公开(公告)号：US20210296487A1

公开(公告)日：2021-09-23

申请号：US17158552

申请日：2021-01-26

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hiroyuki FUJISAWA ,  Akimasa KINOSHITA

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an insulating film, first electrodes, a second electrode, and trenches. The first semiconductor regions and the second semiconductor regions are periodically disposed apart from one another in a first direction in which the trenches extend in a stripe pattern.

公开(公告)号：US20220367641A1

公开(公告)日：2022-11-17

申请号：US17706801

申请日：2022-03-29

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hiroyuki FUJISAWA ,  Akimasa KINOSHITA

IPC分类号： H01L29/16 ,  H01L29/423 ,  H01L29/739

摘要： A silicon carbide semiconductor device including a silicon carbide semiconductor substrate. The silicon carbide semiconductor substrate has an active region through which a main current flows, and a termination region surrounding a periphery of the active region in a top view of the silicon carbide semiconductor device. In the top view, the active region is of a rectangular shape, which has two first sides in a direction and two second sides in a direction. The two first sides are each of a first length, and the two second sides are each of a second length, the first length being longer than the second length.

公开(公告)号：US20230207680A1

公开(公告)日：2023-06-29

申请号：US18170938

申请日：2023-02-17

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hiroyuki FUJISAWA ,  Akimasa KINOSHITA

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7808 ,  H01L29/0696 ,  H01L29/7813 ,  H01L29/1045 ,  H01L29/1608

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an insulating film, first electrodes, a second electrode, and trenches. The first semiconductor regions and the second semiconductor regions are periodically disposed apart from one another in a first direction in which the trenches extend in a stripe pattern.