Invention Grant
- Patent Title: Integrated circuits including replacement gate structures and methods for fabricating the same
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Application No.: US14560054Application Date: 2014-12-04
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Publication No.: US09761691B2Publication Date: 2017-09-12
- Inventor: Dong-Woon Shin , Min-Hwa Chi , Xusheng Wu
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/49 ; H01L29/51

Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming sidewall spacer structures laterally adjacent to a dummy gate structure that overlies a semiconductor substrate. Additional sidewall spacer structures are formed laterally adjacent to the sidewall spacer structures and under lower portions of the sidewall spacer structures. The dummy gate structure is replaced with a replacement gate structure.
Public/Granted literature
- US20160163824A1 INTEGRATED CIRCUITS INCLUDING REPLACEMENT GATE STRUCTURES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2016-06-09
Information query
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