公开(公告)号：US20180284273A1

公开(公告)日：2018-10-04

申请号：US15764358

申请日：2016-09-26

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Bernhard Buettgen ,  Gözen Köklü ,  Daniel Furrer ,  Stephan Beer ,  Miguel Bruno Vaello Paños

IPC: G01S17/08 ,  G01J3/28 ,  G01J3/02 ,  G01S17/89 ,  H04N5/33 ,  G06T7/514

CPC classification number: G01S17/08 ,  G01B11/00 ,  G01C3/08 ,  G01J3/0208 ,  G01J3/0213 ,  G01J3/0216 ,  G01J3/0229 ,  G01J3/2803 ,  G01J3/2823 ,  G01J3/36 ,  G01J2003/2806 ,  G01S17/89 ,  G06T7/514 ,  G06T2207/10024 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14825 ,  H04N5/332

Abstract: An optoelectronic module operable to acquire distance data and spectral data includes an array of demodulation pixels and an array of spectral filters. The demodulation pixels can possess an intrinsic wavelength-dependent sensitivity, wherein the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing micro-lens array in some cases. In some cases, the intrinsic wavelength-dependent sensitivity can be offset by a combined filter array, while in other cases the intrinsic wavelength-dependent sensitivity can be offset by an intensity balancing filter array. Still in other cases, the demodulation pixels can be operable in such as to offset the intrinsic wavelength-dependent sensitivity.

公开(公告)号：US20200066771A1

公开(公告)日：2020-02-27

申请号：US15769867

申请日：2016-10-21

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Gözen Köklü ,  Bernhard Buettgen

IPC: H01L27/146 ,  H01L31/12

Abstract: Pixel devices and arrays of pixel devices are operable to demodulate modulated light incident on a photo-detection region of the pixel devices. The pixel devices can include floating diffusion implant layers and transfer gates. The floating diffusion implant layers and transfer gates are disposed such that photo-generated charge carriers can be conducted to the floating diffusion implant layers over minimal charge-carrier transport paths.

公开(公告)号：US20190027516A1

公开(公告)日：2019-01-24

申请号：US16069986

申请日：2017-01-16

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Bernhard Buettgen ,  Gözen Köklü ,  Theodor Walter Loeliger

IPC: H01L27/146

Abstract: A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, an implant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate.