发明授权
US06627532B1 Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
有权
通过化学气相沉积沉积的SiOC层中降低K值的方法
- 专利标题: Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
- 专利标题(中): 通过化学气相沉积沉积的SiOC层中降低K值的方法
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申请号: US09679843申请日: 2000-10-05
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公开(公告)号: US06627532B1公开(公告)日: 2003-09-30
- 发明人: Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
- 申请人: Frederic Gaillard , Li-Qun Xia , Tian-Hoe Lim , Ellie Yieh , Wai-Fan Yau , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Lu
- 主分类号: H01L214763
- IPC分类号: H01L214763
摘要:
A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
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