公开(公告)号：US08621923B2

公开(公告)日：2014-01-07

申请号：US12908979

申请日：2010-10-21

申请人： Heinz-Peter Frerichs

发明人： Heinz-Peter Frerichs

IPC分类号： G01N27/12

CPC分类号： G01N27/414

摘要： A humidity sensor has, on a substrate, at least one voltage sensor with a sensor region and at least one control electrode. The control electrode is connected to a signal source which is designed such that a variable control voltage can be applied to the control electrode. A moisture-permeable sensor layer whose dielectric constant depends on humidity is located on the sensor region. The control electrode is adjacent to the sensor layer in such a manner that the measured voltage signal of the voltage sensor depends on the control voltage and the humidity. The voltage sensor is connected to an analysis unit for ascertaining the humidity on the basis of the measured voltage signal. In the vertical projection onto the plane in which the substrate extends, the control electrode is located laterally next to the sensor region.

摘要翻译： 湿度传感器在基板上具有至少一个具有传感器区域和至少一个控制电极的电压传感器。 控制电极连接到信号源，该信号源被设计成可以将可变控制电压施加到控制电极。 介电常数取决于湿度的透湿传感器层位于传感器区域上。 控制电极与传感器层相邻，使得电压传感器的测量电压信号取决于控制电压和湿度。 电压传感器连接到分析单元，用于根据测量的电压信号确定湿度。 在基板延伸的平面上的垂直投影中，控制电极位于传感器区域的横向附近。

公开(公告)号：US08324913B2

公开(公告)日：2012-12-04

申请号：US12594510

申请日：2008-04-02

申请人： Mirko Lehmann ,  Heinz-Peter Frerichs ,  Ingo Freund

发明人： Mirko Lehmann ,  Heinz-Peter Frerichs ,  Ingo Freund

IPC分类号： G01R27/08 ,  G01N19/00

CPC分类号： G01N27/414 ,  G01N25/56

摘要： The invention relates to a moisture sensor which comprises a receiving area on its surface for a moisture film, the layer thickness of which is dependent on the relative humidity in the surrounding of the receiving area. The moisture sensor has a signal source which is connected to at least one control electrode at at least one infeed, the electrode abutting the receiving area, for providing a control voltage to the moisture film. The moisture sensor comprises at least one potential sensor which has at least one sensor area, under the receiving area, which is spaced apart from the at least one infeed. The sensor area is electrically insulated from the receiving area by an insulation layer, located between the sensor area and the receiving area, in such a way that an electrical potential can be capacitively detected by means of the potential sensor, the potential being dependent on the layer thickness of the moisture film and the control voltage.

摘要翻译： 本发明涉及一种水分传感器，其包括在其表面上的用于湿膜的接收区域，其层厚度取决于接收区域周围的相对湿度。 水分传感器具有信号源，该信号源在至少一个进给处连接到至少一个控制电极，电极邻接接收区域，以提供对湿气膜的控制电压。 湿度传感器包括至少一个在至少一个传感器区域的电位传感器，该传感器区域在与至少一个进料间隔开的接收区域下方。 传感器区域通过位于传感器区域和接收区域之间的绝缘层与接收区域电绝缘，使得电位可以通过电位传感器电容性地检测，电位取决于 水分膜的层厚度和控制电压。

公开(公告)号：US08242545B2

公开(公告)日：2012-08-14

申请号：US12765339

申请日：2010-04-22

申请人： Christoph Wilbertz ,  Heinz-Peter Frerichs ,  Ingo Freund

发明人： Christoph Wilbertz ,  Heinz-Peter Frerichs ,  Ingo Freund

IPC分类号： G01N27/403

CPC分类号： G01N27/4143

摘要： A device for detecting a gas or gas mixture has a first and a second gas sensor. The first gas sensor is a MOSFET, which comprises a first source, a first drain, a first channel zone disposed between the latter elements, and a first gas sensitive layer capacitively coupled to the first channel zone that contains palladium and reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensor has, in a semiconductor substrate, a second source, a second drain, and a second channel zone between the latter elements, which is capacitively coupled via an air gap to a suspended gate. The latter comprises a second gas sensitive layer that reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensitive layer is arranged on a support layer and faces the air gap. The support layer is formed by another semiconductor substrate, and the first gas sensor is integrated in the front side of the second semiconductor substrate facing away from the air gap.

