公开(公告)号：US08647908B2

公开(公告)日：2014-02-11

申请号：US13413846

申请日：2012-03-07

申请人： Eiji Yoshikawa ,  Shinichi Izuo

发明人： Eiji Yoshikawa ,  Shinichi Izuo

IPC分类号： H01L21/62 ,  H01L29/84

CPC分类号： B81C1/00626 ,  B81B2201/0264 ,  G01L9/0048 ,  G01L9/0051

摘要： A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.

摘要翻译： 半导体压力传感器包括：在其主表面上具有凹部和对准标记的第一基板和形成在第一基板的主表面上的第二基板，具有设置成覆盖第一基板的凹部内的空间的隔膜 第一基板和设置在隔膜上的规格电阻器。 设置对准标记以从第二基板露出。 因此，可以获得半导体压力传感器及其制造方法，降低生产成本并提高压力测量精度。

公开(公告)号：US08710600B2

公开(公告)日：2014-04-29

申请号：US12949459

申请日：2010-11-18

申请人： Eiji Yoshikawa ,  Shinichi Izuo

发明人： Eiji Yoshikawa ,  Shinichi Izuo

IPC分类号： H01L29/84

CPC分类号： G01L9/0042 ,  B81B3/0078 ,  B81B2201/0264 ,  B81B2203/0127

摘要： A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided.Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion.

摘要翻译： 提供了可以提高隔膜破裂压力公差的半导体压力传感器。 包括：第一半导体衬底，其上形成有在厚度方向上在第一表面上具有开口的凹部; 第二半导体衬底，其被设置为面对第一半导体衬底的第一表面; 以及第一氧化硅膜，其被插入在所述第一半导体基板和所述第二半导体基板之间，并且在所述第一氧化硅膜上形成有在所述凹部和所述第二半导体基板之间连通的贯通孔，并且所述第一氧化硅膜的至少一部分 当从面向穿透孔的侧面和凹部的开口观察时，贯通孔位于凹部的开口边缘部的内侧。

公开(公告)号：US06790340B1

公开(公告)日：2004-09-14

申请号：US10009521

申请日：2001-12-11

申请人： Shinichi Izuo ,  Hiroshi Ohji ,  Kazuhiko Tsutsumi ,  Patrick James French

发明人： Shinichi Izuo ,  Hiroshi Ohji ,  Kazuhiko Tsutsumi ,  Patrick James French

IPC分类号： C25F300

CPC分类号： H01L21/3063 ,  C25F3/12

摘要： An electrochemical etching system has an etching bath for holding an n-type silicon substrate with a first surface of the substrate in contact with hydrofluoric acid, an electrode positioned in the hydrofluoric acid, a power source having a positive pole connected to the silicon substrate and a negative pole connected to the electrode, and an illumination unit having a light source for illumination of a second surface of the silicon substrate. The illumination unit illuminates the second surface of the silicon substrate with an illumination intensity of 10 m W/cm2 or more. A ratio of a maximum illumination to a minimum illumination of the second surface of the silicon substrate is 1.69:1 or less. With the etching system, pores and/or trenches of a certain size and shape can be formed in an entire area of the silicon substrate having a diameter of more than three inches.

摘要翻译： 电化学蚀刻系统具有用于保持n型硅衬底的蚀刻浴，其中衬底的第一表面与氢氟酸接触，位于氢氟酸中的电极，具有连接到硅衬底的正极的电源和 连接到电极的负极和具有用于照射硅衬底的第二表面的光源的照明单元。 照明单元以10mW / cm 2以上的照明强度照射硅衬底的第二表面。 硅衬底的第二表面的最大照度与最小照度的比为1.69:1或更小。 利用蚀刻系统，可以在具有大于3英寸的直径的硅衬底的整个区域中形成一定尺寸和形状的孔和/或沟槽。

公开(公告)号：US07125780B2

公开(公告)日：2006-10-24

申请号：US11354961

申请日：2006-02-16

申请人： Hajime Akiyama ,  Shinichi Izuo

发明人： Hajime Akiyama ,  Shinichi Izuo

IPC分类号： H01L21/331

CPC分类号： H01L21/76264 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/66681 ,  H01L29/7394 ,  H01L29/7455 ,  H01L29/7824 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric isolation type semiconductor device and a manufacturing method therefor achieve high dielectric resistance while preventing the dielectric strength of the semiconductor device from being limited depending on the thickness of a dielectric layer and the thickness of a first semiconductor layer. A semiconductor substrate (1) and an n− type semiconductor layer (2) are bonded to each other through a buried oxide film layer (3). A first porous oxide film area (10) is formed in the semiconductor substrate in a state contacting with the buried oxide film layer. A power device is formed on the n− type semiconductor layer. The first porous oxide film area is formed in an area including a location right under a first main electrode (6) and extending from the first main electrode side up to a range of more than 40% of a distance (L) between the first and second main electrodes (6, 7).

