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公开(公告)号：US12002869B2
公开(公告)日：2024-06-04
申请号：US17901887
申请日：2022-09-02
发明人： Ruilong Xie , Youngtag Woo , Daniel Chanemougame , Bipul C. Paul , Lars W. Liebmann , Heimanu Niebojewski , Xuelian Zhu , Lei Sun , Hui Zang
IPC分类号： H01L29/49 , H01L21/28 , H01L21/8234 , H01L27/088 , H01L27/092 , H01L29/417 , H01L29/66 , H01L29/78
CPC分类号： H01L29/4975 , H01L21/28 , H01L21/823431 , H01L21/823475 , H01L27/0886 , H01L27/092 , H01L29/41775 , H01L29/66477 , H01L29/783
摘要： One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.
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公开(公告)号：US20220416054A1
公开(公告)日：2022-12-29
申请号：US17901887
申请日：2022-09-02
发明人： Ruilong Xie , Youngtag Woo , Daniel Chanemougame , Bipul C. Paul , Lars W. Liebmann , Heimanu Niebojewski , Xuelian Zhu , Lei Sun , Hui Zang
IPC分类号： H01L29/49 , H01L21/8234 , H01L29/417 , H01L29/66 , H01L29/78 , H01L21/28 , H01L27/088 , H01L27/092
摘要： One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.
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公开(公告)号：US11469309B2
公开(公告)日：2022-10-11
申请号：US16804264
申请日：2020-02-28
发明人： Ruilong Xie , Youngtag Woo , Daniel Chanemougame , Bipul C. Paul , Lars W. Liebmann , Heimanu Niebojewski , Xuelian Zhu , Lei Sun , Hui Zang
IPC分类号： H01L29/49 , H01L27/092 , H01L29/78 , H01L21/28 , H01L29/66 , H01L29/417 , H01L21/8234 , H01L27/088
摘要： One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.
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公开(公告)号：US11621333B2
公开(公告)日：2023-04-04
申请号：US16555734
申请日：2019-08-29
发明人： Ruilong Xie , Hao Tang , Cheng Chi , Daniel Chanemougame , Lars W. Liebmann , Mark V. Raymond
IPC分类号： H01L29/417 , H01L21/768 , H01L29/66 , H01L21/285 , H01L23/535 , H01L29/78 , H01L29/45 , H01L27/092 , H01L29/08 , H01L21/8238
摘要： One illustrative transistor device disclosed herein includes, among other things, a gate positioned above a semiconductor substrate, the gate comprising a gate structure, a conductive source/drain metallization structure positioned adjacent the gate, the conductive source/drain metallization structure having a front face, and an insulating spacer that is positioned on and in contact with at least a portion of the front face of the conductive source/drain metallization structure. In this example, the device also includes a gate contact opening that exposes at least a portion of the insulating spacer and a portion of an upper surface of the gate structure and a conductive gate contact structure positioned in the gate contact opening, wherein the conductive gate contact structure contacts at least a portion of the insulating spacer and wherein the conductive gate contact structure is conductively coupled to the gate structure.
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公开(公告)号：US11309210B2
公开(公告)日：2022-04-19
申请号：US16568902
申请日：2019-09-12
IPC分类号： H01L27/108 , H01L27/088 , H01L27/092 , H01L21/74 , H01L23/528 , H01L23/535 , H01L21/8234
摘要： The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.
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公开(公告)号：US11043418B2
公开(公告)日：2021-06-22
申请号：US16685648
申请日：2019-11-15
IPC分类号： H01L21/768 , H01L23/528 , H01L23/522
摘要： The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain contact in electrical connection with the source/drain regions, respectively; and a contact structure with a re-entrant profile in electrical connection with the source/drain contact and the metallization of the at least one gate structure, respectively.
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