公开(公告)号：US11094814B2

公开(公告)日：2021-08-17

申请号：US15720564

申请日：2017-09-29

申请人： EPISTAR CORPORATION

发明人： Ya-Yu Yang ,  Shang-Ju Tu ,  Tsung-Cheng Chang ,  Chia-Cheng Liu

IPC分类号： H01L29/78 ,  H01L29/778 ,  B82Y99/00 ,  H01L29/20 ,  H01L21/02 ,  H01L29/207

摘要： A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises Alx1Ga1-x1N, a material of the first functional layer comprises Alx2Ga1-x2N, 0

公开(公告)号：US09356128B2

公开(公告)日：2016-05-31

申请号：US14256733

申请日：2014-04-18

申请人： EPISTAR CORPORATION ,  HUGA OPTOTECH INC.

发明人： Heng-Kuang Lin ,  Yih-Ting Kuo ,  Tsung-Cheng Chang

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/207 ,  H01L21/02 ,  H01L21/20 ,  H01L29/66 ,  H01L29/10

CPC分类号： H01L29/778 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second grading layer formed on the first grading layer; a second semiconductor layer with a second lattice constant formed on the second grading layer; a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer; and a second interlayer formed in the second grading layer; wherein the first interlayer comprises a first superlattice including a series of Alx1Ga1-x1N/Aly1Ga1-y1N alternate layers, (x1-y1)≧0.2, and the second interlayer comprises a second superlattice including a series of Alx2Ga1-x2N/Aly2Ga1-y2N alternate layers, (x2-y2)≧0.2, wherein the average of x1 and y1 is larger than that of x2 and y2.

摘要翻译： 一种半导体功率器件，包括：衬底; 在基板上形成具有第一晶格常数的第一半导体层; 形成在所述第一半导体层上并包括第一部分的第一分级层; 形成在第一分级层上的第二分级层; 形成在所述第二分级层上的具有第二晶格常数的第二半导体层; 形成在第一分级层中并与第一分级层的第一部分相邻的第一中间层; 以及形成在所述第二分级层中的第二夹层; 其中所述第一夹层包括包括一系列Al x Ga 1-x N / Al y Ga 1-y 1 N交替层（x1-y1）≥0.2的第一超晶格，并且所述第二中间层包括第二超晶格，所述第二超晶格包括一系列Alx2Ga1-x2N / Aly2Ga1-y2N交替 （x2-y2）≥0.2，其中x1和y1的平均值大于x2和y2的平均值。

公开(公告)号：US12068410B2

公开(公告)日：2024-08-20

申请号：US17387433

申请日：2021-07-28

申请人： EPISTAR CORPORATION

发明人： Ya-Yu Yang ,  Shang-Ju Tu ,  Tsung-Cheng Chang ,  Chia-Cheng Liu

IPC分类号： H01L29/78 ,  H01L29/778 ,  B82Y99/00 ,  H01L21/02 ,  H01L29/20 ,  H01L29/207

CPC分类号： H01L29/78 ,  H01L29/7783 ,  B82Y99/00 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/207

摘要： A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0

公开(公告)号：US09263530B2

公开(公告)日：2016-02-16

申请号：US14140260

申请日：2013-12-24

申请人： EPISTAR CORPORATION ,  HUGA OPTOTECH INC.

发明人： Chih-Ching Cheng ,  Tsung-Cheng Chang

IPC分类号： H01L29/778 ,  H01L29/207 ,  H01L29/20 ,  H01L29/66 ,  H01L29/36 ,  H01L29/10

CPC分类号： H01L29/207 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786

摘要： A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.

摘要翻译： 本文公开的场效应晶体管（FET）包括衬底，设置在衬底上的C掺杂半导体层，设置在C掺杂半导体层上的沟道层和设置在沟道层上的电子供给层。 FET还包括设置在C掺杂半导体层和沟道层之间的扩散阻挡层，其中扩散阻挡层直接与沟道层接触。

公开(公告)号：US11049961B2

公开(公告)日：2021-06-29

申请号：US16453118

申请日：2019-06-26

申请人： EPISTAR CORPORATION

发明人： Shang-Ju Tu ,  Chia-Cheng Liu ,  Tsung-Cheng Chang ,  Ya-Yu Yang ,  Yu-Jiun Shen ,  Jen-Inn Chyi

IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L29/66

摘要： A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.