- 专利标题： SPLIT-GATE FLASH MEMORY WITH IMPROVED PROGRAM EFFICIENCY
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申请号： US14643558申请日： 2015-03-10
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公开(公告)号： US20160268387A1公开(公告)日： 2016-09-15
- 发明人: Eng Huat TOH , Shyue Seng (Jason) TAN
- 申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/10 ; H01L29/788
摘要：
A split gate memory cell is fabricated with a word gate extending below an upper surface of a substrate having the channel region. An embodiment includes providing a band engineered channel with the word gate extending there through. Another embodiment includes forming a buried channel with the word gate extending below the buried channel.
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