摘要翻译： 用于检测气体或气体混合物的装置具有第一和第二气体传感器。 第一气体传感器是MOSFET，其包括第一源极，第一漏极，设置在后一个元件之间的第一沟道区，以及电容耦合到第一沟道区的第一气体敏感层，所述第一气体敏感层包含钯并且反应于 随着工作功能的变化，要检测的气体的浓度。 第二气体传感器在半导体衬底中具有在后一个元件之间的第二源极，第二漏极和第二沟道区域，其经由空气间隙电容耦合到悬浮栅极。 后者包括第二气体敏感层，其随着其功能的变化而响应待检测气体的浓度的变化。 第二气体敏感层布置在支撑层上并面向气隙。 支撑层由另一个半导体衬底形成，并且第一气体传感器集成在第二半导体衬底的远离气隙的前侧。

公开(公告)号：US20080237654A1

公开(公告)日：2008-10-02

申请号：US10592848

申请日：2005-03-04

申请人： Mirko Lehmann ,  Heinz-Peter Frerichs ,  Christoph Wilbertz

发明人： Mirko Lehmann ,  Heinz-Peter Frerichs ,  Christoph Wilbertz

IPC分类号： H01L27/088 ,  G01N7/00

CPC分类号： G01N27/4143 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device for detecting a gas or gas mixture having at least one first gas sensor designed as an SGFET and at least—one second, additional gas sensor designed as a Lundström-FET. The gas sensors are connected to a processing device designed to analyze the measurement signals from both types of gas sensors in order to detect the gas or gas mixture.

摘要翻译： 一种用于检测气体或气体混合物的装置，其具有设计为SGFET的至少一个第一气体传感器和设计为Lundström-FET的至少一个第二附加气体传感器。 气体传感器连接到设计用于分析来自两种类型的气体传感器的测量信号的处理装置，以便检测气体或气体混合物。

公开(公告)号：US06690057B1

公开(公告)日：2004-02-10

申请号：US09676630

申请日：2000-09-30

申请人： Heinz-Peter Frerichs

发明人： Heinz-Peter Frerichs

IPC分类号： H01L29788

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L27/11524

摘要： An EPROM structure for a nonvolatile semiconductor memory includes a plurality of memory cells that each include a floating gate transistor (6) that can be programmed by hot electrons and erased by UV light. An additional, common gate capacitance (7) is associated with each memory cell to raise the potential at the floating gate transistor (6) to the level required for writing by applying to the gate capacitances a predetermined voltage, common to all the memory cells.

摘要翻译： 用于非易失性半导体存储器的EPROM结构包括多个存储单元，每个存储单元包括可由热电子编程并被UV光擦除的浮栅晶体管（6）。 一个附加的公共栅极电容（7）与每个存储单元相关联，以将浮置栅极晶体管（6）上的电位提升到写入的电平，将栅极电容施加到所有存储单元共用的预定电压。

公开(公告)号：US08056394B2

公开(公告)日：2011-11-15

申请号：US12411132

申请日：2009-03-25

申请人： Heinz-Peter Frerichs ,  Hans-Günter Zimmer ,  Tobias Kolleth ,  Christoph Wilbertz

发明人： Heinz-Peter Frerichs ,  Hans-Günter Zimmer ,  Tobias Kolleth ,  Christoph Wilbertz

IPC分类号： G01N25/00

CPC分类号： G01N27/4143

摘要： In a procedure for measuring the concentration of a target gas, a gas sensor is provided whose sensor signal at constant temperature is dependent on a target gas concentration and has a lower measurement sensitivity in a first modulation range than in a second modulation range. The position of the modulation ranges is dependent on the temperature. The temperature of the gas sensor is controlled so that the sensor signal is essentially independent of the target gas concentration and lies within the second modulation range. The temperature of the gas sensor is then a measurement for the target gas concentration.

摘要翻译： 在用于测量目标气体浓度的过程中，提供了一种气体传感器，其传感器信号在恒定温度下取决于目标气体浓度，并且在第一调制范围内具有比在第二调制范围中更低的测量灵敏度。 调制范围的位置取决于温度。 控制气体传感器的温度，使得传感器信号基本上与目标气体浓度无关，并且处于第二调制范围内。 然后，气体传感器的温度是目标气体浓度的测量。

公开(公告)号：US20100270595A1

公开(公告)日：2010-10-28

申请号：US12765339

申请日：2010-04-22

申请人： Christoph Wilbertz ,  Heinz-Peter Frerichs ,  Ingo Freund

发明人： Christoph Wilbertz ,  Heinz-Peter Frerichs ,  Ingo Freund

IPC分类号： H01L21/30 ,  H01L29/66

CPC分类号： G01N27/4143

摘要： A device for detecting a gas or gas mixture has a first and a second gas sensor. The first gas sensor is a MOSFET, which comprises a first source, a first drain, a first channel zone disposed between the latter elements, and a first gas sensitive layer capacitively coupled to the first channel zone that contains palladium and reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensor has, in a semiconductor substrate, a second source, a second drain, and a second channel zone between the latter elements, which is capacitively coupled via an air gap to a suspended gate. The latter comprises a second gas sensitive layer that reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensitive layer is arranged on a support layer and faces the air gap. The support layer is formed by another semiconductor substrate, and the first gas sensor is integrated in the front side of the second semiconductor substrate facing away from the air gap.

