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公开(公告)号：US12109640B2
公开(公告)日：2024-10-08
申请号：US17418888
申请日：2019-12-26
发明人： Akimasa Yuasa , Takahiro Nakamura , Koji Nishimura
IPC分类号： B23K1/00 , B22F1/05 , C04B37/02 , H01L23/373 , H05K1/03 , H05K1/09 , H05K3/06 , B23K101/42 , B23K103/00 , B23K103/12
CPC分类号： B23K1/0016 , C04B37/023 , H01L23/3735 , H05K1/0306 , H05K1/09 , H05K3/06 , B22F1/05 , B23K2101/42 , B23K2103/12 , B23K2103/52 , C04B2237/125 , C04B2237/368 , C04B2237/407 , C04B2237/52 , H05K2201/0355 , H05K2203/1126
摘要： A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer, in which a specified Expression (1) is satisfied in a cut surface of the copper layer obtained when the ceramic-copper composite is cut at a plane perpendicular to a main surface of the ceramic-copper composite, where S(102)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (102) plane is within 10°, S(101)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (101) plane is within 10°, S(111)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (111) plane is within 10°, and S(112)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (112) plane is within 10°.
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公开(公告)号：US12065385B2
公开(公告)日：2024-08-20
申请号：US17296172
申请日：2019-11-22
CPC分类号： C04B37/026 , B32B7/12 , B32B9/041 , B32B15/20 , B32B18/00 , H05K1/0306 , H05K1/09 , B32B2250/40 , B32B2457/08 , C04B2237/125 , C04B2237/407 , C04B2237/60
摘要： A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer. When a region having a length of 1,700 μm in a long-side direction is a region P on a cut surface of the ceramic-copper composite obtained when the ceramic-copper composite is cut with a plane perpendicular to a main surface of the ceramic-copper composite, an average crystal grain size D1 of copper crystals at least partially present in a region P1 within 50 μm on a side of the copper layer from an interface between the ceramic layer and the brazing material layer in the region P is 30 μm or more and 100 μm or less.
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公开(公告)号：US11452204B2
公开(公告)日：2022-09-20
申请号：US16606405
申请日：2018-04-24
IPC分类号： H05K1/03 , C04B37/02 , H01L23/373
摘要： A ceramic circuit substrate and power module with excellent heat cycle resistance characteristics, which is formed by bonding a ceramic substrate and a copper plate via a brazing material including Ag, Cu, and an active metal, wherein the bond void fraction is no greater than 1.0% and the diffusion distance of the Ag, which is a brazing material component, is 5-20 μm. Also, a method for manufacturing a ceramic circuit substrate characterized in that the heating time in a temperature range 400-700° C. in a process for raising the temperature to a bonding temperature is 5-30 minutes and bonding is performed by maintaining the bonding temperature at 720-800° C. for 5-30 minutes.
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公开(公告)号：US10919811B2
公开(公告)日：2021-02-16
申请号：US15748420
申请日：2015-07-31
发明人： Akimasa Yuasa , Takeshi Miyakawa , Daisuke Goto
IPC分类号： B22F3/26 , C04B35/565 , C04B41/88 , C04B38/00 , B22D19/00 , C04B41/00 , C04B41/51 , B22D19/02 , C04B35/573 , C04B35/63 , H01L23/373 , H01L21/48 , C04B35/645 , B22D19/14 , C22C1/10 , C04B111/00
摘要： Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite. Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 μm or more and 800 μm or less, 20-30 mass % of silicon carbide having a particle diameter of 8 μm or more and less than 80 μm, and 5-10 mass % of silicon carbide having a particle diameter of less than 8 μm.
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公开(公告)号：US11483926B2
公开(公告)日：2022-10-25
申请号：US16630232
申请日：2018-07-25
摘要： A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.
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公开(公告)号：US09872380B2
公开(公告)日：2018-01-16
申请号：US15327159
申请日：2015-07-29
发明人： Ryota Aono , Akimasa Yuasa , Takeshi Miyakawa
IPC分类号： H05K1/03 , H05K3/00 , H05K1/02 , C04B37/02 , C09K5/14 , B23K1/00 , H05K3/46 , B23K35/30 , B23K35/02
CPC分类号： H05K1/0271 , B23K1/0016 , B23K35/0244 , B23K35/3006 , C04B37/02 , C04B37/026 , C04B2237/125 , C04B2237/366 , C04B2237/407 , C04B2237/74 , C09K5/14 , H01L23/3735 , H01L2924/0002 , H05K1/0204 , H05K1/0306 , H05K1/053 , H05K3/022 , H05K3/061 , H05K3/067 , H05K3/4611 , H05K2201/068 , H05K2203/0285 , H01L2924/00
摘要： [Problem] To obtain a ceramic circuit board having superior crack-resistance with respect to ultrasonic bonding.[Solution] The abovementioned problem is solved by a ceramic circuit board characterized in that a metal circuit board is bonded to one surface of a ceramic substrate and a metal heat radiation plate is bonded to the other surface of the ceramic substrate, wherein the crystal grain size in the metal circuit board is at least 20 μm and at most 70 μm. This ceramic circuit board can be manufactured by arranging the metal circuit board on one surface of the ceramic substrate and arranging the metal heat radiation plate on the other surface of the ceramic substrate, and bonding in a vacuum of at most 1×10−3 Pa, at a bonding temperature of at least 780° C. and at most 850° C., for a retention time of at least 10 minutes and at most 60 minutes.
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公开(公告)号：US11277908B2
公开(公告)日：2022-03-15
申请号：US16616837
申请日：2018-05-29
IPC分类号： B21D39/00 , H05K1/03 , B23K1/00 , B32B9/04 , B32B15/04 , B32B15/20 , C04B37/02 , B23K103/00 , B23K101/42
摘要： A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.
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公开(公告)号：US10796925B2
公开(公告)日：2020-10-06
申请号：US16097131
申请日：2017-04-25
发明人： Akimasa Yuasa , Kouji Nishimura
IPC分类号： H05K1/03 , H05K1/02 , H01L23/15 , H01L21/48 , H01L23/373 , H01L23/13 , H01L23/00 , H05K3/28 , H01L23/498 , H05K1/18
摘要： Disclosed herein is a ceramic circuit substrate for a power module obtained by applying an insulating resin for preventing solder flow and chip displacement and an insulating resin for preventing partial discharges and the lowering of insulation to a main surface of a metal circuit and to the outer periphery of the metal circuit or between metal circuits, respectively. Also disclosed herein are methods for manufacturing a ceramic circuit substrate for a power module.
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