公开(公告)号：US20130309416A1

公开(公告)日：2013-11-21

申请号：US13981424

申请日：2011-11-21

申请人： Yoshinori Yokoyama ,  Shinichi Izuo ,  Yukihisa Yoshida ,  Takaaki Murakami

发明人： Yoshinori Yokoyama ,  Shinichi Izuo ,  Yukihisa Yoshida ,  Takaaki Murakami

IPC分类号： C23C16/50

CPC分类号： C23C16/50 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45595 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2240/10

摘要： An atmospheric pressure plasma treatment apparatus includes a moving unit configured to relatively move an atmospheric pressure plasma treatment head and member to be treated, gas supply units configured to supply a reaction gas and a curtain gas, and a control unit. When the atmospheric pressure plasma treatment head and the member are relatively moved, the control unit performs control to increase a flow rate of the reaction gas and the curtain gas from an opposite direction side of a relative moving direction of the member with respect to the atmospheric pressure plasma treatment head and reduce a flow rate of the reaction gas and the curtain gas in the relative moving direction side of the member compared with the flow rates of the reaction gas and the curtain gas flowing when the atmospheric pressure plasma treatment head and the member are not relatively moved.

摘要翻译： 大气压等离子体处理装置包括移动单元，其构造成相对移动大气压等离子体处理头和待处理构件，构造成供应反应气体和帘式气体的气体供应单元以及控制单元。 当大气压等离子体处理头和构件相对移动时，控制单元执行控制，以增加反作用气体和帘式气体相对于大气的相对移动方向的相对方向侧的流量 与当大气压等离子体处理头和构件的流体流动的反应气体和帘式气体的流量相比，降低了构件的相对移动方向侧的反应气体和帘式气体的流量， 不相对移动

公开(公告)号：US20090027138A1

公开(公告)日：2009-01-29

申请号：US11886589

申请日：2005-03-29

申请人： Tamotsu Nishino ,  Masatake Hangai ,  Yukihisa Yoshida ,  Shinichi Izuo ,  Hirokazu Taketomi ,  Tomohiro Takahashi ,  Kenichiro Kodama ,  Kazushi Nishizawa ,  Yoko Koga ,  Araki Ohno ,  Shinnosuke Soda ,  Moriyasu Miyazaki ,  Kenichi Miyaguchi

发明人： Tamotsu Nishino ,  Masatake Hangai ,  Yukihisa Yoshida ,  Shinichi Izuo ,  Hirokazu Taketomi ,  Tomohiro Takahashi ,  Kenichiro Kodama ,  Kazushi Nishizawa ,  Yoko Koga ,  Araki Ohno ,  Shinnosuke Soda ,  Moriyasu Miyazaki ,  Kenichi Miyaguchi

IPC分类号： H01P1/10

CPC分类号： H01P1/127 ,  H01P1/184 ,  H01Q7/00 ,  H01Q9/14 ,  H01Q9/16

摘要： A switch circuit including: a plurality of MEMS switches connected in parallel or in series, which have different drive voltages; and a single voltage supply for driving the plurality of MEMS switches by the plurality of drive voltages, is used for a microwave circuit or an antenna circuit, to vary a configuration of the microwave circuit or the antenna circuit based on the drive voltage value. That is, the configuration of the microwave circuit or the antenna circuit can be varied based on the drive voltage value by using the switch circuit including the MEMS switches having the different drive voltages for the microwave circuit or the antenna circuit.

摘要翻译： 一种开关电路，包括：并联或串联连接的多个MEMS开关，其具有不同的驱动电压; 并且用于通过多个驱动电压驱动多个MEMS开关的单个电压源用于微波电路或天线电路，以基于驱动电压值改变微波电路或天线电路的配置。 也就是说，微波电路或天线电路的配置可以通过使用包括具有用于微波电路或天线电路的不同驱动电压的MEMS开关的开关电路，基于驱动电压值而变化。

公开(公告)号：US20060138586A1

公开(公告)日：2006-06-29

申请号：US11354961

申请日：2006-02-16

申请人： Hajime Akiyama ,  Shinichi Izuo

发明人： Hajime Akiyama ,  Shinichi Izuo

IPC分类号： H01L29/00

CPC分类号： H01L21/76264 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/66681 ,  H01L29/7394 ,  H01L29/7455 ,  H01L29/7824 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dielectric isolation type semiconductor device and a manufacturing method therefor achieve high dielectric resistance while preventing the dielectric strength of the semiconductor device from being limited depending on the thickness of a dielectric layer and the thickness of a first semiconductor layer. A semiconductor substrate (1) and an n− type semiconductor layer (2) are bonded to each other through a buried oxide film layer (3). A first porous oxide film area (10) is formed in the semiconductor substrate in a state contacting with the buried oxide film layer. A power device is formed on the n− type semiconductor layer. The first porous oxide film area is formed in an area including a location right under a first main electrode (6) and extending from the first main electrode side up to a range of more than 40% of a distance (L) between the first and second main electrodes (6, 7).

