公开(公告)号：US20160163824A1

公开(公告)日：2016-06-09

申请号：US14560054

申请日：2014-12-04

申请人： GLOBALFOUNDRIES, Inc.

发明人： Dong-Woon Shin ,  Min-Hwa Chi ,  Xusheng Wu

IPC分类号： H01L29/66 ,  H01L21/3105 ,  H01L29/78 ,  H01L21/02

CPC分类号： H01L29/66545 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66553 ,  H01L29/66636 ,  H01L29/7848

摘要： Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming sidewall spacer structures laterally adjacent to a dummy gate structure that overlies a semiconductor substrate. Additional sidewall spacer structures are formed laterally adjacent to the sidewall spacer structures and under lower portions of the sidewall spacer structures. The dummy gate structure is replaced with a replacement gate structure.

摘要翻译： 提供了用于制造集成电路的集成电路和方法。 在一个实例中，一种用于制造集成电路的方法包括在与半导体衬底上的虚拟栅极结构相邻的侧壁上形成侧壁间隔结构。 另外的侧壁间隔结构横向邻近侧壁间隔结构形成，并在侧壁间隔结构的下部形成。 虚拟栅极结构被替换为栅极结构。

公开(公告)号：US09761691B2

公开(公告)日：2017-09-12

申请号：US14560054

申请日：2014-12-04

申请人： GLOBALFOUNDRIES, Inc.

发明人： Dong-Woon Shin ,  Min-Hwa Chi ,  Xusheng Wu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L29/66545 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66553 ,  H01L29/66636 ,  H01L29/7848

摘要： Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming sidewall spacer structures laterally adjacent to a dummy gate structure that overlies a semiconductor substrate. Additional sidewall spacer structures are formed laterally adjacent to the sidewall spacer structures and under lower portions of the sidewall spacer structures. The dummy gate structure is replaced with a replacement gate structure.