发明授权
US09238753B2 CMP compositions selective for oxide and nitride with high removal rate and low defectivity
有权
对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物
- 专利标题： CMP compositions selective for oxide and nitride with high removal rate and low defectivity
- 专利标题（中）： 对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物
-
申请号： US13799920申请日： 2013-03-13
-
公开(公告)号： US09238753B2公开(公告)日： 2016-01-19
- 发明人: Brian Reiss , Glenn Whitener
- 申请人： Cabot Microelectronics Corporation
- 申请人地址： US IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： US IL Aurora
- 代理商 Thomas E. Omholt; Derek W. Barnett; Arlene Homilla
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; C09G1/02 ; H01L21/306 ; H01L21/3105 ; H01L21/321
摘要：
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
公开/授权文献
信息查询
IPC分类:
