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公开(公告)号：US20120327537A1
公开(公告)日：2012-12-27
申请号：US13167142
申请日：2011-06-23
申请人： Eric Walter Singleton , Junjie Quan , Jae-Young Yi
发明人： Eric Walter Singleton , Junjie Quan , Jae-Young Yi
CPC分类号： G11B5/11 , C22F1/00 , G01R33/093 , G11B5/3912 , G11B5/398 , H01L43/08 , H01L43/12
摘要： An apparatus includes a sensor stack, first and second shields positioned on opposite sides of the sensor stack, and a first shield stabilization structure adjacent to the first shield and applying a bias magnetic field to the first shield. A second shield stabilization structure can be positioned adjacent to the second shield.
摘要翻译： 一种装置包括传感器堆叠，位于传感器堆叠的相对侧上的第一和第二屏蔽件以及与第一屏蔽件相邻并且向第一屏蔽件施加偏置磁场的第一屏蔽稳定结构。 第二屏蔽稳定结构可以被定位成与第二屏蔽相邻。
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公开(公告)号：US09659585B2
公开(公告)日：2017-05-23
申请号：US13993166
申请日：2011-12-15
IPC分类号： G01R33/02 , G11B5/39 , B82Y25/00 , G01R33/09 , H01F10/30 , H01L43/08 , H01L43/10 , H01F41/30 , B82Y40/00 , H01F10/32
CPC分类号： G11B5/39 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3912 , H01F10/30 , H01F10/3272 , H01F41/307 , H01L43/08 , H01L43/10
摘要： A magnetic sensor has a bottom shield layer, an upper shield layer, and a sensor stack adjacent the upper shield layer. The sensor includes a seed layer between the bottom shield layer and an antiferromagnetic layer of the sensor stack. The seed layer has a magnetic layer adjacent the sensor stack and a nonmagnetic layer adjacent the bottom shield layer.
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公开(公告)号：US20140356648A1
公开(公告)日：2014-12-04
申请号：US14463331
申请日：2014-08-19
申请人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
发明人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要翻译： 具有种子层结构的堆叠，其第一部分具有第一交叉轨道宽度和沉积在种子层结构上并且具有第二交叉轨道宽度的自由层，其中第一交叉轨道宽度大于第二交叉 曲线宽度 在一个实施方案中，种子层结构还包括反铁磁（AFM）层和合成反铁磁（SAF）层。 在一个替代实施方案中，种子层结构的交叉轨道宽度基本上等于两个永磁体的自由层的组合交叉轨道宽度和交叉轨道宽度。
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公开(公告)号：US09437224B2
公开(公告)日：2016-09-06
申请号：US14463331
申请日：2014-08-19
申请人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
发明人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要翻译： 具有种子层结构的堆叠，其第一部分具有第一交叉轨道宽度和沉积在种子层结构上并且具有第二交叉轨道宽度的自由层，其中第一交叉轨道宽度大于第二交叉 曲线宽度 在一个实施方案中，种子层结构还包括反铁磁（AFM）层和合成反铁磁（SAF）层。 在一个替代实施方案中，种子层结构的交叉轨道宽度基本上等于两个永磁体的自由层的组合交叉轨道宽度和交叉轨道宽度。
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公开(公告)号：US20130288076A1
公开(公告)日：2013-10-31
申请号：US13460058
申请日：2012-04-30
申请人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
发明人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要翻译： 具有种子层结构的堆叠，其第一部分具有第一交叉轨道宽度和沉积在种子层结构上并且具有第二交叉轨道宽度的自由层，其中第一交叉轨道宽度大于第二交叉 曲线宽度 在一个实施方案中，种子层结构还包括反铁磁（AFM）层和合成反铁磁（SAF）层。 在一个替代实施方案中，种子层结构的交叉轨道宽度基本上等于两个永磁体的自由层的组合交叉轨道宽度和交叉轨道宽度。
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公开(公告)号：US08822046B2
公开(公告)日：2014-09-02
申请号：US13460058
申请日：2012-04-30
申请人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
发明人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要翻译： 具有种子层结构的堆叠，其第一部分具有第一交叉轨道宽度和沉积在种子层结构上并且具有第二交叉轨道宽度的自由层，其中第一交叉轨道宽度大于第二交叉 曲线宽度 在一个实施方案中，种子层结构还包括反铁磁（AFM）层和合成反铁磁（SAF）层。 在一个替代实施方案中，种子层结构的交叉轨道宽度基本上等于两个永磁体的自由层的组合交叉轨道宽度和交叉轨道宽度。
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公开(公告)号：US20130293225A1
公开(公告)日：2013-11-07
申请号：US13993166
申请日：2011-12-15
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3912 , H01F10/30 , H01F10/3272 , H01F41/307 , H01L43/08 , H01L43/10
摘要： A magnetic sensor has a bottom shield layer, an upper shield layer, and a sensor stack adjacent the upper shield layer. The sensor includes a seed layer between the bottom shield layer and an antiferromagnetic layer of the sensor stack. The seed layer has a magnetic layer adjacent the sensor stack and a nonmagnetic layer adjacent the bottom shield layer.
