metal selected from the group consisting of Fe, Co, Ni, Mn and Cr (at least two metals in the case of containing Fe) and as a nitrogen getter for the removal of nitrogen in the solvent, at least one metal selected from the group consisting of Al, Ti, Zr, Hf, V, Nb and Ta in a proportion of 0.5 to 7% by weight (at most 2% by weight when using only Al) to the solvent metal.

    摘要翻译： PCT No.PCT / JP92 / 00149 Sec。 371日期：1992年10月14日 102（e）日期1992年10月14日PCT提交1992年2月14日PCT公布。 公开号WO92 / 14542 日期1992年9月3日可以应用于装饰用途和光学部件的无色透明的基本上不含夹杂的金刚石晶体通过在超高压装置中使用温度梯度法的方法合成。 该方法包括使用选自Fe，Co，Ni，Mn和Cr中的至少一种金属作为晶体生长的溶剂（在含有Fe的情况下至少有两种金属）和作为氮 吸附剂用于除去溶剂中的氮，至少一种选自Al，Ti，Zr，Hf，V，Nb和Ta的金属，其含量为0.5〜7重量％（最多2重量％ 当仅使用Al时）溶剂金属。

    Diamond sintered compact and a process for the production of the same
    5.
    发明授权
    Diamond sintered compact and a process for the production of the same 失效
    金刚石烧结体及其制造方法

    公开(公告)号：US5769176A

    公开(公告)日：1998-06-23

    申请号：US675932

    申请日：1996-07-05

    申请人： Hitoshi Sumiya ,  Shuichi Satoh

    发明人： Hitoshi Sumiya ,  Shuichi Satoh

    IPC分类号： B01J3/06 ,  B22F7/06

    CPC分类号： B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  Y10T428/12146

    摘要： The present invention provides a diamond sintered compact having a higher strength as well as more excellent heat resistance, breakage resistance and corrosion resistance, as compared with those of the prior art, which thus can effectively be applied to tool materials for cutting or polishing of non-ferrous metals or ceramics, and edge materials of drill bits for excavating petroleum. The feature of the diamond sintered compact contains 0.1 to 30 volume % of at least one compound containing at least one element selected from the group consisting of silicon and titanium, and oxygen and the balance of diamond, for example, a titanate of a metal selected from the group consisting of iron, cobalt, nickel and manganese.

    摘要翻译： 本发明提供了与现有技术相比具有更高强度以及更优异的耐热性，耐破坏性和耐腐蚀性的金刚石烧结体，因此可有效地应用于用于切割或抛光非工具材料的工具材料 有色金属或陶瓷，以及用于挖掘石油的钻头的边缘材料。 金刚石烧结体的特征在于，含有0.1〜30体积％的至少一种含有选自硅和钛中的至少一种元素的化合物，氧和金刚石余量例如选自金属的钛酸盐 由铁，钴，镍和锰组成的组。

    Synthetic single crystal diamond for wire drawing dies
    6.
    发明授权
    Synthetic single crystal diamond for wire drawing dies 失效
    合成单晶金刚石拉丝模具

    公开(公告)号：US5560241A

    公开(公告)日：1996-10-01

    申请号：US484258

    申请日：1995-06-07

    申请人： Shuichi Satoh ,  Kazuwo Tsuji ,  Akito Yoshida ,  Nobuo Urakawa

    发明人： Shuichi Satoh ,  Kazuwo Tsuji ,  Akito Yoshida ,  Nobuo Urakawa

    IPC分类号： B21C3/02 ,  B28D5/00 ,  C30B33/00 ,  H01L23/373

    CPC分类号： B21C3/025 ,  B28D5/0011 ,  C30B29/04 ,  C30B33/00 ,  H01L23/3732 ,  H01L2924/0002

    摘要： A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane. The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.

    摘要翻译： 用于拉丝模的合成单晶金刚石; 公开了其制造过程和使用它的拉丝模具。 用于拉丝模的金刚石的至少一个平面是（111）面的解理面，拉丝模的拉丝孔垂直于解理面。 用于拉丝模具的金刚石是通过提供具有20-400ppm的Ib型金刚石氮的合成单晶生产的。 在使用诸如激光束，离子束和电子束的能量束的平行于（111）面的金刚石表面上形成凹槽。 将楔形物撞入槽中以切割金刚石，并获得板。 此外，板被分为多面体，使用能量束或叶片。 多面体的解理平面几乎平行于晶体的（111）面，因此使用解理面作为标准平面来构建绘图孔。

    Infrared optical element and method of making the same
    7.
    发明授权
    Infrared optical element and method of making the same 失效
    红外光学元件及其制造方法

    公开(公告)号：US5245189A

    公开(公告)日：1993-09-14

    申请号：US851942

    申请日：1992-03-13

    申请人： Shuichi Satoh ,  Yasushi Goda ,  Kazuwo Tsuji

    发明人： Shuichi Satoh ,  Yasushi Goda ,  Kazuwo Tsuji

    IPC分类号： G01N21/03 ,  G01N21/35 ,  G01N21/55 ,  G02B1/02

    CPC分类号： G02B1/02 ,  G01N21/3563 ,  G01N2021/0389 ,  G01N21/0317

    摘要： An infrared optical part comprised of a synthetic diamond single crystal, and a method of making the same. The infrared optical part is comprised of a synthetic diamond having a nitrogen content of not more than 5 ppm and a boron content of not more than 3 ppm, wherein the parallelism between its light incident and reflecting surfaces is not more than one minute. The infrared optical part is used as a window member in infrared spectral analysis. It is also used in the form of a pair of anvils for holding a sample therebetween in connection with the measurement of transmitted light that has passed through the sample after the sample is compressed. The part is also used in the form of an infrared ATR prism. The method involves the steps of abrading an infrared optical part having the above mentioned nitrogen and boron content by a grinder, measuring the parallelism between the light incident and reflecting surfaces of the part by laser light, and smoothing the grinding apparatus, whereby the parallelism is set to a level of not more than 2.91.times.10.sup.-4 radians.

