公开(公告)号：US11686785B2

公开(公告)日：2023-06-27

申请号：US17675109

申请日：2022-02-18

申请人： DENSO CORPORATION

发明人： Yuki Anno ,  Takayuki Shibata ,  Kazuhiro Oyama

IPC分类号： G01R33/032 ,  H01F7/20

CPC分类号： G01R33/032 ,  H01F7/20

摘要： A magnetic field generator includes: an upper layer coil composed of a first conductive material and forming a loop circuit having a coil portion; a lower layer coil composed of a second conductive material and forming a loop circuit having a coil portion arranged opposite to the coil portion of the upper layer coil at a predetermined distance; and a substrate supporting the upper layer coil and the lower layer coil and having a dielectric material between the upper layer coil and the lower layer coil. High-frequency currents of opposite phases are passed through the upper layer coil and the lower layer coil, respectively, and a length per loop of the coil portion in the upper layer coil and the coil portion in the lower layer coil is matched to one wavelength of the high-frequency current.

公开(公告)号：US20220268859A1

公开(公告)日：2022-08-25

申请号：US17675109

申请日：2022-02-18

申请人： DENSO CORPORATION

发明人： Yuki Anno ,  Takayuki Shibata ,  Kazuhiro Oyama

IPC分类号： G01R33/032 ,  H01F7/20

摘要： A magnetic field generator includes: an upper layer coil composed of a first conductive material and forming a loop circuit having a coil portion; a lower layer coil composed of a second conductive material and forming a loop circuit having a coil portion arranged opposite to the coil portion of the upper layer coil at a predetermined distance; and a substrate supporting the upper layer coil and the lower layer coil and having a dielectric material between the upper layer coil and the lower layer coil. High-frequency currents of opposite phases are passed through the upper layer coil and the lower layer coil, respectively, and a length per loop of the coil portion in the upper layer coil and the coil portion in the lower layer coil is matched to one wavelength of the high-frequency current.

公开(公告)号：US10950723B2

公开(公告)日：2021-03-16

申请号：US16068919

申请日：2016-11-17

申请人： DENSO CORPORATION

发明人： Kazuhiro Oyama

IPC分类号： H01L29/78 ,  H01L29/51 ,  H01L29/423 ,  H01L27/04 ,  H01L29/16 ,  H01L29/49 ,  H01L29/10 ,  H01L29/417

摘要： In a semiconductor device with a wide gap semiconductor, a gate insulating film is made of a material having a barrier against a minor carrier in an n-type body layer and having no barrier against a minor carrier in a p-type drift layer. As a result, in the semiconductor device with the wide gap semiconductor, a reduction in a conduction loss can be achieved while realizing an improvement in blocking resistance and securing reliability of the gate insulating film.

公开(公告)号：US11860247B2

公开(公告)日：2024-01-02

申请号：US18174140

申请日：2023-02-24

申请人： DENSO CORPORATION

发明人： Yuki Anno ,  Takayuki Shibata ,  Kazuhiro Oyama

IPC分类号： G01R33/032 ,  H01F7/20 ,  H01F27/28

CPC分类号： G01R33/032 ,  H01F7/20 ,  H01F27/28

摘要： A magnetic field generator includes: an upper layer resonance coil composed of a first conductive material and forming a loop circuit having a coil portion; a lower layer coil composed of a second conductive material and forming a loop circuit having a coil portion arranged opposite to the coil portion of the upper layer coil at a predetermined distance; and a substrate supporting the upper layer coil and the lower layer coil and having a dielectric material between the upper layer coil and the lower layer coil. A high-frequency current is supplied to the lower layer coil and a high-frequency current having a phase opposite to that of the high frequency current supplied to the lower layer coil flows through the upper layer coil. A length per loop of the coil portion in the upper layer coil and the coil portion in the lower layer coil is matched to one wavelength of the high-frequency current.

公开(公告)号：US20230221384A1

公开(公告)日：2023-07-13

申请号：US18174140

申请日：2023-02-24

申请人： DENSO CORPORATION

发明人： Yuki Anno ,  Takayuki Shibata ,  Kazuhiro Oyama

IPC分类号： H01F7/20 ,  G01R33/032 ,  H01F27/28

CPC分类号： H01F7/20 ,  G01R33/032 ,  H01F27/28

摘要： A magnetic field generator includes: an upper layer coil composed of a first conductive material and forming a loop circuit having a coil portion; a lower layer coil composed of a second conductive material and forming a loop circuit having a coil portion arranged opposite to the coil portion of the upper layer coil at a predetermined distance; and a substrate supporting the upper layer coil and the lower layer coil and having a dielectric material between the upper layer coil and the lower layer coil. High-frequency currents of opposite phases are passed through the upper layer coil and the lower layer coil, respectively, and a length per loop of the coil portion in the upper layer coil and the coil portion in the lower layer coil is matched to one wavelength of the high-frequency current.

公开(公告)号：US10403745B2

公开(公告)日：2019-09-03

申请号：US15578403

申请日：2016-06-14

申请人： DENSO CORPORATION

发明人： Yasushi Higuchi ,  Shinichi Hoshi ,  Kazuhiro Oyama

IPC分类号： H01L29/778 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20 ,  H01L29/78 ,  H01L29/10

摘要： A nitride semiconductor device includes a horizontal switching device that includes a substrate, a channel forming layer, a source region, a drain region and a gate region. The source region and the drain region are arranged apart from each other in one direction along a plane of the substrate. The gate region is formed of a p-type semiconductor layer and is arranged between the source region and the drain region. The gate region is divided into multiple parts in a perpendicular direction along the plane of the substrate, the perpendicular direction being perpendicular to an arrangement direction in which the source region and the drain region are arranged. Accordingly, on-resistance is decreased while securing high breakdown voltage.

