公开(公告)号：US10430096B2

公开(公告)日：2019-10-01

申请号：US15882683

申请日：2018-01-29

Applicant: Huawei Technologies Co., Ltd. ,  Fudan University

Inventor： RenHua Yang ,  Junfeng Zhao ,  Wei Yang ,  Yinyin Lin

IPC: G06F3/06 ,  G06F1/3234

Abstract: A hybrid storage device includes a controller, a volatile storage unit, and a non-volatile storage unit. When the hybrid storage device is in a first working mode, the volatile storage unit is in an enabled state, and the non-volatile storage unit is in a disabled state; when the hybrid storage device is in a second working mode, the non-volatile storage unit is in an enabled state, and the volatile storage unit is in a disabled state. When the hybrid storage device runs in the first working mode, and when detecting that a running parameter of the computer meets a first switching condition, the controller enables the non-volatile storage unit, copies data in the volatile storage unit to the non-volatile storage unit, and switches the hybrid storage device to the second working mode.

公开(公告)号：US10223273B2

公开(公告)日：2019-03-05

申请号：US15638582

申请日：2017-06-30

Applicant: HUAWEI TECHNOLOGIES CO., LTD. ,  Fudan University

Inventor： RenHua Yang ,  Junfeng Zhao ,  Wei Yang ,  Yuangang Wang ,  Yinyin Lin

IPC: G06F12/02 ,  G06F12/0868 ,  G06F13/28 ,  G06F11/14 ,  G06F12/0802 ,  G06F12/109 ,  G11C11/406

Abstract: A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.

公开(公告)号：US20170300419A1

公开(公告)日：2017-10-19

申请号：US15638582

申请日：2017-06-30

Applicant: HUAWEI TECHNOLOGIES CO.,LTD. ,  Fudan University

Inventor： RenHua Yang ,  Junfeng Zhao ,  Wei Yang ,  Yuangang Wang ,  Yinyin Lin

IPC: G06F12/08 ,  G11C11/406 ,  G06F12/10 ,  G06F12/02 ,  G06F11/14

CPC classification number: G06F12/0868 ,  G06F11/14 ,  G06F12/0246 ,  G06F12/0802 ,  G06F12/109 ,  G06F13/28 ,  G11C11/40615 ,  G11C11/40622 ,  Y02D10/13 ,  Y02D10/14 ,  Y02D10/151

Abstract: A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.

公开(公告)号：US10976800B2

公开(公告)日：2021-04-13

申请号：US15882612

申请日：2018-01-29

Applicant: Huawei Technologies Co., Ltd. ,  Fudan University

Inventor： RenHua Yang ,  Junfeng Zhao ,  Wei Yang ,  Shihai Xiao ,  Yinyin Lin ,  Yi Wei

IPC: G06F1/3287 ,  G06F3/06 ,  G06F1/3228 ,  G06F1/3234 ,  G06F9/4401 ,  G06F12/0868

Abstract: An electronic device includes a processor, a volatile memory, and a non-volatile memory. The non-volatile memory stores a first operating system, and the electronic device works in a first working mode and a second working mode. When the electronic device is in the first working mode, a second operating system is run in the volatile memory. When the processor detects that the electronic device reaches a preset condition for entering the second working mode, the non-volatile memory is enabled, and non-system data in the volatile memory is moved to the non-volatile memory. The non-system data does not include the second operating system. After the movement of the non-system data is completed, the volatile memory is disabled, and the first operating system is run in the non-volatile memory, so that the electronic device enters the second working mode.

公开(公告)号：US20170018306A1

公开(公告)日：2017-01-19

申请号：US15121101

申请日：2014-09-17

Applicant: FUDAN UNIVERSITY

Inventor： Yinyin Lin ,  Ying Meng

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0066 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/79

Abstract: The invention provides a resistive random access memory and a writing operation method thereof, and pertains to the technical field of resistive random access memory (ReRAM). The resistive random access memory comprises a writing operation signal generation module which is at least used for generating electrical signal(s) hazing gradually reducing voltages as set operation signals; in a Set operation method of the writing operation method, electrical signal(s) hazing gradually reducing voltages are biased, as Set operation signals, onto a selected memory unit in the resistive random access memory. The Set operation method can improve storage performances of ReRAM in terms of endurance, data retention and high resistance/low resistance window, etc.

Abstract translation: 本发明提供一种电阻随机存取存储器及其写入操作方法，并且涉及电阻随机存取存储器（ReRAM）的技术领域。 所述电阻随机存取存储器包括一写入操作信号产生模块，该模块至少用于产生逐渐减小电压的电信号作为设置操作信号; 在写入操作方法的设置操作方法中，将电信号逐渐减小的电压作为设置操作信号偏置到电阻随机存取存储器中的选定的存储器单元上。 设置操作方法可以提高ReRAM在耐久性，数据保留性和高电阻/低电阻窗口等方面的存储性能。