Apparatus and method for providing an inerting gas during soldering
    1.
    发明授权
    Apparatus and method for providing an inerting gas during soldering 有权
    在焊接过程中提供惰性气体的装置和方法

    公开(公告)号:US08220699B2

    公开(公告)日:2012-07-17

    申请号:US13040594

    申请日:2011-03-04

    IPC分类号: B23K31/02

    CPC分类号: B23K3/085 B23K3/0653 B23K3/08

    摘要: Described herein is an apparatus and method for providing an inerting gas during the application of soldering to a work piece. In one aspect, there is provided an apparatus that is placed atop of a solder reservoir and comprises a plurality of porous tubes that are in fluid communication with an inerting gas. In another aspect, there is provided a method for providing an inerting gas to a wave soldering apparatus comprising the steps of, among other things, placing an apparatus atop at least one edge of the solder reservoir wherein the apparatus comprises a plurality of tubes comprising one or more openings in fluid communication with an inerting gas source. In a further aspect, at least one of the tubes comprises a non-stick coating or is comprised of a porous non-stick material such as a sleeve.

    摘要翻译: 这里描述了一种用于在对工件进行焊接的过程中提供惰性气体的装置和方法。 在一个方面,提供了一种放置在焊料容器顶部并包括与惰性气体流体连通的多个多孔管的设备。 在另一方面,提供了一种用于向波峰焊装置提供惰性气体的方法,包括以下步骤:将装置放置在焊料储存器的至少一个边缘上方,其中该装置包括多个管,其包括一个 或更多的开口与惰性气体源流体连通。 在另一方面,至少一个管包括不粘涂层或由诸如套筒的多孔不粘材料构成。

    Apparatus And Method For Providing An Inerting Gas During Soldering
    2.
    发明申请
    Apparatus And Method For Providing An Inerting Gas During Soldering 有权
    在焊接过程中提供惰性气体的设备和方法

    公开(公告)号:US20130098974A1

    公开(公告)日:2013-04-25

    申请号:US13449470

    申请日:2012-04-18

    IPC分类号: B23K3/08 B23K1/20 B23K3/06

    摘要: Described herein is an apparatus and method for providing an inerting gas during the application of soldering to a work piece. In one aspect, there is provided an enclosure for providing an inerting gas into an atmosphere above a solder reservoir during soldering of a work piece comprising: a tube in fluid communication with an inerting gas source wherein the tube comprises one or more openings for the flow of the inerting gas therethrough, a base wherein the tube resides in therein and comprises an interior volume, a neck comprising an opening and an interior volume in fluid communication with the interior volume of the base, and a cap proximal to the opening wherein the inerting gas source travels through the tube into the interior volume and into the atmosphere through the opening defined by the neck and cap.

    摘要翻译: 这里描述了一种用于在对工件进行焊接的过程中提供惰性气体的装置和方法。 在一个方面,提供了一种用于在工件焊接期间将惰性气体提供到焊料储存器上方的气氛中的外壳,包括:与惰性气体源流体连通的管,其中管包括用于流动的一个或多个开口 的惰性气体通过其中的基部,其中管位于其中并包括内部容积的基部,颈部包括开口和与基部的内部空间流体连通的内部容积,以及靠近开口的盖,其中惰性 气体源通过颈部和盖子限定的开口穿过管进入内部空间并进入大气。

    Method for providing an inerting gas during soldering
    3.
    发明授权
    Method for providing an inerting gas during soldering 有权
    焊接过程中提供惰性气体的方法

    公开(公告)号:US08579182B2

    公开(公告)日:2013-11-12

    申请号:US13449470

    申请日:2012-04-18

    IPC分类号: B23K35/12 B23K31/02

    摘要: Described herein is an apparatus and method for providing an inerting gas during the application of soldering to a work piece. In one aspect, there is provided an enclosure for providing an inerting gas into an atmosphere above a solder reservoir during soldering of a work piece comprising: a tube in fluid communication with an inerting gas source wherein the tube comprises one or more openings for the flow of the inerting gas therethrough, a base wherein the tube resides in therein and comprises an interior volume, a neck comprising an opening and an interior volume in fluid communication with the interior volume of the base, and a cap proximal to the opening wherein the inerting gas source travels through the tube into the interior volume and into the atmosphere through the opening defined by the neck and cap.

