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    Mirror and related EUV systems and methods
    5.
    发明授权
    Mirror and related EUV systems and methods 有权

    公开(公告)号：US10274649B2

    公开(公告)日：2019-04-30

    申请号：US13789773

    申请日：2013-03-08

    申请人： Carl Zeiss SMT GmbH

    发明人： Johannes Ruoff ,  Heiko Feldmann

    IPC分类号： G02B5/08 ,  G03F7/20

    摘要： A mirror for EUV radiation includes a mirror body, which has at least one EUV radiation-reflecting region and at least two EUV radiation-permeable regions. A spatial separation of the illumination and imaging beam paths is possible with small angles of incidence and a large object-side numerical aperture.

    Projection exposure apparatus for EUV microlithography and method for microlithographic exposure
    7.
    发明授权
    Projection exposure apparatus for EUV microlithography and method for microlithographic exposure 有权
    用于EUV微光刻的投影曝光装置和微光刻曝光方法

    公开(公告)号：US09298097B2

    公开(公告)日：2016-03-29

    申请号：US13782390

    申请日：2013-03-01

    申请人： Carl Zeiss SMT GmbH

    发明人： Marc Bienert ,  Heiko Feldmann ,  Aksel Goehnermeier ,  Oliver Natt ,  Johannes Ruoff

    IPC分类号： G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70091 ,  G03F7/701 ,  G03F7/70425

    摘要： The disclosure relates to a projection exposure apparatus for EUV microlithography which includes an illumination system for illuminating a pattern, and a projection objective for imaging the pattern onto a light-sensitive substrate. The projection objective has a pupil plane with an obscuration. The illumination system generates light with an angular distribution having an illumination pole which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole toward large polar angles a dark zone is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane.

    摘要翻译： 本发明涉及一种用于EUV微光刻的投影曝光装置，其包括用于照亮图案的照明系统和用于将图案成像到感光基板上的投影物镜。 投影物镜具有晦暗的瞳孔平面。 照明系统产生具有角度分布的光，其具有在极角范围和方位角范围内延伸的照明极，并且光强度大于照明极点最小值。 从照明极到大的极角，不包括光强度小于照明极最小值的暗区，并且在区域中具有对应于瞳孔平面遮蔽形式的形式。

    IMAGING CATOPTRIC EUV PROJECTION OPTICAL UNIT
    9.
    发明申请
    IMAGING CATOPTRIC EUV PROJECTION OPTICAL UNIT 有权
    成像光电EUV投影光学单元

    公开(公告)号：US20140176928A1

    公开(公告)日：2014-06-26

    申请号：US14179692

    申请日：2014-02-13

    申请人： Carl Zeiss SMT GmbH

    发明人： Johannes Ruoff ,  Thomas Schicketanz

    IPC分类号： G03F7/20 ,  G02B17/06

    CPC分类号： G03F7/70233 ,  G02B17/06 ,  G02B17/0663 ,  G03F7/7015 ,  G03F7/70566

    摘要： An imaging catoptric optical unit has at least four mirror, which image an object field in an object plane into an image field in an image plane. A first chief ray plane of the optical unit is prescribed by propagation of a chief ray of a central object field point during the reflection at one of the mirrors. A second chief ray plane of the optical unit is prescribed by propagation of the chief ray of the central object field point during the reflection at one of the other mirrors. The two chief ray planes include an angle that differs from 0. In an alternative or additional aspect, the imaging optical unit, considered via the image field, has a maximum diattenuation of 10% or a diattenuation that prefers a tangential polarization of the imaging light for a respectively considered illumination angle. The result of both aspects is an imaging optical unit in which bothersome polarization influences are reduced during the reflection of imaging light at the mirrors of the imaging optical unit.

    摘要翻译： 成像反射光学单元具有至少四个镜像，其将物平面中的物场映像成图像平面中的图像场。 光学单元的第一主射线平面由反射镜中的一个反射期间的中心物体场点的主射线的传播来规定。 光学单元的第二主光线平面是通过在其它反射镜之一的反射期间中心物场点的主射线的传播来规定的。 两个主射线平面包括与0不同的角度。在替代或另外的方面，通过图像场考虑的成像光学单元具有10％的最大衰减量或偏好成像光的切向偏振的衰减 分别考虑照明角度。 两个方面的结果是成像光学单元，其中在成像光学单元的反射镜的成像光的反射期间，麻烦的偏振影响减小。

    OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, AND MICROLITHOGRAPHIC EXPOSURE
    10.
    发明申请
    OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, AND MICROLITHOGRAPHIC EXPOSURE 有权
    微观投影曝光装置的光学系统和微观曝光

    公开(公告)号：US20140132942A1

    公开(公告)日：2014-05-15

    申请号：US14143878

    申请日：2013-12-30

    申请人： Carl Zeiss SMT GmbH

    发明人： Ingo Saenger ,  Joerg Zimmermann ,  Johannes Ruoff ,  Martin Meier ,  Frank Schlesener ,  Christoph Hennerkes

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70191 ,  G02B27/283 ,  G03F7/70108 ,  G03F7/70116 ,  G03F7/70566

    摘要： The disclosure relates to optical systems of a microlithographic projection exposure apparatus, and to a microlithographic exposure method. According to an aspect of the disclosure, an optical system has a light source, a ray-splitting optical element, which splits a light ray incident on this element when the projection exposure apparatus is in operation into a first partial ray and a second partial ray, with the first and the second partial ray having mutually orthogonal polarization directions, and at least one ray-deflecting optical element for generating a desired polarized illumination setting from the first partial ray and the second partial ray, wherein the ray-splitting optical element is arranged such that light incident on this ray-splitting optical element when the projection exposure apparatus is in operation has a degree of polarization of less than one.

    摘要翻译： 本公开涉及微光刻投影曝光装置的光学系统以及微光刻曝光方法。 根据本公开的一个方面，一种光学系统具有光源，分光光学元件，其在投影曝光装置工作时分裂入射在该元件上的光线到第一部分光线和第二部分光线 其中第一和第二部分光线具有相互正交的偏振方向，以及至少一个光线偏转光学元件，用于从第一部分光线和第二部分光线产生期望的偏振照明设置，其中光线分离光学元件是 被布置成使得当投影曝光装置运行时入射在该分光光学元件上的光具有小于1的偏振度。