公开(公告)号：US09803109B2

公开(公告)日：2017-10-31

申请号：US14612736

申请日：2015-02-03

申请人： Cabot Microelectronics Corporation

发明人： Hung-Tsung Huang ,  Ming-Chih Yeh ,  Chih-Pin Tsai

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00 ,  C09K13/00 ,  C09K13/04 ,  C09G1/04 ,  C09G1/00 ,  H01L21/321 ,  H01L21/306 ,  C09G1/02 ,  H01L21/304 ,  H01L21/3105 ,  C09D1/02 ,  C09K3/14

CPC分类号： C09G1/04 ,  C09D1/02 ,  C09G1/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

摘要： The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

公开(公告)号：US20160053381A1

公开(公告)日：2016-02-25

申请号：US14308587

申请日：2014-08-22

申请人： Cabot Microelectronics Corporation

发明人： Chih-Pin TSAI ,  Ming-Chih Yeh ,  Glenn Whitener ,  Lung-Tai Lu

IPC分类号： C23F1/16 ,  C23F3/00

CPC分类号： C23F3/06 ,  C09G1/02

摘要： A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.

摘要翻译： 描述了平面化/抛光锗的方法。 该方法包括用包含氧化剂，颗粒磨料和锗蚀刻抑制剂的水性化学机械抛光（CMP）组合物研磨包含锗的衬底的表面的步骤。 锗蚀刻抑制剂选自水溶性聚合物，具有非酸性侧链的氨基酸，双吡啶化合物及其两种或更多种的组合。 聚合物可以是包含碱性氮基团，酰胺基团或其组合的阳离子或非离子聚合物。

公开(公告)号：US09752057B2

公开(公告)日：2017-09-05

申请号：US14616250

申请日：2015-02-06

申请人： Cabot Microelectronics Corporation

发明人： Hui-Fang Hou ,  William Ward ,  Ming-Chih Yeh ,  Chih-Pin Tsai

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C09G1/02 ,  H01L21/321 ,  C23F3/06 ,  H01L21/3105 ,  C09K3/14

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212

摘要： A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.

公开(公告)号：US20150221521A1

公开(公告)日：2015-08-06

申请号：US14616250

申请日：2015-02-06

申请人： Cabot Microelectronics Corporation

发明人： Hui-Fang HOU ,  William Ward ,  Ming-Chih Yeh ,  Chih-Pin Tsai

IPC分类号： H01L21/3105 ,  C09G1/02 ,  C23F1/26 ,  H01L21/311 ,  H01L21/321

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212

摘要： A chemical mechanical polishing (CMP) method for removal of a metal layer deposited over a titanium nitride (TiN) or titanium/titanium nitride (Ti/TiN) barrier layer is described herein. The method comprises abrading the metal layer with an acidic CMP composition to expose the underlying TiN or Ti/TiN layer, wherein the TiN or Ti/N layer is polished at a low rate due to the presence of a surfactant inhibitor. The acidic CMP composition comprises a particulate abrasive (e.g., silica, alumina) suspended in a liquid carrier containing a surfactant selected from the group consisting of an anionic surfactant, a nonionic surfactant, cation surfactants, and a combination thereof.

摘要翻译： 本文描述了用于去除沉积在氮化钛（TiN）或钛/氮化钛（Ti / TiN）阻挡层上的金属层的化学机械抛光（CMP）方法。 该方法包括用酸性CMP组合物研磨金属层以暴露下面的TiN或Ti / TiN层，其中由于表面活性剂抑制剂的存在，TiN或Ti / N层以低速率抛光。 酸性CMP组合物包含悬浮在含有选自阴离子表面活性剂，非离子表面活性剂，阳离子表面活性剂及其组合的表面活性剂的液体载体中的颗粒磨料（例如二氧化硅，氧化铝）。