公开(公告)号：US20160079230A1

公开(公告)日：2016-03-17

申请号：US14855033

申请日：2015-09-15

Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION

Inventor： Adrian MIKOLAJCZAK ,  Tirthajyoti SARKAR

IPC: H01L27/02 ,  H01L29/423 ,  H01L49/02 ,  H01L29/78 ,  H01L29/417 ,  H01L27/06 ,  H01L29/06

CPC classification number: H01L27/0285 ,  H01L29/0688 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/7828

Abstract: In one general aspect, an apparatus can include a junction-less, gate-controlled voltage clamp device having a gate terminal coupled to a voltage reference device.

Abstract translation: 在一个一般方面，一种装置可以包括一个无连接的门控电压钳位装置，其具有耦合到电压参考装置的栅极端子。

公开(公告)号：US20150043114A1

公开(公告)日：2015-02-12

申请号：US14454435

申请日：2014-08-07

Applicant: Fairchild Semiconductor Corporation

Inventor： Tirthajyoti SARKAR ,  Adrian MIKOLAJCZAK ,  Ihsiu HO ,  Ashok CHALLA

IPC: H01L27/02 ,  H01L29/772 ,  H02H9/04 ,  H01L29/40

CPC classification number: H01L27/027 ,  H01L27/0266 ,  H01L27/0288 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/407 ,  H01L29/408 ,  H01L29/6606 ,  H01L29/66166 ,  H01L29/772 ,  H01L29/8605 ,  H01L29/861

Abstract: In one general aspect, an apparatus can include a semiconductor substrate, and a trench defined within the semiconductor substrate and having a depth aligned along a vertical axis, a length aligned along a longitudinal axis, and a width aligned along a horizontal axis. The apparatus includes a dielectric disposed within the trench, and an electrode disposed within the dielectric and insulated from the semiconductor substrate by the dielectric. The semiconductor substrate can have a portion aligned vertically and adjacent the trench, and the portion of the semiconductor substrate can have a conductivity type that is continuous along an entirety of the depth of the trench. The apparatus is biased to a normally-on state.

Abstract translation: 在一个一般方面，装置可以包括半导体衬底和限定在半导体衬底内并具有沿着垂直轴线对准的深度，沿着纵向轴线对准的长度和沿着水平轴线对齐的宽度的沟槽。 该设备包括设置在沟槽内的电介质和设置在电介质内并通过电介质与半导体衬底绝缘的电极。 半导体衬底可以具有垂直且与沟槽相邻的部分，并且半导体衬底的部分可以具有沿沟槽的整个深度连续的导电类型。 该装置被偏置到常开状态。