公开(公告)号：US20190259574A1

公开(公告)日：2019-08-22

申请号：US16279628

申请日：2019-02-19

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yo YAMAMOTO ,  Shota TORIKAWA ,  Hidekazu SUZUKI ,  Hiroyuki SUZUKI ,  Mamoru OKABE ,  Tatsuya ASAHATA

IPC: H01J37/30 ,  H01J37/08 ,  H01J37/14 ,  H01J37/147 ,  H01J37/09 ,  H01J37/28

Abstract: Disclosed are a charged particle beam apparatus wherein the charged particle beam apparatus can efficiently performs finish processing of a sample and acquisition of a high-precision SEM image of a processing surface of the sample in a short time, and a sample processing observation method using the same.The charged particle beam apparatus includes: a gallium ion beam column radiating a gallium ion beam toward a sample to form a cross-section of the sample; an electron beam column having a semi-in-lens type objective lens and radiating an electron beam toward the sample; a gas ion beam column radiating a gas ion beam toward the sample to perform finish processing of the cross-section of the sample, wherein the gas ion beam has a beam diameter larger than a maximum diameter of the cross-section of the sample.

公开(公告)号：US20200310246A1

公开(公告)日：2020-10-01

申请号：US16785368

申请日：2020-02-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yoshitomo NAKAGAWA ,  Mitsuto ASO ,  Katsumi SUZUKI ,  Mamoru OKABE ,  Masakatsu HASUDA

IPC: G03F1/74 ,  H01J37/317

Abstract: Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.