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公开(公告)号：US12132022B2
公开(公告)日：2024-10-29
申请号：US17430856
申请日：2021-03-08
发明人： Zengyan Fan
CPC分类号： H01L24/14 , H01L23/3171 , H01L24/11 , H01L24/13 , H01L2224/11019 , H01L2224/11462 , H01L2224/11622 , H01L2224/13007 , H01L2224/13018 , H01L2224/13147 , H01L2224/1403 , H01L2224/14051 , H01L2224/14517 , H01L2924/35121
摘要： The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device comprises: a semiconductor substrate; a passivation layer, arranged on an upper surface of the semiconductor substrate; a protective layer, arranged on an upper surface of the passivation layer, a dummy opening being formed on the protective layer; and, a dummy bump, partially located in the dummy opening and closely attached to the protective layer.
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公开(公告)号：US11978698B2
公开(公告)日：2024-05-07
申请号：US17647167
申请日：2022-01-05
发明人： Zengyan Fan
IPC分类号： H05K3/06 , H01L21/48 , H01L23/498
CPC分类号： H01L23/49822 , H01L21/4857 , H05K3/06
摘要： A method for forming the packaging structure includes: providing a substrate; forming a plurality of mutually independent conductive wires on the substrate, wherein a trench is provided between adjacent conductive wires; oxidizing side walls of each of the conductive wires to form a barrier layer; and forming a solder mask at least filling the trench.
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公开(公告)号：US20230054495A1
公开(公告)日：2023-02-23
申请号：US17430856
申请日：2021-03-08
发明人： Zengyan Fan
摘要： The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device comprises: a semiconductor substrate; a passivation layer, arranged on an upper surface of the semiconductor substrate; a protective layer, arranged on an upper surface of the passivation layer, a dummy opening being formed on the protective layer; and, a dummy bump, partially located in the dummy opening and closely attached to the protective layer.
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