公开(公告)号：US11417759B2

公开(公告)日：2022-08-16

申请号：US16433809

申请日：2019-06-06

申请人： General Electric Company

发明人： Stephen Daley Arthur ,  Joseph Darryl Michael ,  Tammy Lynn Johnson ,  David Alan Lilienfeld ,  Kevin Sean Matocha ,  Jody Alan Fronheiser ,  William Gregg Hawkins

IPC分类号： H01L29/78 ,  H01L21/04 ,  H01L29/45 ,  H01L29/16 ,  H01L29/49 ,  H01L29/739 ,  H01L29/745 ,  H01L23/04 ,  H01L21/50

摘要： According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.