摘要翻译： 用于检测气体或气体混合物的装置具有第一和第二气体传感器。 第一气体传感器是MOSFET，其包括第一源极，第一漏极，设置在后一个元件之间的第一沟道区，以及电容耦合到第一沟道区的第一气体敏感层，其包含钯并且对第 随着工作功能的变化，要检测的气体的浓度。 第二气体传感器在半导体衬底中具有在后一个元件之间的第二源极，第二漏极和第二沟道区域，其经由空气间隙电容耦合到悬浮栅极。 后者包括第二气体敏感层，其随着其功能的变化而响应待检测气体的浓度的变化。 第二气体敏感层布置在支撑层上并面向气隙。 支撑层由另一个半导体衬底形成，并且第一气体传感器集成在第二半导体衬底的远离气隙的前侧。

公开(公告)号：US20070189931A1

公开(公告)日：2007-08-16

申请号：US10566412

申请日：2004-07-24

申请人： Jurgen Ruhe ,  J.D. Jeyaprakash Samuel ,  Heinz-Peter Frerichs ,  Mirko Lehmann

发明人： Jurgen Ruhe ,  J.D. Jeyaprakash Samuel ,  Heinz-Peter Frerichs ,  Mirko Lehmann

IPC分类号： G01N30/96

CPC分类号： G01N33/0059 ,  G01N27/4143

摘要： The invention relates to a gas sensor comprising a substrate of a first charge carrier type whereon a drain and a source of a second charge carrier type are arranged. A channel area is formed between the drain and the source. The gas sensor also comprises a gas sensitive layer comprising poles between which a gas induced voltage is produced according to the concentration of a gas which is in contact with the layer. In order to measure said voltage, a pole of the gas sensitive layer is capacitatively coupled to the channel area by means of an air gap and the other pole is connected to a counter-electrode having a reference potential. A hydrophobic layer is arranged on the surface of the gas sensor between the gas sensitive layer and the channel area and/or on a sensor electrode which is connected to a gate electrode arranged on the channel area.

摘要翻译： 本发明涉及一种气体传感器，其包括第一电荷载体类型的衬底，其中布置有第二电荷载体类型的漏极和源极。 在漏极和源极之间形成沟道区域。 气体传感器还包括气体敏感层，气体敏感层包括根据与层接触的气体的浓度而产生气体感应电压的极点。 为了测量所述电压，气敏层的磁极通过气隙电容耦合到通道区域，另一极连接到具有参考电位的对电极。 疏水层布置在气体传感器的表面之间，气体敏感层和通道区域之间和/或在连接到布置在通道区域上的栅电极的传感器电极上。

公开(公告)号：US07112987B2

公开(公告)日：2006-09-26

申请号：US10862833

申请日：2004-06-07

申请人： Heinz-Peter Frerichs

发明人： Heinz-Peter Frerichs

IPC分类号： G01R31/26

CPC分类号： G01N27/4148 ,  G01N27/4143

摘要： The semiconductor sensor has at least one field-effect transistor (31; 31, 32) which is coupled to a sensitive electrode and which has measuring phases that are interruptible by idle phases through a control device (50). During the idle phases, the field-effect transistor or transistors (30; 31, 32) together with their terminals is or are connected to the same potential, preferably the ground potential.

摘要翻译： 半导体传感器具有至少一个场效应晶体管（31; 31,32），其耦合到敏感电极并且具有可通过控制装置（50）通过空闲相位中断的测量相位。 在空闲阶段期间，场效应晶体管或晶体管（30; 31,32）与它们的端子一起被连接到相同的电位，优选地接地电位。

公开(公告)号：US06955749B2

公开(公告)日：2005-10-18

申请号：US10121920

申请日：2002-04-12

申请人： Heinz-Peter Frerichs

发明人： Heinz-Peter Frerichs

IPC分类号： G01N27/414 ,  G01N27/26 ,  H01L23/58

CPC分类号： G01N27/4143 ,  G01N27/4148 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a sensor for measuring ion concentration or gas concentration, with a gas- or ion-sensitive layer (6) that has two sensitive partial areas (20 and 21), two conducting areas (1b and 2b), each coupled capacitively through air gaps (9and 10) with one of the sensitive partial areas (20 and 21), with the capacitances of the couplings being different, and a comparison circuit (1a, 2a, 3, 4, 5) which has at least one first transistor (T1) connected with the first conductive area and a second transistor (T2) connected with the second conductive area, and at least one output at which a signal can be tapped that depends on the potential of sensitive layer (6).

摘要翻译： 本发明涉及一种用于测量离子浓度或气体浓度的传感器，其中气体或离子敏感层（6）具有两个敏感部分区域（20和21），两个导电区域（1b和2b），每个 通过气隙（9和10）与敏感部分区域（20和21）之一电容性地耦合，耦合的电容不同，以及比较电路（1a，2a，3,4,5），其中 具有与第一导电区域连接的至少一个第一晶体管（T 1）和与第二导电区域连接的第二晶体管（T 2），以及至少一个输出，在该输出端可以触发信号，该信号取决于敏感的电位 层（6）。