公开(公告)号：US20210134862A1

公开(公告)日：2021-05-06

申请号：US16316652

申请日：2017-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L27/146 ,  H01L31/107

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side.

公开(公告)号：US20180069145A1

公开(公告)日：2018-03-08

申请号：US15561992

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Noburo HOSOKAWA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L31/107 ,  H01L21/3205 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/00 ,  H01L24/02 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351

Abstract: In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

公开(公告)号：US20210193707A1

公开(公告)日：2021-06-24

申请号：US17053647

申请日：2019-04-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Takashi BABA ,  Masanori OKADA ,  Terumasa NAGANO

IPC: H01L27/146 ,  H04N5/359

Abstract: A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

公开(公告)号：US20200227464A1

公开(公告)日：2020-07-16

申请号：US16834121

申请日：2020-03-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Noboru HOSOKAWA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

公开(公告)号：US20190172965A1

公开(公告)日：2019-06-06

申请号：US16323810

申请日：2017-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Takashi BABA ,  Terumasa NAGANO ,  Noburo HOSOKAWA

IPC: H01L31/107 ,  H01L27/144 ,  H01L27/146 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate including a first principal surface and a second principal surface that oppose each other and a plurality of through-electrodes penetrating through the semiconductor substrate in a thickness direction. The semiconductor substrate includes a plurality of avalanche photodiodes arranged to operate in Geiger mode. The plurality of through-electrodes are electrically connected to the corresponding avalanche photodiodes. The semiconductor substrate includes a first area in which the plurality of avalanche photodiodes are distributed in at least a first direction and a second area in which the plurality of through-electrodes are distributed two-dimensionally. The first area and the second area are distributed in a second direction orthogonal to a first direction when viewed from a direction orthogonal to the first principal surface.