摘要翻译： 磁传感器具有底屏蔽层，上屏蔽层和邻近上屏蔽层的传感器堆叠。 传感器包括在底部屏蔽层和传感器堆叠的反铁磁层之间的种子层。 种子层具有邻近传感器堆叠的磁性层和邻近底部屏蔽层的非磁性层。
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8.发明申请MAGNETIC SENSOR INCLUDING AN ELEMENT FOR GENERATING SIGNALS RELATED TO RESISTANCE CHANGES 有权磁传感器，包括用于生成与电阻变化相关的信号的元件公开(公告)号：US20100149696A1
公开(公告)日：2010-06-17
申请号：US12336216
申请日：2008-12-16
申请人： Yonghua Chen , Eric Walter Singleton , Kaizhong Gao , Mohammed Shariat Ullah Patwari , Jason Bryce Gadbois , Daniel Paul Burbank
发明人： Yonghua Chen , Eric Walter Singleton , Kaizhong Gao , Mohammed Shariat Ullah Patwari , Jason Bryce Gadbois , Daniel Paul Burbank
IPC分类号： G11B5/33
CPC分类号： G11B5/40 , G11B5/3929
摘要： A magnetic device includes first and second electrodes and a sensor stack connected to the first and second electrodes proximate a sensing surface of the magnetic sensor. A resistive element is connected to the first and second electrodes in parallel or in series with the sensor stack and adjacent the sensing surface. In some embodiments, the resistive element is configured to generate signals related to changes in its resistance. A controller to respond to the resistive element signals can also be included.
摘要翻译： 磁性装置包括第一和第二电极以及连接到第一和第二电极的传感器组件，该传感器组件靠近磁性传感器的感测表面。 电阻元件与传感器堆叠平行或串联连接到第一和第二电极并且邻近检测表面。 在一些实施例中，电阻元件被配置为产生与其电阻变化相关的信号。 还可以包括用于响应电阻元件信号的控制器。
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9.发明授权Magnetic sensor including an element for generating signals related to resistance changes 有权磁传感器包括用于产生与电阻变化有关的信号的元件公开(公告)号：US08248737B2
公开(公告)日：2012-08-21
申请号：US12336216
申请日：2008-12-16
申请人： Yonghua Chen , Eric Walter Singleton , Kaizhong Gao , Mohammed Shariat Ullah Patwari , Jason Bryce Gadbois , Daniel Paul Burbank
发明人： Yonghua Chen , Eric Walter Singleton , Kaizhong Gao , Mohammed Shariat Ullah Patwari , Jason Bryce Gadbois , Daniel Paul Burbank
IPC分类号： G11B5/33
CPC分类号： G11B5/40 , G11B5/3929
摘要： A magnetic device includes first and second electrodes and a sensor stack connected to the first and second electrodes proximate a sensing surface of the magnetic sensor. A resistive element is connected to the first and second electrodes in parallel or in series with the sensor stack and adjacent the sensing surface. In some embodiments, the resistive element is configured to generate signals related to changes in its resistance. A controller to respond to the resistive element signals can also be included.
摘要翻译： 磁性装置包括第一和第二电极以及连接到第一和第二电极的传感器组件，该传感器组件靠近磁性传感器的感测表面。 电阻元件与传感器堆叠平行或串联连接到第一和第二电极并且邻近检测表面。 在一些实施例中，电阻元件被配置为产生与其电阻变化相关的信号。 还可以包括用于响应电阻元件信号的控制器。
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公开(公告)号：US06930865B2
公开(公告)日：2005-08-16
申请号：US10348386
申请日：2003-01-21
申请人： Mai Abdelhamid Ghaly , David James Larson , Paul Edward Anderson , Kristin J. Duxstad , Brenda Anne Everitt , Patrick John Moran , Steven Barclay Slade , Eric Walter Singleton
发明人： Mai Abdelhamid Ghaly , David James Larson , Paul Edward Anderson , Kristin J. Duxstad , Brenda Anne Everitt , Patrick John Moran , Steven Barclay Slade , Eric Walter Singleton
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B2005/3996 , Y10T29/49052
摘要： A transducing head has a magnetoresistive sensor, a first bias element, and a second bias element. The magnetoresistive sensor is positioned between the first and second bias elements, and has a sensor width. The first bias element has a first length and the second bias element has a second length. The direction of the first and second lengths are substantially similar to the direction of the sensor width. The first and second lengths in the range of about one-tenth to about twenty times the sensor width.
摘要翻译： 换能头具有磁阻传感器，第一偏置元件和第二偏置元件。 磁阻传感器位于第一和第二偏置元件之间，并具有传感器宽度。 第一偏置元件具有第一长度，第二偏置元件具有第二长度。 第一和第二长度的方向基本上类似于传感器宽度的方向。 第一和第二长度在传感器宽度的约十分之一到二十倍的范围内。
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