公开(公告)号：US06784122B2

公开(公告)日：2004-08-31

申请号：US10371674

申请日：2003-02-21

申请人： Ravi Iyer

发明人： Ravi Iyer

IPC分类号： C23C1640

CPC分类号： H01L21/02164 ,  C03C17/02 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76837

摘要： A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 comprises placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.

公开(公告)号：US06689203B2

公开(公告)日：2004-02-10

申请号：US10145121

申请日：2002-05-15

申请人： Gilles Merienne

发明人： Gilles Merienne

IPC分类号： C23C1640

CPC分类号： C23C16/407

摘要： Composition containing a chlorinated organotin derivative and a polyfluoroalkenyl compound and/or a halo polyfluoroalkenyl compound useful for CVD formation of fluorine doped tin oxide coatings.

摘要翻译： 含有氯化有机锡衍生物和多氟链烯基化合物和/或可用于氟化锡氧化锡涂层的CVD形成的卤素多氟烯基化合物的组合物。

公开(公告)号：US06669990B2

公开(公告)日：2003-12-30

申请号：US09985690

申请日：2001-11-05

申请人： Yo Sep Min ,  Dae Sig Kim ,  Young Jin Cho ,  Jung Hyun Lee

发明人： Yo Sep Min ,  Dae Sig Kim ,  Young Jin Cho ,  Jung Hyun Lee

IPC分类号： C23C1640

CPC分类号： C23C16/45553 ,  C30B25/02 ,  C30B29/32

摘要： An atomic layer deposition method which comprises forming a metal oxide thin film by using, as a group IV metal precursor, a complex of a formula M(L)2 in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-4 alkyl group; and R3 is a linear or branched C1-5 alkylene group. The group IV metal precursor exhibits excellent thermal and chemical stabilities under a carrier gas atmosphere, whereas it has high reactivity with a reaction gas.

摘要翻译： 一种原子层沉积方法，其包括通过使用其中M是具有+4的电荷的IV族金属离子和L电荷的式M（L）2的式IV化合物前体，形成金属氧化物薄膜 是具有-2的电荷的三齿配体，所述配体由下式（I）表示：其中R 1和R 2各自独立地是直链或支链C 1-4烷基; 并且R 3是直链或支链C 1-5亚烷基。 IV族金属前体在载气气氛下表现出优异的热稳定性和化学稳定性，而与反应气体具有高反应性。

公开(公告)号：US06602541B1

公开(公告)日：2003-08-05

申请号：US09518516

申请日：2000-03-03

申请人： Richard J. McCurdy ,  Michel J. Soubeyrand ,  David A. Strickler

发明人： Richard J. McCurdy ,  Michel J. Soubeyrand ,  David A. Strickler

IPC分类号： C23C1640

CPC分类号： G02B1/113 ,  C03C17/3417 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/265

摘要： A process for depositing an antimony-containing coating upon a surface of a heated glass substrate includes dissolving an antimony halide in an organic solvent to form an antimony halide containing solution. This solution is then vaporized to form a gaseous antimony precursor. The gaseous antimony precursor is then directed toward and along the surface of the heated glass substrate. The antimony precursor is reacted at or near the surface to form an antimony containing coating.

摘要翻译： 将含锑涂层沉积在加热的玻璃基板的表面上的方法包括将卤化锑溶解在有机溶剂中以形成含锑化物的溶液。 然后将该溶液蒸发以形成气态锑前体。 然后将气态锑前体引向并沿着加热的玻璃基板的表面。 锑前体在表面处或附近反应形成含锑的涂层。

公开(公告)号：US06572925B2

公开(公告)日：2003-06-03

申请号：US09792683

申请日：2001-02-23

申请人： Vladimir Zubkov ,  Sheldon Aronowitz

发明人： Vladimir Zubkov ,  Sheldon Aronowitz

IPC分类号： C23C1640

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31629

摘要： A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds. In one embodiment, the process is carried out using a mild oxidizing agent. Also provided is a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure containing silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, where the dielectric material is characterized by the absence of aliphatic C—H bonds and where the dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.

摘要翻译： 提供一种通过与氧化剂反应形成低k含氟和碳的氧化硅介电材料的方法，所述氧化剂包括一种或多种包含一种或多种以不存在脂族C-H键的有机氟硅烷的硅烷。 在一个实施方案中，该方法使用温和的氧化剂进行。 还提供了一种用于集成电路结构的低介电常数含氟和含碳氧化硅电介质材料，该集成电路结构包含与氧原子键合的硅原子，与碳原子键合的硅原子和与氟原子键合的碳原子，其中电介质材料 其特征在于不存在脂族CH键，并且其中介电材料具有大于约1:3的C：Si的碳原子与硅原子的比例。

公开(公告)号：US06551665B1

公开(公告)日：2003-04-22

申请号：US08841908

申请日：1997-04-17

申请人： Ravi Iyer

发明人： Ravi Iyer

IPC分类号： C23C1640

CPC分类号： H01L21/02164 ,  C03C17/02 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/31612 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76837

