公开(公告)号：US12002869B2

公开(公告)日：2024-06-04

申请号：US17901887

申请日：2022-09-02

申请人： GlobalFoundries U.S. Inc.

发明人： Ruilong Xie ,  Youngtag Woo ,  Daniel Chanemougame ,  Bipul C. Paul ,  Lars W. Liebmann ,  Heimanu Niebojewski ,  Xuelian Zhu ,  Lei Sun ,  Hui Zang

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/092 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/4975 ,  H01L21/28 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0886 ,  H01L27/092 ,  H01L29/41775 ,  H01L29/66477 ,  H01L29/783

摘要： One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.

公开(公告)号：US20220416054A1

公开(公告)日：2022-12-29

申请号：US17901887

申请日：2022-09-02

申请人： GlobalFoundries U.S. Inc.

发明人： Ruilong Xie ,  Youngtag Woo ,  Daniel Chanemougame ,  Bipul C. Paul ,  Lars W. Liebmann ,  Heimanu Niebojewski ,  Xuelian Zhu ,  Lei Sun ,  Hui Zang

IPC分类号： H01L29/49 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L27/088 ,  H01L27/092

摘要： One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.

公开(公告)号：US11469309B2

公开(公告)日：2022-10-11

申请号：US16804264

申请日：2020-02-28

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Ruilong Xie ,  Youngtag Woo ,  Daniel Chanemougame ,  Bipul C. Paul ,  Lars W. Liebmann ,  Heimanu Niebojewski ,  Xuelian Zhu ,  Lei Sun ,  Hui Zang

IPC分类号： H01L29/49 ,  H01L27/092 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66 ,  H01L29/417 ,  H01L21/8234 ,  H01L27/088

摘要： One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.