-
公开(公告)号：US20160053381A1
公开(公告)日：2016-02-25
申请号：US14308587
申请日：2014-08-22
发明人： Chih-Pin TSAI , Ming-Chih Yeh , Glenn Whitener , Lung-Tai Lu
摘要： A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.
摘要翻译： 描述了平面化/抛光锗的方法。 该方法包括用包含氧化剂，颗粒磨料和锗蚀刻抑制剂的水性化学机械抛光（CMP）组合物研磨包含锗的衬底的表面的步骤。 锗蚀刻抑制剂选自水溶性聚合物，具有非酸性侧链的氨基酸，双吡啶化合物及其两种或更多种的组合。 聚合物可以是包含碱性氮基团，酰胺基团或其组合的阳离子或非离子聚合物。
-
公开(公告)号：US09238754B2
公开(公告)日：2016-01-19
申请号：US14203621
申请日：2014-03-11
发明人： Steven Grumbine , Jeffrey Dysard , Lin Fu , William Ward , Glenn Whitener
IPC分类号： C09G1/02 , H01L21/306 , H01L21/321
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1436 , C09K3/1463 , C23F1/40 , H01L21/3212
摘要： A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
摘要翻译： 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。
-
公开(公告)号：US09566686B2
公开(公告)日：2017-02-14
申请号：US14965168
申请日：2015-12-10
发明人： Steven Grumbine , Jeffrey Dysard , Lin Fu , William Ward , Glenn Whitener
IPC分类号： B24B37/04 , C23F1/40 , H01L21/321 , C09G1/02
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1436 , C09K3/1463 , C23F1/40 , H01L21/3212
摘要： A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
摘要翻译： 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。
-
公开(公告)号：US09303188B2
公开(公告)日：2016-04-05
申请号：US14203647
申请日：2014-03-11
发明人： Steven Grumbine , Jeffrey Dysard , Lin Fu , William Ward , Glenn Whitener
IPC分类号： C09K13/00 , C09G1/02 , H01L21/306 , H01L21/321
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/30625 , H01L21/3212
摘要： A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
摘要翻译： 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有至少6mV的永久正电荷的胶态二氧化硅磨料和在该溶液中的聚阳离子胺化合物 液体载体。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。
-
5.发明授权CMP compositions selective for oxide and nitride with high removal rate and low defectivity 有权对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物公开(公告)号：US09238753B2
公开(公告)日：2016-01-19
申请号：US13799920
申请日：2013-03-13
发明人： Brian Reiss , Glenn Whitener
IPC分类号： H01L21/302 , C09G1/02 , H01L21/306 , H01L21/3105 , H01L21/321
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供了一种化学机械抛光组合物，其含有二氧化铈研磨剂，一种或多种非离子聚合物，任选的一种或多种膦酸，任选的一种或多种含氮两性离子化合物，任选的一种或多种磺酸共聚物，任选的一种或多种阴离子 共聚物，任选的一种或多种包含季胺的聚合物，任选的一种或多种调节抛光组合物的pH的化合物，水和任选的一种或多种添加剂。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
-
公开(公告)号：US10294399B2
公开(公告)日：2019-05-21
申请号：US15398933
申请日：2017-01-05
发明人： Roman Ivanov , Fernando Hung Low , Cheng-Yuan Ko , Glenn Whitener
IPC分类号： H01L21/321 , C09G1/02 , C09K3/14 , H01L21/306 , H01L21/3105
摘要： The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.
-
公开(公告)号：US10066126B2
公开(公告)日：2018-09-04
申请号：US14988891
申请日：2016-01-06
发明人： Kevin P. Dockery , Helin Huang , Matthew Carnes , Glenn Whitener
IPC分类号： C09K13/00 , C09G1/02 , C09K13/06 , C09G1/04 , H01L21/321
摘要： Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.
-
公开(公告)号：US20170190936A1
公开(公告)日：2017-07-06
申请号：US14988891
申请日：2016-01-06
发明人： Kevin P. Dockery , Helin Huang , Matthew Carnes , Glenn Whitener
IPC分类号： C09G1/02 , H01L21/321
CPC分类号： C09G1/02 , C09G1/04 , C09K13/00 , C09K13/06 , H01L21/31053 , H01L21/3212
摘要： Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.
-
公开(公告)号：US10418248B2
公开(公告)日：2019-09-17
申请号：US15433068
申请日：2017-02-15
发明人： Benjamin Petro , Glenn Whitener , William Ward
IPC分类号： H01L21/306 , C09G1/02 , C09K3/14 , H01L29/20 , H01L21/02
摘要： Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. % to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.
-
10.发明申请CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY 有权选择具有高去除率和低缺陷度的氧化物和硝酸盐的CMP组合物公开(公告)号：US20130244433A1
公开(公告)日：2013-09-19
申请号：US13799920
申请日：2013-03-13
发明人： Brian Reiss , Glenn Whitener
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供了一种化学机械抛光组合物，其含有二氧化铈研磨剂，一种或多种非离子聚合物，任选的一种或多种膦酸，任选的一种或多种含氮两性离子化合物，任选的一种或多种磺酸共聚物，任选的一种或多种阴离子 共聚物，任选的一种或多种包含季胺的聚合物，任选的一种或多种调节抛光组合物的pH的化合物，水和任选的一种或多种添加剂。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.016 秒)