    Purple diamond and method of producing the same
    8.
    发明授权
    Purple diamond and method of producing the same 失效
    紫色钻石及其制作方法

    公开(公告)号：US4950463A

    公开(公告)日：1990-08-21

    申请号：US272725

    申请日：1988-11-17

    申请人： Shuichi Satoh ,  Kazuwo Tsuji

    发明人： Shuichi Satoh ,  Kazuwo Tsuji

    IPC分类号： C01B31/06 ,  B28D5/00 ,  C30B33/00

    CPC分类号： B28D5/00 ,  C30B29/04 ,  C30B33/00

    摘要： A purple diamond has an absorption coefficient of the Ib type nitrogen at 500 nm, within the range of 0.2-2 cm.sup.-1, an absorption coefficient of the N-V center at an absorption peak of 570 nm, within the range of 0.3-10 cm.sup.-1, and absorption coefficients of the GR1 center, H2 center, H3 center, and H4 center which are less than 0.2 cm.sup.-1 in the visible region. A method of producing such a purple diamond uses as a starting material an Ib type artificial synthetic diamond crystal wherein the Ib type nitrogen content in the crystal is within the range of 8.times.10.sup.17 -1.4.times.10.sup.19 atoms/cm.sup.3, such a starting material is subjected to an electron beam irradiation of 5.times.10.sup.16 -2.times.10.sup.18 electrons/cm.sup.2 at 2-4 MeV, and then annealing the irradiated diamond in a vacuum of less than 10.sup.-2 Torr, at a temperature of 800.degree.-1100.degree. C. for more than 25 hours.

    Diamond laser, method for producing the same, and method for activating such a laser
    9.
    发明授权
    Diamond laser, method for producing the same, and method for activating such a laser 失效
    金刚石激光器，其制造方法以及激活这种激光的方法

    公开(公告)号：US4949347A

    公开(公告)日：1990-08-14

    申请号：US306813

    申请日：1989-02-03

    申请人： Shuichi Satoh ,  Kazuwo Tsuji ,  Takeru Nakashima

    发明人： Shuichi Satoh ,  Kazuwo Tsuji ,  Takeru Nakashima

    IPC分类号： H01S3/08 ,  C30B33/00 ,  H01S3/094 ,  H01S3/16

    CPC分类号： H01S3/16 ,  C30B29/04 ,  C30B33/00

    摘要： A diamond laser formed of a synthetic diamond provides a high output power and a variable wavelength in the near infrared region. The maximum value of the optical density of H2 centers in the direction of the pumping light is in the range of 0.01 to 4. Laser action is caused in the range of 1000 to 1400 nm by an external pumping light at 650 to 950 nm. Such a diamond laser is produced by preparing a synthetic Ib type diamond having a nitrogen concentration within the range of 1.times.10.sup.17 to 8.5 10.sup.19 atoms/cm.sup.3, subjecting this synthetic diamond to an electron irradiation with a dose of not less than 5.times.10.sup.17 electrons/cm.sup.2, and heat-treating the synthetic diamond in a vacuum of not more than 1 Torr or in an inert gas atmosphere and at a temperature within the range of 1400.degree. to 1850.degree. C. If the threshold value of the pumping light intensity necessary for causing laser action is Ith then, to make the pumping light intensity I greater than Ith throughout the laser crystal, it is important, that the maximum value of the optical density of H2 is within the range between 0.01 and 4.

    Process for synthesizing large diamond
    10.
    发明授权
    Process for synthesizing large diamond 失效
    合成大型钻石的方法

    公开(公告)号：US4836881A

    公开(公告)日：1989-06-06

    申请号：US192046

    申请日：1988-05-09

    申请人： Shuichi Satoh ,  Kazuwo Tsuji

    发明人： Shuichi Satoh ,  Kazuwo Tsuji

    IPC分类号： C30B29/04 ,  B01J3/06

    CPC分类号： B01J3/062 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10S117/902

    摘要： A process for synthesizing a large diamond having a diameter of 8 mm or more by the temperature gradient method, wherein a (111) or (100) surface of a seed crystal having a diameter of 3 mm or more is used as a growing surface, the entire area of the growing surface is first dissolved in the diamond-stable region before crystal growth is started, the crystal growth is effected using a plug of a solvent in which the height of the central portion thereof is higher than the height of the peripheral portion thereof, the plug of a solvent has a planar or curved surface on the side where the plug of a solvent contacts a carbon source during the crystal growth, and the crystal growth is effected under such pressure and temperature conditions that the growth of the (111) or (100) surface is predominant.