公开(公告)号：US20150115314A1

公开(公告)日：2015-04-30

申请号：US14381238

申请日：2013-03-04

申请人： DENSO CORPORATION

发明人： Kazuki Arakawa ,  Masakiyo Sumitomo ,  Masaki Matsui ,  Yasushi Higuchi ,  Kazuhiro Oyama

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L29/739

CPC分类号： H01L29/42376 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/7397

摘要： In a semiconductor device, a trench includes a first trench that has an opening portion on a surface of a base layer, and a second trench that is communicated with the first trench and in which a distance between opposed side walls is greater than opposed side walls of the first trench and a bottom portion is located in a drift layer. A wall surface of a connecting portion of the second trench connecting to the first trench is rounded. Therefore, an occurrence of a large electrical field concentration in the vicinity of the connecting portion between the first trench and the second trench can be suppressed. Also, when electrons are supplied from a channel region to the drift layer, it is less likely that a flow direction of the electrons will be sharply changed in the vicinity of the connecting portion. Therefore, an on-state resistance can be reduced.

摘要翻译： 在半导体器件中，沟槽包括在基底层的表面上具有开口部分的第一沟槽和与第一沟槽连通并且相对的侧壁之间的距离大于相对侧壁的第二沟槽 的第一沟槽和底部部分位于漂移层中。 连接到第一沟槽的第二沟槽的连接部分的壁表面是圆形的。 因此，可以抑制在第一沟槽和第二沟槽之间的连接部分附近出现大的电场集中。 此外，当从沟道区域向漂移层提供电子时，在连接部附近电子的流动方向不会急剧变化。 因此，可以降低导通电阻。

公开(公告)号：US10714606B2

公开(公告)日：2020-07-14

申请号：US15753342

申请日：2016-09-05

申请人： DENSO CORPORATION

发明人： Youngshin Eum ,  Kazuhiro Oyama ,  Yasushi Higuchi ,  Yoshinori Tsuchiya ,  Shinichi Hoshi

IPC分类号： H01L29/778 ,  H01L29/06 ,  H01L29/812 ,  H01L29/205 ,  H01L29/872 ,  H01L29/40 ,  H01L29/20 ,  H01L29/10 ,  H01L29/423

摘要： A semiconductor device includes a conductive substrate, a channel forming layer, a first electrode, and a second electrode. The channel forming layer is located above the conductive substrate and includes at least one hetero-junction structure. The hetero-junction structure includes a first GaN-type semiconductor layer providing a drift region and a second GaN-type semiconductor layer having a bandgap energy greater than the first GaN-type semiconductor layer. A total fixed charge quantity of charges in the first GaN-type layer and the second GaN-type layer is from 0.5×1013 to 1.5×1013 cm−2. The charges in the first GaN-type layer and the second GaN-type layer include charges generated by the polarization in the first GaN-type layer. Accordingly, the semiconductor device capable of improving a break-down voltage and decreasing an on-resistance is obtained.

公开(公告)号：US10109727B2

公开(公告)日：2018-10-23

申请号：US15531015

申请日：2015-12-08

申请人： DENSO CORPORATION

发明人： Kazuhiro Oyama ,  Yasushi Higuchi ,  Seigo Oosawa ,  Masaki Matsui ,  Youngshin Eum

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/786 ,  H01L29/06 ,  H01L29/51 ,  H01L29/40 ,  H01L29/423 ,  H01L29/20

摘要： A semiconductor device includes a lateral switching device having: a substrate; a channel forming layer that has a heterojunction structure made of a GaN layer and an AlGaN layer and is formed with a recessed portion, on the substrate; a gate structure part that includes a gate insulating film and a gate electrode formed in the recessed portion; and a source electrode and a drain electrode on opposite sides of the gate structure part on the channel forming layer. The AlGaN layer includes a first AlGaN layer that has an Al mixed crystal ratio determining a two dimensional electron gas density, and a second AlGaN layer that has an Al mixed crystal ratio smaller than that of the first AlGaN layer to induce negative fixed charge, and is disposed in contact with the gate structure part and spaced from the source electrode and the drain electrode.

公开(公告)号：US09972992B2

公开(公告)日：2018-05-15

申请号：US14894710

申请日：2014-05-28

申请人： DENSO CORPORATION

发明人： Kazuhiro Oyama

IPC分类号： H02H7/00 ,  H03K17/0812 ,  H01L27/02 ,  H01L29/74 ,  H01L29/778

CPC分类号： H02H7/003 ,  H01L27/0248 ,  H01L29/7408 ,  H01L29/7412 ,  H01L29/778 ,  H03K17/08122

摘要： A protection circuit of a semiconductor device includes a high electron mobility transistor and a protection element. Between the drain and the gate of the high electron mobility transistor, the protection element includes: a thyristor; and a first resistor connected in series to the thyristor. Between the source and the gate of the high electron mobility transistor, the protection element includes: a second resistor and an interrupter that is connected in series to the second resistor. The interrupter interrupts a flow of a current between the drain and the gate when the thyristor is turned off, and the interrupter permits the current to flow between the drain and the gate when the thyristor is turned on.