    摘要翻译: 这里描述了一种用于在对工件进行焊接的过程中提供惰性气体的装置和方法。 在一个方面,提供了一种用于在工件焊接期间将惰性气体提供到焊料储存器上方的气氛中的外壳,包括:与惰性气体源流体连通的管,其中管包括用于流动的一个或多个开口 的惰性气体通过其中的基部,其中管位于其中并包括内部容积的基部,颈部包括开口和与基部的内部空间流体连通的内部容积,以及靠近开口的盖,其中惰性 气体源通过颈部和盖子限定的开口穿过管进入内部空间并进入大气。

    Apparatus and Method for Providing an Inerting Gas During Soldering
    4.
    发明申请
    Apparatus and Method for Providing an Inerting Gas During Soldering 有权
    焊接过程中提供惰性气体的设备和方法

    公开(公告)号:US20120055980A1

    公开(公告)日:2012-03-08

    申请号:US13040594

    申请日:2011-03-04

    IPC分类号: B23K1/20 B23K3/06

    CPC分类号: B23K3/085 B23K3/0653 B23K3/08

    摘要: Described herein is an apparatus and method for providing an inerting gas during the application of soldering to a work piece. In one aspect, there is provided an apparatus that is placed atop of a solder reservoir and comprises a plurality of porous tubes that are in fluid communication with an inerting gas. In another aspect, there is provided a method for providing an inerting gas to a wave soldering apparatus comprising the steps of, among other things, placing an apparatus atop at least one edge of the solder reservoir wherein the apparatus comprises a plurality of tubes comprising one or more openings in fluid communication with an inerting gas source. In a further aspect, at least one of the tubes comprises a non-stick coating or is comprised of a porous non-stick material such as a sleeve.

    摘要翻译: 这里描述了一种用于在对工件进行焊接的过程中提供惰性气体的装置和方法。 在一个方面,提供了一种放置在焊料储存器顶部并包括与惰性气体流体连通的多个多孔管的设备。 在另一方面,提供了一种用于向波峰焊装置提供惰性气体的方法,包括以下步骤:将装置放置在焊料储存器的至少一个边缘上方,其中该装置包括多个管,其包括一个 或更多的开口与惰性气体源流体连通。 在另一方面,至少一个管包括不粘涂层或由诸如套筒的多孔不粘材料构成。

    Hadamard enhanced sensors
    5.
    发明授权

    公开(公告)号:US10110834B2

    公开(公告)日:2018-10-23

    申请号:US13290409

    申请日:2011-11-07

    摘要: A method for increasing the pixel count delivered from a plurality of light detectors when scanning an object that includes positioning a mask, having a plurality of two dimensional Walsh-Hadamard filter patterns, in front of a plurality of light detectors to control the passage of light through the mask filter patterns to the light detectors. The method also includes positioning a lens assembly in front of the mask to project an image through the mask filter patterns on to the plurality of light detectors. The method also includes moving the mask, plurality of light detectors, or the image in a plane defined by a planar surface of the plurality of light detectors. The method also includes measuring the filtered image projected through the mask with the plurality of light detectors.

