发明授权
- 专利标题： Semiconductor power device
- 专利标题（中）： 半导体功率器件
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申请号： US14256733申请日： 2014-04-18
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公开(公告)号： US09356128B2公开(公告)日： 2016-05-31
- 发明人: Heng-Kuang Lin , Yih-Ting Kuo , Tsung-Cheng Chang
- 申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： Ditthavong & Steiner, P.C.
- 优先权： TW102129615A 20130816
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20 ; H01L29/207 ; H01L21/02 ; H01L21/20 ; H01L29/66 ; H01L29/10
摘要：
A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second grading layer formed on the first grading layer; a second semiconductor layer with a second lattice constant formed on the second grading layer; a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer; and a second interlayer formed in the second grading layer; wherein the first interlayer comprises a first superlattice including a series of Alx1Ga1-x1N/Aly1Ga1-y1N alternate layers, (x1-y1)≧0.2, and the second interlayer comprises a second superlattice including a series of Alx2Ga1-x2N/Aly2Ga1-y2N alternate layers, (x2-y2)≧0.2, wherein the average of x1 and y1 is larger than that of x2 and y2.
公开/授权文献
- US20150048418A1 SEMICONDUCTOR POWER DEVICE 公开/授权日：2015-02-19
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