公开(公告)号：US20150270096A1

公开(公告)日：2015-09-24

申请号：US14665391

申请日：2015-03-23

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Makoto SATO ,  Tatsuya ASAHATA ,  Masahiro KIYOHARA ,  Ikuko NAKATANI

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/22 ,  H01J37/20

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/30438

Abstract: A charged particle beam apparatus is provided with a controller configured to control other components and perform operations including: an irradiating operation to irradiate a first position of a sample with a charged particle beam while gradually changing a scan range of the charged particle beam to move from a first position; a first image acquiring operation to acquire an image of each portion where the charged particle beam moves; an indicator forming operation to form an indicator at a second position by the charged particle beam when the scan range of the charged particle beam reaches the second position; a second image acquiring operation to acquire an image of the second position in a state where the indicator is formed; and an adjusting operation to adjust relative position between the stage and the scan range of the charged particle beam.

Abstract translation: 带电粒子束装置设置有控制器，其被配置为控制其他部件并执行操作，包括：照射操作，用于在逐渐改变带电粒子束的扫描范围以从 第一职位 第一图像获取操作，用于获取所述带电粒子束移动的每个部分的图像; 指示器形成操作，当带电粒子束的扫描范围达到第二位置时，通过带电粒子束在第二位置形成指示器; 第二图像获取操作，用于在形成指示器的状态下获取第二位置的图像; 以及调整操作，以调整带电粒子束的阶段和扫描范围之间的相对位置。

公开(公告)号：US20130209700A1

公开(公告)日：2013-08-15

申请号：US13761332

申请日：2013-02-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Hidekazu SUZUKI ,  Ikuko NAKATANI

IPC: C23C16/48

CPC classification number: C23C16/486 ,  G01N1/28 ,  G01N1/32 ,  H01J2237/31745

Abstract: A TEM sample preparation method including: placing a thin sample on a sample holder so that a first side surface of the thin sample which is closer to a desired observation target is opposed to a focused ion beam column; setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a thin film portion including the observation target and having a thickness direction substantially parallel to a thickness direction of the thin sample, to a region of the first side surface that is adjacent to the thin film portion; and performing the etching processing to a portion of the thin sample extending from the first side surface thereof to a front surface thereof by irradiating the processing region with the focused ion beam from the focused ion beam column.

Abstract translation: 一种TEM样品制备方法，包括：将薄样品放置在样品保持器上，使得更靠近所需观察目标的薄样品的第一侧表面与聚焦离子束柱相对; 设置要通过聚焦离子束进行蚀刻处理的处理区域，以形成包括观察对象的薄膜部分，并且具有基本上平行于薄样品的厚度方向的厚度方向到 与薄膜部分相邻的第一侧表面; 并且通过用来自聚焦离子束柱的聚焦离子束照射处理区域，对从其第一侧表面延伸到其前表面的薄样品的一部分进行蚀刻处理。

公开(公告)号：US20140291512A1

公开(公告)日：2014-10-02

申请号：US14221611

申请日：2014-03-21

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Ikuko NAKATANI ,  Makoto SATO

IPC: G01N23/225

CPC classification number: G01N23/2258 ,  G01N1/32 ,  G01N23/2251 ,  H01J37/3045 ,  H01J37/3056 ,  H01J2237/31745

Abstract: A focused ion beam apparatus includes: an image generation unit which generates a sample image including location detection marks formed on a sample based on secondary charged particles generated with emission of a focused ion beam to a sample; a display unit which displays a sample image; and a control unit which, in a case of performing working by emitting the focused ion beam to a working region beyond a display range, moves a sample stage, detects locations of the location detection marks included in the sample image after the movement of the sample stage as reference marks from the location detection marks included in the sample image before moving the sample stage, and controls an emission location of the focused ion beam based on the reference marks detected in the sample image after being moved.

Abstract translation: 聚焦离子束装置包括：图像生成单元，其基于通过发射聚焦离子束而产生的二次带电粒子产生包含在样本上形成的位置检测标记的样本图像; 显示单元，其显示样本图像; 以及控制单元，在通过将聚焦离子束发射到超过显示范围的工作区域进行工作的情况下，移动样品台，检测样品移动后样品图像中包含的位置检测标记的位置 在移动样品台之前，将样本图像中包含的位置检测标记作为参考标记，并且基于移动后的样本图像中检测到的参考标记来控制聚焦离子束的发射位置。

公开(公告)号：US20130251914A1

公开(公告)日：2013-09-26

申请号：US13842184

申请日：2013-03-15

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Xin MAN ,  Ikuko NAKATANI

IPC: C23C16/48

CPC classification number: C23C16/486 ,  C23C16/047 ,  H01J37/3056 ,  H01J2237/31745

Abstract: Provided is a sample preparation method, including: processing a sample by an ion beam, thereby forming a thin film portion having a thickness that allows an electron beam to transmit therethrough; supplying deposition gas to the thin film portion; and irradiating the thin film portion with the electron beam, thereby forming a deposition film on a front surface of the thin film portion and a deposition film on a rear surface of the thin film portion opposed to the front surface.

Abstract translation: 提供了一种样品制备方法，包括：通过离子束处理样品，从而形成具有允许电子束透射的厚度的薄膜部分; 向薄膜部分供应沉积气体; 并用电子束照射薄膜部分，从而在薄膜部分的前表面上形成沉积膜，并在薄膜部分的与前表面相对的后表面上形成沉积膜。

公开(公告)号：US20200300736A1

公开(公告)日：2020-09-24

申请号：US16646911

申请日：2019-02-28

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Ikuko NAKATANI

IPC: G01N1/32 ,  H01J37/317

Abstract: A thin-sample-piece fabricating device is provided with a focused-ion-beam irradiation optical system, a stage, a stage driving mechanism, and a computer. The focused-ion-beam irradiation optical system performs irradiation with a focused ion beam (FIB). The stage holds a sample piece (Q). The stage driving mechanism drives the stage. The computer sets a thin-piece forming region serving as a treatment region, as well as a peripheral section surrounding the entire periphery of the thin-piece forming region, on the sample piece (Q). The computer causes irradiation with the focused ion beam (FIB) from a direction crossing the irradiated face of the sample piece (Q) so as to perform etching treatment such that the thickness of the thin-piece forming region becomes less than the thickness of the peripheral section.

公开(公告)号：US20200266031A1

公开(公告)日：2020-08-20

申请号：US16790450

申请日：2020-02-13

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Masato SUZUKI ,  Ikuko NAKATANI ,  Satoshi TOMIMATSU ,  Makoto SATO

IPC: H01J37/30

Abstract: Provided are a thin film sample creation method and a charged particle beam apparatus capable of preventing a thin film sample piece from being damaged. The method includes a process of processing a sample by irradiating a surface of the sample with a focused ion beam (FIB) from a second direction that crosses a normal line to the surface of the sample to create a thin film sample piece and a connection portion positioned at and connected to one side of the thin film sample piece, a process of rotating the sample around the normal line, a process of connecting the thin film sample piece to a needle for holding the thin film sample piece, and a process of separating the thin film sample piece from the sample by irradiating the connection portion with a focused ion beam from a third direction that crosses the normal line.