公开(公告)号：US20170090018A1

公开(公告)日：2017-03-30

申请号：US15124045

申请日：2015-03-13

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Bernhard Buettgen ,  Miguel Bruno Vaello Paños ,  Stephan Beer ,  Michael Lehmann ,  Daniel Pérez Calero ,  Sophie Godé ,  Bassam Hallal

IPC: G01S7/481 ,  G01S17/89

CPC classification number: G01S7/4813 ,  G01J1/0214 ,  G01J1/0422 ,  G01J2001/4247 ,  G01S7/4915 ,  G01S7/4918 ,  G01S7/497 ,  G01S17/89

Abstract: The present disclosure describes optical imaging and optical detection modules that include sensors such as time-of-flight (TOF) sensors. Various implementations are described that, in some instances, can help reduce the amount of optical cross-talk between active detection pixels and reference pixels and/or can facilitate the ability of the sensor to determine an accurate phase difference to be used, for example, in distance calculations.

公开(公告)号：US20170153107A1

公开(公告)日：2017-06-01

申请号：US15363120

申请日：2016-11-29

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Stephan Beer ,  Markus Rossi ,  Bernhard Buettgen

IPC: G01B11/14 ,  H05B37/02

CPC classification number: H05B37/0281 ,  G03B15/03 ,  H04N5/2256 ,  H04N5/23232 ,  H04N5/2354 ,  H05B37/0218 ,  Y02B20/46

Abstract: This disclosure describes optoelectronic devices that include an event-driven photo-array and methods for using the same. The methods include capturing output signals over a particular illumination time via a change-detection circuit. In some instances, a threshold intensity change can trigger the change-detection circuit. In some instances, an active illumination from an illumination module may produce the threshold intensity change. Output signals may be used to generate distance data. In some instances, the output signals may be substantially free from noise due to background light.

公开(公告)号：US20180284273A1

公开(公告)日：2018-10-04

申请号：US15764358

申请日：2016-09-26

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Bernhard Buettgen ,  Gözen Köklü ,  Daniel Furrer ,  Stephan Beer ,  Miguel Bruno Vaello Paños

IPC: G01S17/08 ,  G01J3/28 ,  G01J3/02 ,  G01S17/89 ,  H04N5/33 ,  G06T7/514

CPC classification number: G01S17/08 ,  G01B11/00 ,  G01C3/08 ,  G01J3/0208 ,  G01J3/0213 ,  G01J3/0216 ,  G01J3/0229 ,  G01J3/2803 ,  G01J3/2823 ,  G01J3/36 ,  G01J2003/2806 ,  G01S17/89 ,  G06T7/514 ,  G06T2207/10024 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14825 ,  H04N5/332

Abstract: An optoelectronic module operable to acquire distance data and spectral data includes an array of demodulation pixels and an array of spectral filters. The demodulation pixels can possess an intrinsic wavelength-dependent sensitivity, wherein the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing micro-lens array in some cases. In some cases, the intrinsic wavelength-dependent sensitivity can be offset by a combined filter array, while in other cases the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing filter array. Still in other cases, the demodulation pixels can be operable in such as to offset the intrinsic wavelength-dependent sensitivity.

公开(公告)号：US20170222076A1

公开(公告)日：2017-08-03

申请号：US15419273

申请日：2017-01-30

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Daniel Furrer ,  Stephan Beer ,  Bernhard Buettgen

IPC: H01L31/0352 ,  H01L31/0224 ,  G01V8/10 ,  G01S17/08 ,  G01S7/481 ,  H01L27/144 ,  H01L31/16

CPC classification number: H01L31/035218 ,  G01S7/4816 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/36 ,  G01S17/89 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/022408 ,  H01L31/165

Abstract: The present disclosure describes quantum dot film based demodulation structures and optical ranging systems including an array of QDF demodulation structures.

公开(公告)号：US10236400B2

公开(公告)日：2019-03-19

申请号：US15419273

申请日：2017-01-30

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Daniel Furrer ,  Stephan Beer ,  Bernhard Buettgen

IPC: H01L31/00 ,  H01L31/0352 ,  H01L27/144 ,  H01L31/0224 ,  H01L31/16 ,  G01S7/481 ,  G01S17/36 ,  G01S17/89 ,  G01S7/491

Abstract: The present disclosure describes quantum dot film based demodulation structures and optical ranging systems including an array of QDF demodulation structures.

公开(公告)号：US20170038459A1

公开(公告)日：2017-02-09

申请号：US15124231

申请日：2015-03-13

Applicant: HEPTAGON MICRO OPTICS PTE. LTD.

Inventor： Jens Kubacki ,  Jim Lewis ,  Miguel Bruno Vaello Paños ,  Michael Lehmann ,  Stephan Beer ,  Bernhard Buettgen ,  Daniel Pérez Calero ,  Bassam Hallal

IPC: G01S7/497 ,  G01S17/36 ,  G01S17/89 ,  G01S7/481

Abstract: Optoelectronic modules (100) are operable to distinguish between signals indicative of reflections from an object of interest and signals indicative of a spurious reflection. Various modules are operable to recognize spurious reflections by means of dedicated spurious-reflection detection pixels (126) and, in some cases, also to compensate for errors caused by spurious reflections.

Abstract translation: 光电模块（100）可操作以区分表示来自感兴趣对象的反射的信号和指示虚假反射的信号。 各种模块可操作以通过专用寄生反射检测像素（126）识别寄生反射，并且在一些情况下也可以补偿由虚假反射引起的误差。

公开(公告)号：US20170338274A1

公开(公告)日：2017-11-23

申请号：US15596136

申请日：2017-05-16

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Radoslaw Marcin Gancarz ,  Daniel Furrer ,  Miguel Bruno Vaello Paños ,  Stephan Beer

IPC: H01L27/148 ,  H01L27/146 ,  H04N13/02

CPC classification number: H01L27/14831 ,  G01S7/4863 ,  G01S7/4915 ,  G01S17/89 ,  H01L27/14616 ,  H01L27/14623 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N13/207 ,  H04N13/254 ,  H04N13/271

Abstract: An imaging device, including a monolithic semiconductor integrated circuit substrate, comprises a focal plane array of pixel cells. Each one of the pixel cells includes a gate overlying a region of the substrate operable to convert incident radiation into charge carriers. The pixel also includes a CMOS readout circuit including at least one output transistor in the substrate. The pixel further includes a charge coupled device section on the substrate adjacent the gate, the charge coupled device section including a sense node to receive charge carriers transferred from the region of the substrate beneath the gate. The sense node is coupled to the output transistor. The pixel also includes a reset switch coupled to the sense node. The pixel's charge coupled device section has a buried channel region. The pixel also includes one or more bias enabling switches operable to enable a bias voltage to be applied to the gate. At least one of the reset switch or the one or more bias enabling switches is formed in the buried channel region.