公开(公告)号：US20160093630A1

公开(公告)日：2016-03-31

申请号：US14964907

申请日：2015-12-10

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Shyue Seng (Jason) TAN ,  Eng Huat TOH ,  Elgin QUEK

IPC分类号： H01L27/115 ,  G11C16/26 ,  H01L29/78 ,  H01L29/423 ,  H01L29/788 ,  G11C16/14 ,  G11C16/04

CPC分类号： H01L27/11521 ,  G11C16/0408 ,  G11C16/0425 ,  G11C16/14 ,  G11C16/26 ,  H01L29/40114 ,  H01L29/42328 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/7851 ,  H01L29/7881

摘要： A split gate memory cell is fabricated with a fin structure between a memory gate stack and a select gate. Embodiments include a first channel region under the memory gate stack and a second channel region under the select gate.

公开(公告)号：US20160268387A1

公开(公告)日：2016-09-15

申请号：US14643558

申请日：2015-03-10

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Eng Huat TOH ,  Shyue Seng (Jason) TAN

IPC分类号： H01L29/423 ,  H01L29/10 ,  H01L29/788

CPC分类号： H01L29/42328 ,  H01L29/1033 ,  H01L29/42336 ,  H01L29/42344 ,  H01L29/42352

摘要： A split gate memory cell is fabricated with a word gate extending below an upper surface of a substrate having the channel region. An embodiment includes providing a band engineered channel with the word gate extending there through. Another embodiment includes forming a buried channel with the word gate extending below the buried channel.