摘要： A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 is disclosed. The entire method, which can be performed in a single cluster tool and even in a single chamber, begins by placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber. A “clean” silicate glass base layer that is substantially free of carbon particle impurities on an upper surface is then formed on the wafer surface in one of two ways. The first employs plasma-enhanced chemical vapor deposition using TEOS and diatomic oxygen gases as precursors to first deposit a “dirty” silicate glass base layer having carbon particle impurities imbedded on an upper surface. The dirty base layer is then transformed to a clean base layer by subjecting it to a plasma treatment, which involves flowing a mixture of a diamagnetic oxygen-containing oxidant, such as ozone or hydrogen peroxide, and diatomic oxygen gas into the chamber and striking an RF plasma at a power density setting of about 0.25 to 3.0 watts/cm2 for a period of from 30-300 seconds. It is hypothesized that the plasma treatment burns off the impurities, which are present in the PECVD-deposited base layer and which may be responsible for certain hydrophilic surface effects which repel TEOS molecules. The plasma treatment also creates a high degree of surface uniformity on the PECVD-deposited glass layer. The second way of forming a clean silicate glass base layer involves flowing hydrogen peroxide vapor and at least one gaseous compound selected from the group consisting of silane and disilane into the deposition chamber. Following the formation of the clean base layer, a subsequent glass layer is deposited over the PECVD-deposited glass layer in the same chamber or cluster tool using chemical vapor deposition and TEOS and ozone as precursor compounds.

公开(公告)号：US06485784B1

公开(公告)日：2002-11-26

申请号：US09720545

申请日：2001-01-16

申请人： Timothy J Leedham ,  Peter J Wright ,  Anthony C Jones ,  Michael J Crosbie

发明人： Timothy J Leedham ,  Peter J Wright ,  Anthony C Jones ,  Michael J Crosbie

IPC分类号： C23C1640

CPC分类号： H01L21/02197 ,  C07F9/005 ,  C23C16/40 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/31691

摘要： Metalorganic precursors for deposition of strontium tantalum and strontium niobium oxides by MOCVD techniques have the formula Sr[M(OR1)6-xLx]2 wherein x is form 1 to 6; M is Ta or Nb; R1 is a straight or branched chain alkyl group; and L is an alkoxide group.

摘要翻译： 通过MOCVD技术沉积锶钽和锶铌氧化物的金属有机前体具有式Sr [M（OR1）6-xLx] 2，其中x为1至6; M为Ta或Nb; R1是直链或支链烷基; L是烷氧基。

公开(公告)号：US06333066B1

公开(公告)日：2001-12-25

申请号：US09196762

申请日：1998-11-20

申请人： Dae-sig Kim

发明人： Dae-sig Kim

IPC分类号： C23C1640

CPC分类号： H01L28/56 ,  C23C16/0272 ,  C23C16/409 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/319

摘要： A method for forming a PZT (lead zirconate titanate: Pb(ZrxTi1−x)O3) thin film using a seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO seed layer or a PZT seed layer of a perovskite phase formed by injecting excess Pb. The PbO seed layer or the PZT seed layer of a perovskite phase facilitates creation of perovskite PZT nuclei, thereby growing small and uniform PZT grains consisting of a perovskite phase.

摘要翻译： 提供了使用种子层形成PZT（锆钛酸铅：Pb（Zr x Ti 1-x）O 3）薄膜的方法。 在形成PZT薄膜的方法中，PZT生长在通过注入过量Pb形成的钙钛矿相的PbO种子层或PZT晶种层上。 钙钛矿相的PbO种子层或PZT晶种层有助于产生钙钛矿PZT核，从而生长由钙钛矿相组成的小且均匀的PZT晶粒。

公开(公告)号：US06277436B1

公开(公告)日：2001-08-21

申请号：US09216673

申请日：1998-12-18

申请人： Gregory T. Stauf ,  Jeffrey F. Roeder ,  Thomas H. Baum

发明人： Gregory T. Stauf ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC分类号： C23C1640

CPC分类号： H01L28/55 ,  C23C16/40 ,  C23C16/4481 ,  H01L21/31691 ,  H01L27/10852

摘要： A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N2O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400° C. to about 1200° C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors.

摘要翻译： 用于沉积诸如（Ba，Sr）钛酸盐和（Zr，Sn）钛酸盐的电介质材料的液体输送MOCVD方法，其中金属源化合物溶解或悬浮在溶剂中并在约100℃的温度下闪蒸至 约300℃，并通过诸如氩气，氮气，氦气，氨等的载气进入化学气相沉积反应器，其中前体蒸气与氧气，臭氧，N 2 O等氧化性共反应气体混合 等等，以在约0.1托至约760托的化学气相沉积室压力下在约400℃至约1200℃的温度下将高介电金属氧化物膜沉积在基底上。 这种方法可以例如用于形成（Ba，Sr）钛酸盐电介质材料，其中氧化物的总金属含量的至少60原子％为钛。 本发明的高介电材料可用于形成用于例如动态随机存取存储器和高频电容器的应用的电容微电子器件结构。

公开(公告)号：US06248397B1

公开(公告)日：2001-06-19

申请号：US09185317

申请日：1998-11-03

申请人： Liang Ye

发明人： Liang Ye

IPC分类号： C23C1640

CPC分类号： C03C17/245 ,  C03C2217/213 ,  C03C2218/152 ,  C23C16/402

摘要： A method of depositing a silicon oxide coating on hot glass at a temperature below 600° C. comprising contacting the hot glass with a gaseous mixture of a source of silicon and oxygen enriched with ozone. Preferably, the hot glass in the form of a hot glass ribbon is contacted with the gaseous mixture during the float glass production process downstream of the float bath. Preferred sources of silicon are silanes, alkylsilanes, alkoxysilanes and siloxanes.

摘要翻译： 一种在低于600℃的温度下在热玻璃上沉积氧化硅涂层的方法，包括使热玻璃与硅源和富氧臭氧的气体混合物接触。 优选地，在浮法玻璃下游的浮法玻璃生产过程中，热玻璃带形式的热玻璃与气体混合物接触。 硅的优选来源是硅烷，烷基硅烷，烷氧基硅烷和硅氧烷