    Film adhesive for semiconductor vacuum processing apparatus
    6.
    发明授权
    Film adhesive for semiconductor vacuum processing apparatus 有权
    半导体真空处理设备的胶粘剂

    公开(公告)号:US08449786B2

    公开(公告)日:2013-05-28

    申请号:US12746810

    申请日:2008-12-18

    IPC分类号: B44C1/22 C23F1/00

    摘要: A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of ≧800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

    摘要翻译: 提供了一种用于减少诸如等离子体处理装置的半导体真空室中的颗粒污染的粘合组件,包括在部件的配合表面和支撑构件之间的弹性片粘合剂粘合以适应热应力。 弹性体片材包含硅氧烷粘合剂,以在室温至300℃的温度范围内承受≥800%的高剪切应变,例如具有任选填料的可热固化的高分子量二甲基硅氧烷。 片材形式具有用于粘结表面平行度的粘结厚度控制。 片状粘合剂可以被切割成预成型形状以符合规则或不规则形状的特征,使与配合部件的表面接触面积最大化,并且可以安装到空腔中。 安装可以手动,手动安装工具或自动化机械。 具有不同物理性质的片状粘合剂的复合层可以层压或共面。

    HADAMARD ENHANCED SENSORS
    7.
    发明申请
    HADAMARD ENHANCED SENSORS 审中-公开
    HADAMARD增强传感器

    公开(公告)号:US20130113921A1

    公开(公告)日:2013-05-09

    申请号:US13290409

    申请日:2011-11-07

    IPC分类号: H04N7/18

    摘要: A method for increasing the pixel count delivered from a plurality of light detectors when scanning an object that includes positioning a mask, having a plurality of two dimensional Walsh-Hadamard filter patterns, in front of a plurality of light detectors to control the passage of light through the mask filter patterns to the light detectors. The method also includes positioning a lens assembly in front of the mask to project an image through the mask filter patterns on to the plurality of light detectors. The method also includes moving the mask, plurality of light detectors, or the image in a plane defined by a planar surface of the plurality of light detectors. The method also includes measuring the filtered image projected through the mask with the plurality of light detectors.

    摘要翻译: 一种在多个光检测器前面扫描包括定位具有多个二维沃尔什 - 哈达玛滤波器图案的掩模的对象以增加从多个光检测器传送的像素数的方法,以控制光的通过 通过掩模过滤器图案到光检测器。 该方法还包括将透镜组件定位在掩模前面,以将图像通过掩模过滤器图案投影到多个光检测器上。 该方法还包括在由多个光检测器的平面表面限定的平面中移动掩模,多个光检测器或图像。 该方法还包括用多个光检测器测量通过掩模投影的滤波图像。

    Process for forming a semiconductor device
    10.
    发明授权
    Process for forming a semiconductor device 失效
    用于形成半导体器件的工艺

    公开(公告)号:US5972804A

    公开(公告)日:1999-10-26

    申请号:US963436

    申请日:1997-11-03

    摘要: A method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate (200). This semiconductor substrate is cleaned via process steps (10-28). Optional nitridation and oxidation are performed via steps (50 and 60) to form a thin interface layer (202). Bulk oxynitride gate deposition occurs via a step (70) to form a bulk gate dielectric material (204) having custom tailored oxygen and nitrogen profile and concentration. A step (10) is then utilized to in situ cap this bulk dielectric layer (204) with a polysilicon or amorphous silicon layer (208). The layer (208) ensures that the custom tailors oxygen and nitrogen profile and concentration of the underlying gate dielectric (204) is preserved even in the presence of subsequent wafer exposure to oxygen ambients.

    摘要翻译: 形成氧氮化物栅极电介质层(202,204)的方法由提供半导体衬底(200)开始。 通过工艺步骤(10-28)清洁该半导体衬底。 通过步骤(50和60)进行可选的氮化和氧化以形成薄界面层(202)。 大量氮氧化物栅极沉积通过步骤(70)发生,以形成具有定制的氧和氮分布和浓度的体栅电介质材料(204)。 然后使用步骤(10)以多晶硅或非晶硅层(208)原位覆盖该体电介质层(204)。 即使在随后的晶片暴露于氧气氛的情况下,层(208)确保定制定制氧气和氮气分布和下层栅极电介质(204)的浓度。