公开(公告)号：US20210193707A1

公开(公告)日：2021-06-24

申请号：US17053647

申请日：2019-04-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Takashi BABA ,  Masanori OKADA ,  Terumasa NAGANO

IPC: H01L27/146 ,  H04N5/359

Abstract: A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

公开(公告)号：US20240393172A1

公开(公告)日：2024-11-28

申请号：US18691084

申请日：2022-09-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya IWASHINA ,  Terumasa NAGANO ,  Masanori OKADA ,  Shunsuke ADACHI ,  Takuya FUJITA

IPC: G01J1/44 ,  G01S7/481 ,  G01S17/08

Abstract: In a light detection device, each pixel includes a plurality of APDs. Each APD forms a light receiving region and is configured to operate in a Geiger mode. The plurality of APDs forms a plurality of light receiving regions arranged in a direction along a main surface in a pixel area α occupied by a corresponding pixel among a plurality of pixels. The MOS switch circuit region overlaps with the plurality of light receiving regions when viewed from a Z-axis direction. When viewed from the Z-axis direction, the area of the MOS switch circuit region is greater than the area of one light receiving region formed in the pixel area, and less than or equal to the area of the pixel area. A plurality of APDs included in each pixel is electrically connected in parallel to each other and each is connected to a MOS switch circuit.

公开(公告)号：US20240387754A1

公开(公告)日：2024-11-21

申请号：US18691119

申请日：2022-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya IWASHINA ,  Terumasa NAGANO ,  Masanori OKADA ,  Shunsuke ADACHI ,  Takuya FUJITA

IPC: H01L31/02 ,  H01L31/107

Abstract: In a light detection device, switches are connected in parallel to each other. Each of the switches is connected to an APD. A read line electrically connects the switch and a signal processor to each other. The switch is configured such that a second terminal is connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in a conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in the conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage less than a breakdown voltage is applied to the APD in the conductive state.