- 专利标题： Semiconductor power device
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申请号： US17387433申请日： 2021-07-28
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公开(公告)号： US12068410B2公开(公告)日： 2024-08-20
- 发明人: Ya-Yu Yang , Shang-Ju Tu , Tsung-Cheng Chang , Chia-Cheng Liu
- 申请人： EPISTAR CORPORATION
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： DITTHAVONG, STEINER & MLOTKOWSKI
- 分案原申请号： US15720564 2017.09.29
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/778 ; B82Y99/00 ; H01L21/02 ; H01L29/20 ; H01L29/207
摘要：
A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0
公开/授权文献
- US20210359123A1 SEMICONDUCTOR POWER DEVICE 公开/授权日：2021-11-18
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