公开(公告)号：US20210296080A1

公开(公告)日：2021-09-23

申请号：US17207184

申请日：2021-03-19

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Hiroshi OBA ,  Yasuhiko SUGIYAMA ,  Yoshitomo NAKAGAWA ,  Koji NAGAHARA

IPC: H01J37/12 ,  H01J37/20 ,  H01J37/09 ,  H01J37/317 ,  H01J37/08 ,  H01J37/21

Abstract: Provided is a focused ion beam processing apparatus including: an ion source; a sample stage a condenser lens; an aperture having a slit in a straight line shape; a projection lens and the sample stage, wherein, in a transfer mode, by Köhler illumination, with an applied voltage of the condenser lens when a focused ion beam is focused on a main surface of the projection lens scaled to be 100, the applied voltage is set to be less than 100 and greater than or equal to 80; a position of the aperture is set such that the focused ion beam is masked by the aperture with the one side of the aperture at a distance greater than 0 μm and equal to or less than 500 μm from a center of the focused ion beam; and the shape of the slit is transferred onto the sample.

公开(公告)号：US20200310246A1

公开(公告)日：2020-10-01

申请号：US16785368

申请日：2020-02-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yoshitomo NAKAGAWA ,  Mitsuto ASO ,  Katsumi SUZUKI ,  Mamoru OKABE ,  Masakatsu HASUDA

IPC: G03F1/74 ,  H01J37/317

Abstract: Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.