公开(公告)号：US06413583B1

公开(公告)日：2002-07-02

申请号：US09338470

申请日：1999-06-22

申请人： Farhad K. Moghadam ,  David W. Cheung ,  Ellie Yieh ,  Li-Qun Xia ,  Wai-Fan Yau ,  Chi-I Lang ,  Shin-Puu Jeng ,  Frederic Gaillard ,  Shankar Venkataraman ,  Srinivas Nemani

发明人： Farhad K. Moghadam ,  David W. Cheung ,  Ellie Yieh ,  Li-Qun Xia ,  Wai-Fan Yau ,  Chi-I Lang ,  Shin-Puu Jeng ,  Frederic Gaillard ,  Shankar Venkataraman ,  Srinivas Nemani

IPC分类号： C23C1640

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31053 ,  H01L21/3122 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76828 ,  H01L21/76834

摘要： A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40° C. onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.

摘要翻译： 一种通过在低于约400℃的衬底温度下通过有机硅化合物和羟基形成化合物的反应沉积低介电常数的氧化硅层的方法。低介电常数膜含有残余碳并可用于间隙填充层， 预金属介电层，金属间介电层和亚微米器件中的浅沟槽隔离电介质层。 羟基化合物可以在从水或有机化合物沉积之前制备。 氧化硅层优选在低于约40℃的衬底温度下沉积到由有机硅化合物制备的衬里层上，以提供介电常数小于约3.0的间隙填充层。

公开(公告)号：US07074708B2

公开(公告)日：2006-07-11

申请号：US10789209

申请日：2004-02-27

申请人： Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

发明人： Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76828

摘要： A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.

摘要翻译： 一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积含有硅，氧和碳的电介质层，其中所述电介质层的碳含量至少为原子量的1％，介电常数小于约 并且在电介质层上沉积含硅和碳的层。 通过使烷基硅烷在相对惰性气体的等离子体中反应而进一步沉积非晶质氢化碳化硅层，沉积了具有三个或更多个甲基的有机硅化合物沉积的电介质层的介电常数显着降低。

公开(公告)号：US06784119B2

公开(公告)日：2004-08-31

申请号：US10632179

申请日：2003-07-31

申请人： Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

发明人： Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

IPC分类号： H01L2131

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76828

摘要： A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.

公开(公告)号：US06627532B1

公开(公告)日：2003-09-30

申请号：US09679843

申请日：2000-10-05

申请人： Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

发明人： Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76828

摘要： A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.

摘要翻译： 一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积包括硅，氧和碳的电介质层，其中介电层具有至少1％原子量的碳含量和小于约 并且在电介质层上沉积含硅和碳的层。 通过使烷基硅烷在相对惰性气体的等离子体中反应而进一步沉积非晶质氢化碳化硅层，沉积了具有三个或更多个甲基的有机硅化合物沉积的电介质层的介电常数显着降低。

公开(公告)号：US06709715B1

公开(公告)日：2004-03-23

申请号：US09336368

申请日：1999-06-17

申请人： Chi-I Lang ,  Shin-Puu Jeng ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  David W. Cheung

发明人： Chi-I Lang ,  Shin-Puu Jeng ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  David W. Cheung

IPC分类号： H05H146

CPC分类号： H01L21/3122 ,  B05D1/62 ,  C08G61/025 ,  C08G61/12 ,  C08G2261/3424 ,  C09D4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/76801 ,  H01L21/76807 ,  C08G77/00

摘要： A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.

摘要翻译： 一种用于通过等离子体辅助共聚对苯二甲烯和具有碳 - 碳双键的共聚单体在约0W至约100W的恒定RF功率水平或约20W至约20W的脉冲RF功率水平沉积低介电常数薄膜的方法和装置 约160W。 共聚物膜的介电常数为约2.2至约2.5。 优选的共聚单体包括四乙烯基四甲基环四硅氧烷，四烯丙氧基硅烷和三乙烯基甲基硅烷。 共聚物膜包括至少1重量％的共聚单体。

公开(公告)号：US07023092B2

公开(公告)日：2006-04-04

申请号：US10835171

申请日：2004-04-29

申请人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

发明人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3 N 2和N 2 O 2的反应制备的。

公开(公告)号：US06930061B2

公开(公告)日：2005-08-16

申请号：US10648616

申请日：2003-08-26

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L2221/1031 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

摘要翻译： 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3 3，二甲基硅烷，（CH 3 3）2， 或者1,1,3,3-四甲基二硅氧烷，（CH 3 3）2 -SiH-O-SiH - （CH 3 3）2 N 2和一氧化二氮N 2 O，在约10W至约150W的恒定RF功率水平 ，或在占空比的10％至30％期间的约20W至约250W的脉冲RF功率电平。

公开(公告)号：US06770556B2

公开(公告)日：2004-08-03

申请号：US10301019

申请日：2002-11-21

申请人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

发明人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

公开(公告)号：US06660656B2

公开(公告)日：2003-12-09

申请号：US09957551

申请日：2001-09-19

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： C23C1640

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L2221/1031 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

摘要翻译： 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3，二甲基硅烷，（CH 3）2 SiH 2，1,1,3,3-四甲基 - 二硅氧烷，（CH 3）2 -SiH-O-SiH-（CH 3）2， 和一氧化二氮，N2O，在约10W至约150W的恒定RF功率水平，或占空比的10％至30％期间的约20W至约250W的脉冲RF功率水平。

公开(公告)号：US06511903B1

公开(公告)日：2003-01-28

申请号：US09465233

申请日：1999-12-16

申请人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

发明人： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。