专利检索 ap:("Wai-Fan Yau" OR "David Cheung" OR "Shin-Puu Jeng" OR "Kuowei Liu" OR "Yung-Cheng Yu") AND inv:"David Cheung" 第 1 页

1.

发明授权
Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond 有权
标题翻译：由介于硅 - 碳键的硅化合物制成的低介电常数膜

公开(公告)号：US07651725B2

公开(公告)日：2010-01-26

申请号：US11923037

申请日：2007-10-24

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： B05D5/12 , H01L21/4763

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

2.

发明申请
LOW DIELECTRIC CONSTANT FILM PRODUCED FROM SILICON COMPOUNDS COMPRISING SILICON-CARBON BOND 审中-公开

公开(公告)号：US20080061439A1

公开(公告)日：2008-03-13

申请号：US11877488

申请日：2007-10-23

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： H01L23/48

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

3.

发明授权
Method of depositing a low K dielectric with organo silane 有权
标题翻译：用有机硅沉积低K电介质的方法

公开(公告)号：US06730593B2

公开(公告)日：2004-05-04

申请号：US09998956

申请日：2001-11-15

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： H01L214763

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

4.

发明授权
Method of depositing a low k dielectric with organo silane 失效

公开(公告)号：US6054379A

公开(公告)日：2000-04-25

申请号：US21788

申请日：1998-02-11

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/31

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and N.sub.2 O.

5.

发明申请
LOW DIELECTRIC CONSTANT FILM PRODUCED FROM SILICON COMPOUNDS COMPRISING SILICON-CARBON BOND 审中-公开

公开(公告)号：US20080064225A1

公开(公告)日：2008-03-13

申请号：US11877483

申请日：2007-10-23

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： H01L21/469

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

6.

发明授权
Method of depositing a low K dielectric with organo silane 失效
标题翻译：用有机硅沉积低K电介质的方法

公开(公告)号：US06511909B1

公开(公告)日：2003-01-28

申请号：US09370371

申请日：1999-08-09

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： H01L214763

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

7.

发明授权
Low power method of depositing a low k dielectric with organo silane 失效
标题翻译：用有机硅沉积低k电介质的低功率方法

公开(公告)号：US6072227A

公开(公告)日：2000-06-06

申请号：US114682

申请日：1998-07-13

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L23/58

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and nitrous oxide, N.sub.2 O, at a pulsed RF power level from 50-200 W during 10-30% of the duty cycle.

摘要翻译： 一种通过有机硅烷化合物和氧化气体在20-200W的低RF功率水平下反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作衬垫或盖层相邻的其它电介质层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3和一氧化二氮N 2 O在占空比的10-30％期间以50-200W的脉冲RF功率水平反应来制备。

8.

发明申请
LOW DIELECTRIC CONSTANT FILM PRODUCED FROM SILICON COMPOUNDS COMPRISING SILICON-CARBON BOND 有权
标题翻译：由包含硅碳粘结剂的硅化合物生产的低介电常数膜

公开(公告)号：US20080044557A1

公开(公告)日：2008-02-21

申请号：US11923037

申请日：2007-10-24

申请人： WAI-FAN YAU , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： WAI-FAN YAU , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： H05K3/00

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3 N 2和N 2 O 2的反应制备的。

9.

发明授权
Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds 有权
标题翻译：由介于硅 - 碳键的硅化合物制成的低介电常数膜

公开(公告)号：US07023092B2

公开(公告)日：2006-04-04

申请号：US10835171

申请日：2004-04-29

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： H01L23/48 , H01L23/52

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3 N 2和N 2 O 2的反应制备的。

10.

发明授权
Method of depositing a low dielectric with organo silane 失效
标题翻译：用有机硅沉积低电介质的方法

公开(公告)号：US06770556B2

公开(公告)日：2004-08-03

申请号：US10301019

申请日：2002-11-21

申请人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

发明人： Wai-Fan Yau , David Cheung , Shin-Puu Jeng , Kuowei Liu , Yung-Cheng Yu

IPC分类号： H01L214763

CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76837

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

摘要翻译： 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

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