公开(公告)号：US12068410B2

公开(公告)日：2024-08-20

申请号：US17387433

申请日：2021-07-28

申请人： EPISTAR CORPORATION

发明人： Ya-Yu Yang ,  Shang-Ju Tu ,  Tsung-Cheng Chang ,  Chia-Cheng Liu

IPC分类号： H01L29/78 ,  H01L29/778 ,  B82Y99/00 ,  H01L21/02 ,  H01L29/20 ,  H01L29/207

CPC分类号： H01L29/78 ,  H01L29/7783 ,  B82Y99/00 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/207

摘要： A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0

公开(公告)号：US11094814B2

公开(公告)日：2021-08-17

申请号：US15720564

申请日：2017-09-29

申请人： EPISTAR CORPORATION

发明人： Ya-Yu Yang ,  Shang-Ju Tu ,  Tsung-Cheng Chang ,  Chia-Cheng Liu

IPC分类号： H01L29/78 ,  H01L29/778 ,  B82Y99/00 ,  H01L29/20 ,  H01L21/02 ,  H01L29/207

摘要： A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises Alx1Ga1-x1N, a material of the first functional layer comprises Alx2Ga1-x2N, 0

公开(公告)号：US11049961B2

公开(公告)日：2021-06-29

申请号：US16453118

申请日：2019-06-26

申请人： EPISTAR CORPORATION

发明人： Shang-Ju Tu ,  Chia-Cheng Liu ,  Tsung-Cheng Chang ,  Ya-Yu Yang ,  Yu-Jiun Shen ,  Jen-Inn Chyi

IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L29/66

摘要： A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

公开(公告)号：US10290730B1

公开(公告)日：2019-05-14

申请号：US15951184

申请日：2018-04-12

申请人： EPISTAR CORPORATION

发明人： Ya-Yu Yang ,  Yu-Jiun Shen ,  Chia-Cheng Liu

IPC分类号： H01L21/02 ,  H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66

摘要： A semiconductor power device includes an engineered aluminum-nitride substrate structure, and method of fabricating the same are described. The engineered substrate structure is effectively integrated with a transition layer of AlN/AlGaN disposed thereon, a buffer layer disposed on the transition layer having a C—(Al)GaN/u-GaN multiple stacking layered structure, a channel layer, a barrier layer, and an optional SiNx interlayer together, to form a GaN-based semiconductor power device. The GaN buffer layer is capable of achieving sufficient thickness for higher performance. The engineered substrate structure has a core region made of an aluminum nitride (AlN) substrate, a single crystal silicon layer as top material layer thereof, and bonded together with an encapsulated multi-layered structure containing adhesive layers, thin film layers and the AlN substrate. Higher breakdown voltage and improved overall device quality with respect to epitaxy-induced bow, warp, and cracking issues are achieved by the semiconductor power device.

公开(公告)号：US08932885B2

公开(公告)日：2015-01-13

申请号：US13730130

申请日：2012-12-28

申请人： Epistar Corporation

发明人： Min-Hsun Hsieh ,  Kuen-Ru Chuang ,  Shu-Wen Sung ,  Chia-Cheng Liu ,  Chao-Nien Huang ,  Shane-Shyan Wey ,  Chih-Chiang Lu ,  Ming-Jiunn Jou

IPC分类号： H01L21/00 ,  H01L33/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/30 ,  H01L33/32

CPC分类号： H01L33/16 ,  H01L21/2007 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42

摘要： A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

摘要翻译： 一种具有透明基板的发光二极管及其制造方法。 发光二极管通过产生两个半导体多层并结合而形成。 第一半导体多层形成在非透明基板上。 通过在透明基板上形成非晶界面层来形成第二半导体多层。 将两个半导体多层结合，并且去除非透明衬底，留下具有透明衬底的半导体多层。