TOUCH SCREEN PANEL AND DISPLAY INCLUDING THE SAME
    1.
    发明申请
    TOUCH SCREEN PANEL AND DISPLAY INCLUDING THE SAME 审中-公开
    触摸屏幕面板和显示包括它

    公开(公告)号:US20140327841A1

    公开(公告)日:2014-11-06

    申请号:US14176694

    申请日:2014-02-10

    CPC classification number: H01L27/323 G06F3/045

    Abstract: Provided is a touch screen panel. The touch screen panel according to an embodiment of the inventive concept includes a transparent substrate including a first region and a second region, a buffer layer disposed on the first region and second region, the buffer layer having a first transmittances, and a transparent indium tin oxide (ITO) electrode disposed on the buffer layer of the second region, the transparent ITO electrode and the buffer layer on the second region having a second transmittance, wherein a thickness of the transparent ITO electrode is 100 nm to 500 nm, and a difference between the first transmittance and the second transmittance is less than 1.5%.

    Abstract translation: 提供触摸屏面板。 根据本发明的实施例的触摸屏面板包括:透明基板,包括第一区域和第二区域,设置在第一区域和第二区域上的缓冲层,缓冲层具有第一透射率,透明铟锡 设置在第二区域的缓冲层上的氧化物(ITO)电极,透明ITO电极和第二区域上的缓冲层具有第二透射率,其中透明ITO电极的厚度为100nm至500nm, 在第一透射率和第二透射率之间小于1.5%。

    TRANSPARENT NON-VOLATILE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
    7.
    发明申请
    TRANSPARENT NON-VOLATILE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
    透明非易失性存储器件及其制造方法

    公开(公告)号:US20140061749A1

    公开(公告)日:2014-03-06

    申请号:US13717785

    申请日:2012-12-18

    Inventor: Rae-Man PARK

    Abstract: Disclosed are transparent non-volatile memory devices and methods of manufacturing the same. The method may include forming an active layer on a substrate, forming a source and a drain spaced apart from each other on the active layer, forming a gate insulating layer having quantum dots on the source, the drain, and the active layer, and forming a gate on the gate insulating layer between the source and the drain. The quantum dots and the gate insulating layer may be formed simultaneously.

    Abstract translation: 公开了透明非易失性存储器件及其制造方法。 该方法可以包括在衬底上形成有源层,在有源层上形成彼此间隔开的源极和漏极,在源极,漏极和有源层上形成具有量子点的栅极绝缘层,以及形成 源极和漏极之间的栅极绝缘层上的栅极。 量子点和栅极绝缘层可以同时形成。

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