公开(公告)号：US20170018306A1

公开(公告)日：2017-01-19

申请号：US15121101

申请日：2014-09-17

Applicant: FUDAN UNIVERSITY

Inventor： Yinyin Lin ,  Ying Meng

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0066 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/79

Abstract: The invention provides a resistive random access memory and a writing operation method thereof, and pertains to the technical field of resistive random access memory (ReRAM). The resistive random access memory comprises a writing operation signal generation module which is at least used for generating electrical signal(s) hazing gradually reducing voltages as set operation signals; in a Set operation method of the writing operation method, electrical signal(s) hazing gradually reducing voltages are biased, as Set operation signals, onto a selected memory unit in the resistive random access memory. The Set operation method can improve storage performances of ReRAM in terms of endurance, data retention and high resistance/low resistance window, etc.

Abstract translation: 本发明提供一种电阻随机存取存储器及其写入操作方法，并且涉及电阻随机存取存储器（ReRAM）的技术领域。 所述电阻随机存取存储器包括一写入操作信号产生模块，该模块至少用于产生逐渐减小电压的电信号作为设置操作信号; 在写入操作方法的设置操作方法中，将电信号逐渐减小的电压作为设置操作信号偏置到电阻随机存取存储器中的选定的存储器单元上。 设置操作方法可以提高ReRAM在耐久性，数据保留性和高电阻/低电阻窗口等方面的存储性能。