公开(公告)号：US07786541B2

公开(公告)日：2010-08-31

申请号：US12067426

申请日：2006-08-30

申请人： Shinichi Izuo ,  Motohisa Taguchi ,  Akira Yamashita ,  Yukihisa Yoshida

发明人： Shinichi Izuo ,  Motohisa Taguchi ,  Akira Yamashita ,  Yukihisa Yoshida

IPC分类号： H01L29/84

CPC分类号： G01L9/0047 ,  G01L9/0048 ,  G01L9/0054 ,  G01L19/04

摘要： A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

摘要翻译： 半导体压力传感器包括硅支撑基板（1），形成在硅支撑基板（1）上的绝缘层（2）和形成在绝缘层（2）上的硅薄板（3）。 在硅支撑基板（1）上形成在硅支撑基板（1）的厚度方向上延伸的通孔（1a）。 位于通孔（1a）的延伸部上的硅薄板（3）用作通过外部压力变形的隔膜（23）。 绝缘层（2）保持在隔膜（23）的整个下表面上。 绝缘层（2）的厚度从隔膜（23）的周边部分向中心部分减小。 这提供了半导体压力传感器能够降低偏移电压和由温度变化引起的输出电压的变化及其制造方法。

公开(公告)号：US20090140355A1

公开(公告)日：2009-06-04

申请号：US12067426

申请日：2006-08-30

申请人： Shinichi Izuo ,  Motohisa Taguchi ,  Akira Yamashita ,  Yukihisa Yoshida

发明人： Shinichi Izuo ,  Motohisa Taguchi ,  Akira Yamashita ,  Yukihisa Yoshida

IPC分类号： H01L23/58 ,  H01L21/00

CPC分类号： G01L9/0047 ,  G01L9/0048 ,  G01L9/0054 ,  G01L19/04

摘要： A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

摘要翻译： 半导体压力传感器包括硅支撑基板（1），形成在硅支撑基板（1）上的绝缘层（2）和形成在绝缘层（2）上的硅薄板（3）。 在硅支撑基板（1）上形成在硅支撑基板（1）的厚度方向上延伸的通孔（1a）。 位于通孔（1a）的延伸部上的硅薄板（3）用作通过外部压力变形的隔膜（23）。 绝缘层（2）保持在隔膜（23）的整个下表面上。 绝缘层（2）的厚度从隔膜（23）的周边部分向中心部分减小。 这提供了半导体压力传感器能够降低偏移电压和由温度变化引起的输出电压的变化及其制造方法。

公开(公告)号：US20120168082A1

公开(公告)日：2012-07-05

申请号：US13394015

申请日：2010-07-15

申请人： Shinichi Izuo ,  Yukihisa Yoshida ,  Takaaki Murakami

发明人： Shinichi Izuo ,  Yukihisa Yoshida ,  Takaaki Murakami

IPC分类号： H01L21/3065 ,  H01J61/28 ,  C23C16/50

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/452 ,  C23C16/509 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3255 ,  H01J37/32816

摘要： A plasma generating apparatus irradiates plasma on a treatment object. The plasma is generated under gas pressure equal to or higher than 100 pascals and equal to or lower than atmospheric pressure in an inter-electrode gap between a first electrode to which a power supply is connected and a second electrode arranged to be opposed to the first electrode and grounded. The first electrode has a structure in which the first electrode is retained on a grounded conductive retaining member via a solid dielectric provided on a surface not opposed to the second electrode, and a conductive film is continuously provided on a surface in a predetermined range in contact with the conductive retaining member and a surface in a predetermined range not in contact with the conductive retaining member on a surface of the solid dielectric.

摘要翻译： 等离子体发生装置将等离子体照射在处理对象上。 在连接有电源的第一电极和布置成与第一电极相对的第二电极之间的电极间间隙中，在等于或高于100pascals且等于或低于大气压力的气体压力下产生等离子体 电极接地。 第一电极具有这样的结构，其中第一电极经由设置在不与第二电极相对的表面上的固体电介质保持在接地的导电保持构件上，并且导电膜在预定的接触范围内的表面上连续地设置 导电保持构件和在固体电介质的表面上与导电保持构件不接触的预定范围的表面。